MJ 1524 Search Results

Contextual Info: International IG R Rectifier PD - 9.1455A IRG4BC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter

Contextual Info: PD - 9 .1 4 5 6 D International I R Rectifier IRG4BC40U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • U ltraFast: O p tim ize d for high o perating VcES = 600V fre q u e n c ie s 8 -4 0 k H z in hard sw itching, > 2 0 0

Chilisin Electronics

Abstract: CHILISIN in 4436 9333 731
Contextual Info: T Cores T Cores Application z z z z z z 2 Shapes Mn-Zn Cores Current transformer. EMI-suppression in power lines. EMI-suppression in mains filters. Inductive delay lines. Power inductors. Power transformers. Wideband transformers. T 4 x 2 x T OD x ID x ID

Q405

Abstract: vqe 24 d q405 transistor vqe 23 IRGBC26 TO220AB IGBT t303 3i03 a y8e
Contextual Info: INTERNATIONAL RECTIFIER EbE D 4055455 00105=11 7 • Data Sheet No. PD-9.669 T-3Ì-03 International Usi Rectifier INSULATED GATE BIPOLAR TRANSISTOR IRGBCS6 600V, 19A FEATURES 600V, 19A, TO-220AB IGBT International Rectifier’s IR G series o f Insulated Gate

Contextual Info: IRFB7430PBF Applications l l l l l l l l l TO-220AB Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches

Contextual Info: PD - 97782A StrongIRFET™ IRFB7430PbF Applications l l l l l l l l l HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies

Contextual Info: PD - 97777 StrongIRFET™ IRFP7430PbF Applications l l l l l l l l l HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP8N50E, PHB8N50E, PHW8N50E Avalanche energy rated_ SYMBOL FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics

IRFB7430

Abstract: IRFB7430PBF
Contextual Info: PD - 97782A StrongIRFET™ IRFB7430PbF Applications l l l l l l l l l HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies

IRFP7430

Abstract: IRFP7430PBF BLDC motor drive irfp7
Contextual Info: PD - 97777 StrongIRFET™ IRFP7430PbF Applications l l l l l l l l l HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies

Contextual Info: AUIRFB8409 AUIRFS8409 AUIRFSL8409 AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology New Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

Contextual Info: StrongIRFETTM IRFB7430PbF Applications l l l l l l l l l HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies

QS5U23

Contextual Info: SPICE PARAMETER QS5U23 by ROHM TR Div. * QS5U23 PMOSFET model * Date: 2006/09/08 * This model includes a diode between drain and source. *D G S .SUBCKT QS5U23 1 2 3 M1 1 2 3 3 MOS_P D1 1 3 DREV .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6 + W=1

QS5U21

Contextual Info: SPICE PARAMETER QS5U21 by ROHM TR Div. * QS5U21 PMOSFET model * Date: 2006/09/08 * This model includes a diode between drain and source. *D G S .SUBCKT QS5U21 1 2 3 M1 1 2 3 3 MOS_P D1 1 3 DREV .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6 + W=1

388 transistor

Abstract: 1124 transistor schottky model spice QS5U26
Contextual Info: SPICE PARAMETER QS5U26 by ROHM TR Div. * QS5U26 PMOSFET model * Date: 2006/09/08 * This model includes a diode between drain and source. *D G S .SUBCKT QS5U26 1 2 3 M1 1 2 3 3 MOS_P D1 1 3 DREV .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6 + W=1

Contextual Info: StrongIRFETTM IRFP7430PbF Applications l l l l l l l l l HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies

Contextual Info: StrongIRFET™ IRFS7430PbF IRFSL7430PbF HEXFET Power MOSFET Applications l Brushed motor drive applications l BLDC motor drive applications l Battery powered circuits l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies

Contextual Info: StrongIRFET™ IRFS7430PbF IRFSL7430PbF HEXFET Power MOSFET Applications l Brushed motor drive applications l BLDC motor drive applications l Battery powered circuits l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies

HRM2H-SDC24V

Abstract: relay hrm2h dc24v dc9v HRM2H-S-DC48V HRM2H-S-DC24V hrm2-s-dc24v HRM2H-S-DC5V relay DC9V DC24V DC48V
Contextual Info: HRM2 H Relay - kinds of single relays , power relays , automotive relays , telecom rel. Page 1 of 4 HRM2(H) Relay 1.COIL DATA 3 VDC to 48 VDC Refer to Table 1 Refer to Table 1 Refer to Table 1 1-1 .Nominal Voltage 1-2.Coil Resistance 1-3.Operate Voltage

Contextual Info: Miniature 1.0" x 2.0" x 0.40” Wide Input Voltage Range (9-I8Vdc, 18-36Vdc, 36-72Vdc) LWA15 SERIES Regulated DC/DC Converters 15 Watt FEATURES: •U L and CE approved ^ ^ ' nP r Ri:nSeT u / • - 4 0 ° C to +71°C Operating 1 emp. Range •L ow Profile Package (1.00” \ 2.00” x 0.375”)

Contextual Info: Coaxial Transmission Line Technical Data Figure 1 - Variation of Attenuation with Ambient Temperature Figure 2 - Effect of Load VSW R on Transmission Loss V S W R at T erm in ation Attenuation Effect of Connector on Transmission Line Loss The attenuation versus frequency characteristics of

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

sprague 53D

Abstract: ge 4110 53D101F 53D101
Contextual Info: Type 53D Vishay Sprague Aluminum Capacitors + 85°C, Tubular, Axial Lead, General Purpose FEATURES • General purpose capacitor • Rugged construction • Largest CV ratings in axial leaded capacitor Life Validation Test: 1000 hours at + 85°C: ∆ CAP ≤ 15%

Contextual Info: Type 53D VISHAY Vishay Sprague ▼ Aluminum Capacitors + 85 C, Tubular, Axial Lead, G eneral Purpose FEATURES • General purpose capacitor • Rugged construction • Largest CV ratings in axial leaded capacitor PERFORMANCE C HARACTERISTICS Life Validation Test: 1000 hours at + 85°C: A CAP < 15%