MJD31C Search Results

NJVMJD31CT4G

Abstract: NJVMJD31T4G
Contextual Info: MJD31, NJVMJD31T4G, MJD31C, MJD31CT4G NPN , MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. http://onsemi.com

J32C

Abstract: J31C J31C TO-252 smd j31c J31C ON J31C smd j32-C smd j32c MJD32 J31C MARKING
Contextual Info: Transistors SMD Type Complementary Power Transistors MJD31,MJD31C NPN MJD32,MJD32C(PNP) TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Lead Formed for Surface Mount Applications in Plastic Sleeves Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1

MJD31C

Abstract: MJD32C MJD32CT4-A
Contextual Info: MJD32CT4-A Low voltage PNP power transistor Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the NPN type MJD31C 3 1 Application ■ DPAK TO-252 General purpose linear and switching

3543

Contextual Info: MJD31C Low voltage NPN power transistor Datasheet − production data Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the PNP type MJD32C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252

MJDI22

Contextual Info: DPAK DEVICES continued Bipolar Power Transistors Device NPN PNP MJD340 MJD47 MJD350 MJD31 MJD31C MJD148 MJD6O39 W MJD243 MJD200 MJD41C MJD44H11 MJDI22 W MJD30S5 MJD44E3 (1) VCEO(sus) Volts Min Min/Max Am ps 0.5 300 250 350 400 400 100 40 100 45 80 100 25

Contextual Info: MJD31, NJVMJD31T4G, MJD31C, MJD31CT4G NPN , MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) http://onsemi.com Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching

Contextual Info: MJD31C Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)15 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)50u° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: MJD31C 100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 Features Mechanical Data •          BVCEO > 100V IC = 3A high Continuous Collector Current ICM = 5A Peak Pulse Current Ideal for Power Switching or Amplification Applications Complementary PNP Type: MJD32C

MJD32C

Abstract: Date Code Marking STMicroelectronics PACKAGE DPAK MJD31C MJD32CT4 MJD32C st
Contextual Info: MJD32C Low voltage PNP power transistor Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the NPN type MJD31C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252 Description The device is manufactured in planar technology

1N5825

Abstract: 369D MJD31 MJD31C MJD32 MJD32C TIP31 TIP32
Contextual Info: MJD31, MJD31C NPN , MJD32, MJD32C (PNP) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS

JESD97

Abstract: MJD31CT4-A MJD32C MJD32CT4-A
Contextual Info: MJD32CT4-A Low voltage PNP power transistor General features • This device is qualified for automotive application ■ Surface-mounting TO-252 power package in tape & reel ■ NPN type is MJD31CT4-A 3 1 Applications ■ General purpose switching and amplifier

dpak 369C

Abstract: 369D 369C MJD31 MJD31C MJD31C1 MJD31CG MJD32 MJD32C TIP31
Contextual Info: MJD31, MJD31C NPN , MJD32, MJD32C (PNP) MJD31C and MJD32C are Preferred Devices Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 3 AMPERES

11V0

Contextual Info: ON Semiconductort NPN Complementary Power Transistors MJD31C PNP MJD32C DPAK For Surface Mount Applications ON Semiconductor Preferred Devices Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 3 AMPERES

D-PAK

Abstract: ISOWATT218 PNP dpak SGSIF444 S2000A MJE340-MJE350 MJD32CT4 SGSF32
Contextual Info: SELECTION GUIDE BY PART NUMBER DEVICE TYPE VcbO VcEO NPN MJ11013 MJ11014 MJ11015 MJH016 MJD31BT4 MJD31CT4 MJD32BT4 MJD32CT4 MJD44H11T4 MJD45H11T4 MJD47T4 MJD50T4 MJD112T4 MJD117T4 MJD122T4 MJD127T4 MJD200T4 MJD210T4 MJD340T4 MJD350T4 MJD2955T4 MJD3055T4 MJE172

Contextual Info: MJD31CQ 100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features           

MJD31C

Abstract: MJD32C MJD32CT4
Contextual Info: MJD32C Low voltage PNP power transistor Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the NPN type MJD31C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252 Description The device is manufactured in planar technology

TIP31 NPN Transistor diagram

Abstract: MJD32C 369D data base dpak 1N5825 MJD31 MJD31C MJD32 TIP31 TIP32
Contextual Info: MJD31, MJD31C NPN , MJD32, MJD32C (PNP) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS

TIP31 PNP Transistor

Abstract: TIP31 NPN Transistor diagram 1N5825 MJD31 MJD31C MJD31CRL MJD32 MJD32C MSD6100 TIP31
Contextual Info: MJD31, MJD31C NPN , MJD32, MJD32C (PNP) MJD31C and MJD32C are Preferred Devices Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS

Date Code Marking STMicroelectronics PACKAGE DPAK

Abstract: 13473
Contextual Info: MJD31CT4-A Low voltage NPN power transistor Datasheet − production data Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP type MJD32C 3 1 Application

JESD97

Abstract: MJD31C MJD31CT4-A
Contextual Info: MJD31CT4-A Low voltage NPN power transistor General features • This device is qualified for automotive application ■ Surface-mounting TO-252 power package in tape & reel ■ In compliance with the 2002/93/EC European Directive 3 1 Applications ■ DPAK

2L TRANSISTOR

Abstract: MJD31C TIP31 TIP32 TIP32 Series 2522L TIP32 NPN Transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors MJD31C TO-251 TO-252-2L TRANSISTOR NPN FEATURES 123 z Designed for general purpose amplifier and low speed switching applications. z Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

MJD31C

Abstract: MJD31CT4-A MJD32C Date Code Marking STMicroelectronics PACKAGE DPAK
Contextual Info: MJD31CT4-A Low voltage NPN power transistor Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP type MJD32C 3 1 Application ■ DPAK TO-252 General purpose linear and switching

mjd31c

Contextual Info: MJD31, NJVMJD31T4G, MJD31C, MJD31CT4G NPN , MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. http://onsemi.com

J32C

Abstract: J31C
Contextual Info: Product specification MJD31,MJD31C NPN MJD32,MJD32C(PNP) TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Lead Formed for Surface Mount Applications in Plastic Sleeves Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15