MJE3055T
Abstract: l5 transistor PNP MJE305 MJE2955T SGS-Thomson P011C SGS-Thomson MJE3055T mje3055T data
Text: MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS • ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and
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MJE2955T
MJE3055T
MJE3055T
O-220
MJE2955T.
O-220
l5 transistor PNP
MJE305
MJE2955T
SGS-Thomson
P011C
SGS-Thomson MJE3055T
mje3055T data
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MJE2955T
Abstract: MJE3055T
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package MJE2955T MJE3055T MJE2955T, MJE3055T PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR
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O-220
MJE2955T
MJE3055T
MJE2955T,
C-120
MJE2955T
MJE3055T
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MJE2955T
Abstract: MJE3055T MJE2955T ST TO-220 JEDEC "Silicon Power Transistors" 4 npn transistor ic L7 diode mje3055T data TO-220 COMPLEMENTARY SILICON POWER TRANSISTORS
Text: MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and
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MJE2955T
MJE3055T
MJE3055T
O-220
MJE2955T.
O-220
MJE2955T
MJE2955T ST
TO-220 JEDEC
"Silicon Power Transistors"
4 npn transistor ic
L7 diode
mje3055T data
TO-220
COMPLEMENTARY SILICON POWER TRANSISTORS
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MJE2955T-MJE3055T
Abstract: MJE2955T MJE3055T transistor MJE3055T
Text: MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary
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MJE2955T
MJE3055T
MJE3055T
O-220
MJE2955T.
O-220
MJE2955T-MJE3055T
MJE2955T
transistor MJE3055T
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MJE3055T
Abstract: No abstract text available
Text: MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and
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MJE2955T
MJE3055T
MJE3055T
O-220
MJE2955T.
O-220
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MJE2955T
Abstract: MJE3055T MJE30*T MJE2955T ST mje3055T data
Text: MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS • ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and
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MJE2955T
MJE3055T
MJE3055T
O-220
MJE2955T.
O-220
MJE2955T
MJE30*T
MJE2955T ST
mje3055T data
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MJE3055TTU
Abstract: No abstract text available
Text: MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz Min. TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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MJE3055T
O-220
MJE3055TTU
O-220
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MJE3055
Abstract: MJE3055T
Text: MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz Min. TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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MJE3055T
O-220
MJE3055
MJE3055T
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mje3055t
Abstract: No abstract text available
Text: MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz Min. 1 TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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MJE3055T
O-220
mje3055t
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2N3055
Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes
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MJE2955T
MJE3055T
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N3055
BU108
AN415A
MJE2955T ST
BDX54
2n3055 audio amplifier application note
BU326
BU100
mje13005
BDV64
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MJE3055TG
Abstract: MJE2955TG MJE3055T MJE2955T
Text: MJE2955T PNP MJE3055T (NPN) Preferred Device Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. Features 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS - 75 WATTS
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MJE2955T
MJE3055T
MJE3055TG
MJE2955TG
MJE3055T
MJE2955T
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mje3055T data
Abstract: No abstract text available
Text: ON Semiconductor PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general−purpose amplifier and switching applications. *ON Semiconductor Preferred Device • DC Current Gain Specified to 10 Amperes
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MJE2955T
MJE3055T
MJE3055T
mje3055T data
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pnp mje2955t
Abstract: MJE2955T MJE3055T mje3055T data
Text: ON Semiconductort PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *ON Semiconductor Preferred Device • DC Current Gain Specified to 10 Amperes
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MJE2955T
MJE3055T
r14525
MJE2955T/D
pnp mje2955t
MJE2955T
MJE3055T
mje3055T data
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pnp mje2955t
Abstract: MJE3055T MJE2955T
Text: ON Semiconductor PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *ON Semiconductor Preferred Device • DC Current Gain Specified to 10 Amperes
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MJE2955T
MJE3055T
r14525
MJE2955T/D
pnp mje2955t
MJE3055T
MJE2955T
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transistor MJE3055T
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR TRANSISTOR MJE3055T/MJE2955T GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-220 QUICK REFERENCE DATA SYMBOL VCBO VCEO IC ICM Ptot VCEsat VF tf PARAMETER
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MJE3055T/MJE2955T
O-220
transistor MJE3055T
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0035B2
Abstract: MJE2955T ST MJD2955 MJD3055 MJE2955T MJE3055T
Text: MJD2955 MJD3055 COMPLEMENTARY POWER TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T 3 APPLICATIONS GENERAL PURPOSE SWITCHING AND
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MJD2955
MJD3055
O-252
MJE2955T
MJE3055T
0035B2
MJE2955T ST
MJD2955
MJD3055
MJE2955T
MJE3055T
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MJE3055T
Abstract: No abstract text available
Text: SILICON P LASTIC POWER TRANSISTOR NPN MJE3055T 10A 75W Technical Data …designed for general-purpose switching and amplifier application. F F F F DC Current Gain - h FE = 20 – 100 @ IC = 4Adc Collector-Emitter Saturation Voltage – VCE sat = 1.1 Vdc (Max) @ IC = 4Adc
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MJE3055T
O-220
500kHz
MJE3055T
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS MJE2955T PNP MJE3055T NPN TO-220 Plastic Package With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications
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MJE2955T
MJE3055T
O-220
C-120
MJE3055T-2955TRev
291102E
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Transistor MJF3055
Abstract: 221D AN1040 MJE2955T MJE3055T MJF2955 MJF3055
Text: ON Semiconductort NPN Complementary Silicon Power Transistors MJF3055 PNP MJF2955 . . . specifically designed for general purpose amplifier and switching applications. • • • • • • • Isolated Overmold Package 1500 Volts RMS Min Electrically Similar to the Popular MJE3055T and MJE2955T
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MJF3055
MJF2955
MJE3055T
MJE2955T
E69369,
r14525
MJF3055/D
Transistor MJF3055
221D
AN1040
MJE2955T
MJF2955
MJF3055
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Untitled
Abstract: No abstract text available
Text: r Z Z SGS-THOMSON & *im iO T iO gS MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor In Jedec TO-220 package. It is
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MJE2955T
MJE3055T
MJE3055T
O-220
MJE2955T.
O-220
C08B1C
SC0696C
300ns,
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Untitled
Abstract: No abstract text available
Text: rz 7 Ä T# SGS-THOMSON MJE2955T MJE3055T [MO gfô l[L[iera®*S COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is
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MJE2955T
MJE3055T
MJE3055T
O-220
MJE2955T.
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E3055T
Abstract: E2955T e3055 E2955T-MJ E2955T-MJE3055T e2955
Text: r z T SGS-THOMSON Ä 7 # RSD lS S l[LliSTl^©iBOi MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec T0-220 package. It is intended for power switching circuits and
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MJE2955T
MJE3055T
MJE3055T
T0-220
MJE2955T.
E3055T
E2955T
e3055
E2955T-MJ
E2955T-MJE3055T
e2955
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TL MJE2955T
Abstract: JF2955
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Transistors . . . specifically designed for general purpose amplifier and switching applications. • Isolated Overmold Package 1500 Volts RMS Min • Electrically Similar to the Popular MJE3055T and MJE2955T
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MJE3055T
MJE2955T
E69369,
AN1040.
TL MJE2955T
JF2955
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power ic 501 amp
Abstract: MJE305 MJE2955T ST MJE2955T MJE3055T
Text: MJE2955T PNP / MJE3055T NPN ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( lc = 200 mA, lB = 0 ) Collector Cutoff Current (V CE = 3 0 V ,IB = 0 )
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MJE2955T
MJE3055T
15CFC
power ic 501 amp
MJE305
MJE2955T ST
MJE3055T
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