MMBR951L
Abstract: No abstract text available
Text: ^£,mi-Condactoi ^Pi , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MMBR951L Silicon NPN RF Transistor _ DESCRIPTION SOT- 2 3 package • Low Noise • High Current-Gain Bandwidth Product
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MMBR951L
MMBR951L
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Transistor A111
Abstract: No abstract text available
Text: ^zmi-L.onau.cto'i , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN RF Transistor BFR520 DESCRIPTION • High Power Gain ^^ • High Current Gain Bandwidth Product SOT- 2 3 package
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BFR520
900MHz
150T150
Transistor A111
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BFG193
Abstract: No abstract text available
Text: J. C/ , L/ ne. u TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BFG193 Silicon NPN RF Transistor DESCRIPTION • Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, lc = 10 mA, f = 900 MHz • High Gain
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BFG193
500MHz
900MHz
BFG193
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Untitled
Abstract: No abstract text available
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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Untitled
Abstract: No abstract text available
Text: CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable
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OT223
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2x062h
Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1
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ZMM22
ZMM24
ZMM27
ZMM43
ZMM47
2x062h
gk105
1SS216
GK104
SMD Transistors w06
D20SB80
SMD marking 5As
D25SB80
LRB706F-40T1G
2x062
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2N6284 inverter schematic diagram
Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F
Text: ON Semiconductor Master Components Selector Guide AC−DC Controllers and Regulators; Amplifiers and Comparators; Analog Switches; Bipolar Transistors; Clock and Data Distribution; Clock Generation; Custom; DC−DC Controllers, Converters, and Regulators; Digital
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SG388/D
2N6284 inverter schematic diagram
NTD18N06
MKP9V160
sine wave inverter tl494 circuit diagram
ECL IC NAND
adp3121
DARLINGTON TRANSISTOR ARRAY
ezairo
MC74HC4538
TIP142 6403 F
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ic LM 356
Abstract: RT9168-15CBR RT9168-18CBR RT9168 RT9168-16CBR RT9168-17CBR RT9168-19CBR RT9168-20CBR lj marking sot25 RT9168-26CBR
Text: RT9168/A 200mA/500mA Fixed Output Voltage LDO Regulator General Description Features The RT9168/A is a 200mA/500mA low dropout and z Stable with Low-ESR Output Capacitor micropower portable z Low Dropout Voltage 220mV at 200mA applications. The output voltages range from 1.5V to
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RT9168/A
200mA/500mA
RT9168/A
220mV
200mA)
100mV
OT-25
ic LM 356
RT9168-15CBR
RT9168-18CBR
RT9168
RT9168-16CBR
RT9168-17CBR
RT9168-19CBR
RT9168-20CBR
lj marking sot25
RT9168-26CBR
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Untitled
Abstract: No abstract text available
Text: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents SN65DSI86-Q1 SLLSEJ5 – JULY 2014 SN65DSI86-Q1 MIPI DSI to eDP Bridge 1 Features 2 Applications • • • • • • • • • • • • • • • • • Embedded DisplayPort eDP 1.4 Compliant
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SN65DSI86-Q1
SN65DSI86-Q1
62Gbps
16Gbps,
43Gbps,
24Gbps,
32Gbps,
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Untitled
Abstract: No abstract text available
Text: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents SN65DSI86-Q1 SLLSEJ5 – JULY 2014 SN65DSI86-Q1 MIPI DSI to eDP Bridge 1 Features 2 Applications • • • • 1 • • • • • • • • • • • • • Embedded DisplayPort eDP 1.4 Compliant
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SN65DSI86-Q1
SN65DSI86-Q1
62Gbps
16Gbps,
43Gbps,
24Gbps,
32Gbps,
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matrix 2088ab
Abstract: 2088AB led matrix torque settings chart for metric stainless bolts led matrix 2088ab 2088AB* led matrix PHASE CONTROL THYRISTOR MODULE TT 56 N SIL-PAD to-247 Ultrasonic humidifier circuit full wave BRIDGE RECTIFIER 1044 2088AB
Text: Soldering and Mounting Techniques Reference Manual SOLDERRM/D Rev. 5, January−2007 SCILLC, 2007 “All Rights Reserved” SOLDERRM FULLPAK, ICePAK, MicroIntegration, MicroLeadless, MOSORB, MiniMOSORB, and POWERTAP are trademarks of Semiconductor Components Industries, LLC SCILLC . Cho−Therm is a registered trademark of Chromerics, Inc. Grafoil is a registered trademark of
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January-2007
matrix 2088ab
2088AB led matrix
torque settings chart for metric stainless bolts
led matrix 2088ab
2088AB* led matrix
PHASE CONTROL THYRISTOR MODULE TT 56 N
SIL-PAD to-247
Ultrasonic humidifier circuit
full wave BRIDGE RECTIFIER 1044
2088AB
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TRANSISTOR BI 187
Abstract: sot-23 npn marking code cr TRANSISTOR BC 187 BUV71 bc 187 npn transistor TRANSISTOR BI 237 on BC 187 TRANSISTOR telefunken ta 750 12A3 T0126
Text: L 1 TELEFUNKEN ELECTRONIC 17E D • ô'téOO'ib 000*5571 0 . BUV71 m S F M IM electronic CrMiiwltchnofogw» T-S3-J3 Silicon NPN Power Transistors Applicâtions: Motor controls, switching mode power supplies Features: • Implantation • High reverse voltage
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BUV71
T0126
15A3DIN
TRANSISTOR BI 187
sot-23 npn marking code cr
TRANSISTOR BC 187
BUV71
bc 187 npn transistor
TRANSISTOR BI 237
on BC 187 TRANSISTOR
telefunken ta 750
12A3
T0126
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706 TRANSISTOR sot-23
Abstract: No abstract text available
Text: T r lu i r BFR92A/BFR92AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure •
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BFR92A/BFR92AR
BFR92A
BFR92AR
D-74025
31-Oct-97
706 TRANSISTOR sot-23
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SOT-23 marking 717
Abstract: un 1044 Telefunken u 257
Text: Temic BFR92/BFR92R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain
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BFR92/BFR92R
BFR92
BFR92R
D-74025
31-Oct-97
SOT-23 marking 717
un 1044
Telefunken u 257
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Untitled
Abstract: No abstract text available
Text: Temic BFR92AW S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency
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BFR92AW
Vattk20
D-74025
07-Nov-97
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Untitled
Abstract: No abstract text available
Text: Temic BFP92A Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications RF amplifier up to GHz range, especially for wide band antenna amplifiers. Features • High power gain • Low noise figure
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BFP92A
D-74025
31-Oct-97
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sl2 357
Abstract: ML 1557 b transistor telefunken P 152 MT a3 sot 343
Text: Temic BFP93A S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency
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BFP93A
D-74025
31-Oct-97
sl2 357
ML 1557 b transistor
telefunken P 152 MT
a3 sot 343
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Untitled
Abstract: No abstract text available
Text: Temic BFP92AW Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications RF amplifier up to GHz range, especially for wide band antenna amplifiers. Features • High power gain • Low noise figure
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BFP92AW
D-74025
07-Nov-97
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sl2 357
Abstract: ML 1557 b transistor transistor MW 882
Text: Temic BFP93AW S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency
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BFP93AW
D-74025
07-Nov-97
sl2 357
ML 1557 b transistor
transistor MW 882
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temic 0675
Abstract: 7334
Text: Tem ic BFQ81 Semiconductors Silicon NPN Planer RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. M RF amplifier up to 2 GHz, especially for mobile telephone. Features • Small feedback capacitance • Low noise figure
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BFQ81
D-74025
31-Oct-97
temic 0675
7334
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0415C
Abstract: SB7C652-5N40
Text: Philips Semiconductors Microcontroller Products Product specification CMOS single-chip 8-bit microcontroller PIN CONFIGURATION DESCRIPTION i a K IÜI BUS The 87C652 Single-Chip 8-Bit Microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51
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87C652
87C652
80C51
80C51.
16-bit
80C51)
0415C
SB7C652-5N40
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SAA 1251
Abstract: saa 1291 SN40 1Ns4 87C652 1251 saa 80C51 MANUAL 80C51 ME 1117 Philips FA 291 AMPLIFIER
Text: Philips Semiconductors Product specification CMOS single-chip 8-bit microcontroller 87C652 DESCRIPTION PIN CONFIGURATION The 87C652 Single-Chip 8-Bit Microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51 microcontroller family. The 87C652 has the
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87C652
87C652
80C51
80C51.
16-bit
80C51)
853-0590B
SAA 1251
saa 1291
SN40
1Ns4
1251 saa
80C51 MANUAL
ME 1117
Philips FA 291 AMPLIFIER
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transistor WT5
Abstract: 4FDK
Text: Philips Semiconductors Microcontroller Products Preliminary specification Low-voltage single-chip 8-bit microcontrollers FEATURES 80CL31/80CL51 DESCRIPTION • Enhanced architecture with: • Full static 80C51 CPU The 80CL51 is m anufactured in an advanced
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80CL31/80CL51
80C51
40-lead
16-bit
P80CL51/31
transistor WT5
4FDK
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FD-24K
Abstract: FD123 arco capacitors ARCO Mica capacitors F0752 SCDM ARCO 36KJ RS-153 a10u
Text: Dipped Mica Capacitors Part Number Construction DM 15 Type’ Size2 1. 2. 3 TR 510 Packaging6 Capacitance3 Tolerance4 Type: DM Size: 05, 10; 15; 19; 20; 30 Capacitance: The first two digits are significant, the last digit indicates the number of zeros. Tolerance: D=t0.5pF; E=±1/2%; F=±1%;
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digi90
50VDC
202IJ
FD-24K
FD123
arco capacitors
ARCO Mica capacitors
F0752
SCDM
ARCO
36KJ
RS-153
a10u
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