MJE2955T ST Search Results

CMJE2955T

Abstract: MJE2955T MJE2955TG
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE2955T PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ DESCRIPTION 1 TO-220 The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-252 „ ORDERING INFORMATION Ordering Number Lead Free

mje2955t

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE2955T PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ DESCRIPTION 1 TO-220 The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-252 „ ORDERING INFORMATION Ordering Number Lead Free

MJE2955T

Abstract: MJE3055T
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package MJE2955T MJE3055T MJE2955T, MJE3055T PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR

Contextual Info: UTC MJE2955T PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified

MJE2955T

Contextual Info: UTC MJE2955T PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified

Contextual Info: UTC MJE2955T PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified

utc 1018

Abstract: transistor 1008 1008 transistor MJE2955T hFE-20 a 102 transistor
Contextual Info: UTC MJE2955T PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-252 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified

MJE2955T

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE2955T PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR  DESCRIPTION 1 TO-220 The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-252  ORDERING INFORMATION Ordering Number Lead Free

Contextual Info: MJE2955T, MJE3055T MJE2955T MJE3055T PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Genera^ Purpose Amplifier and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER T— K- -1 4. COLLECTOR 4V •! - oi a 3 ; Jf~ T

MJE2955

Abstract: MJE2955T
Contextual Info: MJE2955T MJE2955T General Purpose and Switching Applications • DC Current Gain Specified to IC = 10 A • High Current Gain Bandwidth Product : fT = 2MHz Min. TO-220 1 1.Base 2.Collector 3.Emitter PNP Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: MJE2955T MJE2955T General Purpose and Switching Applications • DC Current Gain Specified to IC = 10 A • High Current Gain Bandwidth Product : fT = 2MHz Min. 1 TO-220 1.Base 2.Collector 3.Emitter PNP Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

mje2955t

Contextual Info: MJE2955T MJE2955T General Purpose and Switching Applications • DC Current Gain Specified to IC = 10 A • High Current Gain Bandwidth Product : fT = 2MHz Min. TO-220 1 1.Base 2.Collector 3.Emitter PNP Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

MJE2955T

Contextual Info: UTC MJE2955T PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified

MJE305

Abstract: MJE3055T MJE30*T MJE2955T-MJE3055T
Contextual Info: CDU MJE2955T MJE3055T MJE2955T, MJE3055T PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Genera], Purpose Amplifier and Switching Applications DIM A 8 C E F G H J °Jc. MAX 16.51 10.67 4.B3 0.90 1,40 3,88 2.79 3.43 0,56 3,56 1,15 3,75 2,29 2,54 -

MJE30*T

Abstract: MJE2955T transistor MJE3055T MJE3055T
Contextual Info: Ill MJE2955T MJE3055T MJE2955T, MJE3055T PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Genera^ Purpose Amplifier and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR DIM A B C D E F G H J K L M N MIN 14.42 9,63

pnp mje2955t

Abstract: MJE2955T NT 407 F TRANSISTOR MJE2955T-D MJE3055T mje3055T data
Contextual Info: MOTOROLA Order this document by MJE2955T/D SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MJE2955T

Abstract: MJE3055T AN415A
Contextual Info: MOTOROLA Order this document by MJE2955T/D SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MJD2955

Abstract: MJD3055 MJE2955T MJE3055T
Contextual Info: MJD2955 MJD3055 COMPLEMENTARY POWER TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T 3 APPLICATIONS GENERAL PURPOSE SWITCHING AND

Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. COMPLEMENTARY SILICON POWER TRANSISTORS PNP NPN MJE2955T MJE3055T .designed for use in general-purpose amplifier and switching applications FEATURES:

MJD2955

Abstract: MJE2955T
Contextual Info: MJD2955 MJD2955 General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • • • • • Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ -I “ Suffix) Electrically Similar to Popular MJE2955T

Contextual Info: MJD2955 MJD3055 COMPLEMENTARY POWER TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T 3 APPLICATIONS ■ GENERAL PURPOSE SWITCHING AND

0035B2

Abstract: MJE2955T ST MJD2955 MJD3055 MJE2955T MJE3055T
Contextual Info: MJD2955 MJD3055 COMPLEMENTARY POWER TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T 3 APPLICATIONS GENERAL PURPOSE SWITCHING AND

MJE3055TG

Abstract: MJE2955TG MJE3055T MJE2955T
Contextual Info: MJE2955T PNP MJE3055T (NPN) Preferred Device Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. Features 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS - 75 WATTS

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes