MJE 350 PNP POWER TRANSISTOR Search Results

transistor mje 350

Abstract: transistor mje mje 350 mje 340
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP PLASTIC MEDIUM POWER SILICON TRANSISTOR MJE 350 CEN TO126 MARKING: CEN 350 Designed For Use Line - Operated Applications Such As Low

MJE 340 transistor

Abstract: Power Transistors TO-126 Case mje 31 c MJE 350 PNP power transistor transistor mje 350 300V regulator lic datasheet MJE-350 PNP POWER TRANSISTOR SOT-32 TO 126
Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP PLASTIC MEDIUM POWER SILICON TRANSISTOR MJE 350 TO 126 Designed For Use Line - Operated Applications Such As Low

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

mpsh81 model

Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

PN4258

Abstract: IC NE 556 MJE 350 PNP power transistor MMBT4258
Contextual Info: PN4258 MMBT4258 C E C B TO-92 SOT-23 E B Mark: 78 PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

80500 TRANSISTOR

Abstract: Vo 80500 TRANSISTOR astec custom power micron fuse resistors Widlar 450FF Bipolar Power Transistor Data Astec Semiconductor 1fa MARKING AS1700-NPN
Contextual Info: AS17xx Semicustom Bipolar Array Features Description Size single tile • 87 x 75 mils Expandability of array (to 2 or 4 tiles) The AS17xx is Astec’s proprietary semicustom bipolar array. This semicustom IC is a collection of individual transistors and resistors in a fixed configuration. The custom circuit is

pn4258

Contextual Info: Discrete POWER & Signal Technologies • « » lEiMSOONPUaTOR > PN4258 MMBT4258 M ark: 78 PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. Absolute Maximum Ratings

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

PN4258

Abstract: process 65
Contextual Info: PN4258 I MMBT4258 t? D iscrete POW ER & S ig n a l Technologies National Semiconductor'" MMBT4258 PN4258 PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. Absolute Maximum Ratings*

80500 TRANSISTOR

Abstract: hLB 124 transistor astec application note "dual collector" schematic astec power supply Astec Semiconductor
Contextual Info: <////> AS17xx ASTEC Semicustom Bipolar Array Features Description Size single tile The AS17xx is Astec’s proprietary semicustom bipolar array. This semicustom IC is a collection of individual transistors and resistors in a fixed configuration. The custom circuit is

80500 TRANSISTOR

Abstract: HE 80500 1fa MARKING HE 80500 TRANSISTOR
Contextual Info: < M /> AS17XX ASTEC Semicustom Bipolar Array F e a tu re s D escription Size single tile The AS17xx is Astec’s proprietary semicustom bipolar array. This semicustom IC is a collection of individual transistors and resistors in a fixed configuration. The custom circuit is

Astec Semiconductor

Contextual Info: < AS17XX ////> ASTEC Semicustom Bipolar Array Features Description Size single tile The AS 17xx is Astec’s proprietary semicustom bipolar array. This semicustom IC is a collection of individual transistors and resistors in a fixed configuration. The custom circuit is

Contextual Info: BSS63 BSS63 C E SOT-23 B Mark: T3 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

bf91

Contextual Info: MMBTA56 PZTA56 C C E C B TO-92 B SOT-23 E SOT-223 Mark: 2G B E C MPSA56 / MMBTA56 / PZTA56 MPSA56 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Absolute Maximum Ratings*

HBF4727A

Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Contextual Info: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product

Contextual Info: PN4258 / MMBT4258 MMBT4258 PN4258 C E C B TO-92 SOT-23 E B Mark: 78 PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: FMBA56 FMBA56 C2 E1 C1 pin #1 B1 B2 E2 SuperSOTä-6 Mark: .2G Dot denotes pin #1 PNP Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Absolute Maximum Ratings*

Contextual Info: MPSA92 / MMBTA92 / PZTA92 MPSA92 MMBTA92 PZTA92 C C E C B TO-92 SOT-23 E B SOT-223 Mark: 2D B E C PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

K 3677

Contextual Info: BSR18A BSR18A C E SOT-23 B Mark: T92 PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. Sourced from Process 66. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N5401 fairchild

Abstract: 2N5401 SOT-23
Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings*

3246 SOT23

Contextual Info: BCW68G BCW68G C E SOT-23 B Mark: DG PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: BSS63 BSS63 C E SOT-23 B Mark: T3 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MMBT5087

Abstract: BF254
Contextual Info: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.