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    MJ16012 Search Results

    MJ16012 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MJ16012 On Semiconductor 15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS Original PDF
    MJ16012 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package Original PDF
    MJ16012 General Electric 5 A SwitchMax II power transistor. High voltage N-P-N type. Scan PDF
    MJ16012 General Semiconductor Low Frequency Silicon Power NPN Transistor Scan PDF
    MJ16012 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJ16012 Motorola Switchmode Datasheet Scan PDF
    MJ16012 Motorola European Master Selection Guide 1986 Scan PDF
    MJ16012 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MJ16012 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MJ16012 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MJ16012 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MJ16012 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MJ16012 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Bipolar Power, NPN, 15A, 450V, Pkg Style TO204 Scan PDF
    MJ16012 Semelab Bi-polar Transistors (CECC and High Rel) & High Energy Scan PDF
    MJ16012 Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors Scan PDF
    MJ-16012 Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors Scan PDF

    MJ16012 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJ16012

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification MJ16012 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS ・Switching Regulators ・Inverters ・Solenoids ・Relay Drivers ・Motor Controls ・Deflection Circuits


    Original     		PDF MJ16012 MJ16012

    MJ16012

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification MJ16012 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ,high speed APPLICATIONS ·Switching Regulators ·Inverters ·Solenoids ·Relay Drivers ·Motor Controls ·Deflection Circuits


    Original     		PDF MJ16012 20lector MJ16012

    Untitled

    Abstract: No abstract text available
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MJ16010 Designer's Data Sheet MJW16010 SWITCHMODE Series NPN Silicon Power Transistors MJ16012* These transistors are designed for high-voltage, high-speed, power switching in


    Original     		PDF MJ16010 MJW16010 MJ16012* MJ16012 MJW16012 MJ16010 MJW16010

    MJ16010

    Abstract: MJ16012 p6302 IC 7403 2N6191 MJW16010 MJW16012 AM503 mj16
    Text: ON Semiconductort MJ16010 SWITCHMODEt Series NPN Silicon Power Transistors MJW16010 MJ16012 * These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The


    Original     		PDF MJ16010 MJW16010 MJ16012 MJ16012 MJW16012 MJ16010 MJW16010 r14525 MJ16010/D p6302 IC 7403 2N6191 AM503 mj16

    MJ16012

    Abstract: No abstract text available
    Text: MJ16012 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF MJ16012 O204AA) 31-Jul-02 MJ16012

    MJ16012

    Abstract: mj16
    Text: MJ16012 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF MJ16012 O204AA) 16-Jul-02 MJ16012 mj16

    MJ16012

    Abstract: No abstract text available
    Text: MJ16012 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF MJ16012 O204AA) 18-Jun-02 MJ16012

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    MJ16012

    Abstract: MJH16010 MJ16010 MJH16012 MJI6012
    Text: Power Transistors. MJ16010, MJ16012, MJH16010, MJH16012 HARRIS SEMICOND SECTOR 27E D File Number M3GS271 0 0 2 0 4 5 G • 1839 4 «HAS -T V 3 3 - 15 “T - - 3 3 - I 3 5-A SwitchMaXW Power Transistors H ig h -V o lta g e N -P -N Types for O ff-L in e P ow er Supplies


    OCR Scan     		PDF MJ16010, MJ16012, MJH16010, MJH16012 M3GS271 Q02GM5D T-53-13 MJI6010 MJI6012 O-218AC MJ16012 MJH16010 MJ16010 MJH16012 MJI6012

    MJ16012

    Abstract: MJ16010
    Text: MJ16010, MJ16012 File Num ber 1839.1 5-A SwitchM aiC II Power Transistors High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications A p p lic a tio n s : F ea tu re s : O f f - lin e p o w e r s u p p lie s I H ig h - v o lt a g e in v e r te r s


    OCR Scan     		PDF MJ16010, MJ16012 MJI6012 -204A MJ16010 MJ16012 volta464

    MJH16010

    Abstract: MJ16012 MJ16010 MJI6010 MJH16012
    Text: Ql 3875081 G E SOLID DE I 3 f l ? 5 0 f l l STATE 3 DD1707Q 0 1E 1 70 70 D Sw KckM a* Pow er MJ16010, MJ16012 MJH16010,MJH16012 U I File N u m b e r I p 1839 5-A SwitchMaXW Power Transistors High-Voltage N -P -N Types for O ff-Line Power Supplies


    OCR Scan     		PDF DD17D70 MJ16010, MJ16012 MJH16010 MJH16012 O-204AA MJI6010 J16012 MJ16012, MJ16010 MJH16012

    h1601

    Abstract: No abstract text available
    Text: H A RR IS S E M I C O N D S E CT OR 5bE » • 4302271 GGMGÖÖM lbb « H A S MJ16010, MJ16012 File Number 1 8 3 9 .1 7=125-/? 5-A Sw itchM a* II Power Transistors High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications


    OCR Scan     		PDF MJ16010, MJ16012 MJ16010 MJI6012 MJ16010 MJ16012 H1601 U1J160T0, h1601

    STI-430

    Abstract: DTS-411 DTS-804 Transistor DTS801 DTS-430 DTS-423 transistor MJ 15024 STI801 DTS-723 transistor st 431
    Text: SEMICONDUCTOR TECHNOLOGY OSE D J fll3bM5fl D G 0 0 2 S b NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS STI Type ST-13071 ST-13080 ST-13081 ST-13090 ST-13091 Industry Type MJ-13071 MJ-13080 MJ-13081 MJ-13090 MJ-13091 Power Dissipation @25 °C watts


    OCR Scan     		PDF DG0022L, ST-13071 ST-13080 ST-13081 ST-13090 ST-13091 MJ-13071 MJ-13080 MJ-13081 MJ-13090 STI-430 DTS-411 DTS-804 Transistor DTS801 DTS-430 DTS-423 transistor MJ 15024 STI801 DTS-723 transistor st 431

    transistor buv18a

    Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
    Text: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min


    OCR Scan     		PDF MPSU10 MPSU02 MPSU03 MPSU04 MPSU01 MPSU01A MPSU45# MPSU60 MPSU52 MPSU51 transistor buv18a motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"

    MJ16010

    Abstract: bi 370 transistor MJ16012 ssf transistor MJ16012 MOTOROLA RSS2 IC 7403 2N6191 AM503 MJW16010
    Text: MOTOROLA Order this document by MJ16010/D SEMICONDUCTOR TECHNICAL DATA M J16010 M JW 16010 D esigner’s Data Sheet SW ITCHM ODE S eries NPN S ilicon Pow er Transistors M J16012* These transistors are designed for high-voltage, high-speed, power switching in


    OCR Scan     		PDF MJ16010/D MJ16012 MJW16012 MJ16010 MJW16010 340F-03 O-247AE bi 370 transistor ssf transistor MJ16012 MOTOROLA RSS2 IC 7403 2N6191 AM503

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    AN952

    Abstract: MJ16016 MJ16004 MJ16008 MJ16018 MJH16008 MR826 MUR8100 AN952 MOTOROLA Ultra-Fast Recovery Rectifiers
    Text: I M O T O R O L A I N C AN952 . Application Note < ULTRAFAST RECOVERY RECTIFIERS EXTEND POWER TRANSISTOR SOA Prepared by: W arren Schultz M otorola Power Products Division Traditionally, bipolar power tran sisto rs have been lim ited to collector-em itter breakdow n V (B R C E O ( sus >>


    OCR Scan     		PDF AN952 1ATX1871S-2 AN952/D AN952 MJ16016 MJ16004 MJ16008 MJ16018 MJH16008 MR826 MUR8100 AN952 MOTOROLA Ultra-Fast Recovery Rectifiers

    mj16010

    Abstract: MJ16012 MJ16012 MOTOROLA MJ16012 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J16010 M JW 16010 Designer’s Data Sheet SWITCHMODE Series NPN Silicon Power Transistors M J16012* These transistors are designed for high-voltage, high-speed, power switching in In d u c tiv e c irc u its w h e re fa ll tim e is c ritic a l. T h e y a re p a rtic u la rly s u ite d fo r


    OCR Scan     		PDF J16010 J16012* MJ16012 MJ16010 J16012 MJW16012 AM503 P6302 MJ16012 MOTOROLA MJ16012 equivalent

    p6302

    Abstract: MJH16010
    Text: MOTOROLA SC X STR S/R 1SE D I F b 3 b ?2 5 4 0 0 0 5 2 0 3 t. | -7 = 3 3 -/^ T ~ & ii MJ16010 MJH16010 Ml 16012 MJH16012 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s D a ta S h e e t 15 A M P E R E SW ITCH M O D E III S E R IE S NPN SILIC O N POW ER T R A N S IS TO R S


    OCR Scan     		PDF MJ16010 MJH16010 MJH16012 MJ16012 JH16012 J16010 Defl10, MJ16012, MJH16010, p6302