ML MARKING SOT 89 Search Results

MMBR951L

Contextual Info: ^£,mi-Condactoi ^Pi , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MMBR951L Silicon NPN RF Transistor _ DESCRIPTION SOT- 2 3 package • Low Noise • High Current-Gain Bandwidth Product

TRANSISTOR BI 187

Abstract: sot-23 npn marking code cr TRANSISTOR BC 187 BUV71 bc 187 npn transistor TRANSISTOR BI 237 on BC 187 TRANSISTOR telefunken ta 750 12A3 T0126
Contextual Info: L 1 TELEFUNKEN ELECTRONIC 17E D • ô'téOO'ib 000*5571 0 . BUV71 m S F M IM electronic CrMiiwltchnofogw» T-S3-J3 Silicon NPN Power Transistors Applicâtions: Motor controls, switching mode power supplies Features: • Implantation • High reverse voltage

Transistor A111

Contextual Info: ^zmi-L.onau.cto'i , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN RF Transistor BFR520 DESCRIPTION • High Power Gain ^^ • High Current Gain Bandwidth Product SOT- 2 3 package

BFG193

Contextual Info: J. C/ , L/ ne. u TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BFG193 Silicon NPN RF Transistor DESCRIPTION • Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, lc = 10 mA, f = 900 MHz • High Gain

706 TRANSISTOR sot-23

Contextual Info: T r lu i r BFR92A/BFR92AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure •

SOT-23 marking 717

Abstract: un 1044 Telefunken u 257
Contextual Info: Temic BFR92/BFR92R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain

kl SN 102 94-0

Abstract: WV2 marking marking WV2 Q 371 Transistor BFQ67WI
Contextual Info: TEMIC BFQ67W Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications Low noise small signal amplifiers up to 2 GHz. This tran­ sistor has superior noise figure and associated gain

Contextual Info: Temic BFR92AW S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency

Contextual Info: CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable

Contextual Info: CLY5 Datasheet High-Power Packaged GaAs FET Description The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable

2x062h

Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Contextual Info: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1

Contextual Info: Temic BFP92A Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications RF amplifier up to GHz range, especially for wide band antenna amplifiers. Features • High power gain • Low noise figure

sl2 357

Abstract: ML 1557 b transistor telefunken P 152 MT a3 sot 343
Contextual Info: Temic BFP93A S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency

Contextual Info: Temic BFP92AW Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications RF amplifier up to GHz range, especially for wide band antenna amplifiers. Features • High power gain • Low noise figure

2N6284 inverter schematic diagram

Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F
Contextual Info: ON Semiconductor Master Components Selector Guide AC−DC Controllers and Regulators; Amplifiers and Comparators; Analog Switches; Bipolar Transistors; Clock and Data Distribution; Clock Generation; Custom; DC−DC Controllers, Converters, and Regulators; Digital

ic LM 356

Abstract: RT9168-15CBR RT9168-18CBR RT9168 RT9168-16CBR RT9168-17CBR RT9168-19CBR RT9168-20CBR lj marking sot25 RT9168-26CBR
Contextual Info: RT9168/A 200mA/500mA Fixed Output Voltage LDO Regulator General Description Features The RT9168/A is a 200mA/500mA low dropout and z Stable with Low-ESR Output Capacitor micropower portable z Low Dropout Voltage 220mV at 200mA applications. The output voltages range from 1.5V to

temic 0675

Abstract: 7334
Contextual Info: Tem ic BFQ81 Semiconductors Silicon NPN Planer RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. M RF amplifier up to 2 GHz, especially for mobile telephone. Features • Small feedback capacitance • Low noise figure

0415C

Abstract: SB7C652-5N40
Contextual Info: Philips Semiconductors Microcontroller Products Product specification CMOS single-chip 8-bit microcontroller PIN CONFIGURATION DESCRIPTION i a K IÜI BUS The 87C652 Single-Chip 8-Bit Microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51

SAA 1251

Abstract: saa 1291 SN40 1Ns4 87C652 1251 saa 80C51 MANUAL 80C51 ME 1117 Philips FA 291 AMPLIFIER
Contextual Info: Philips Semiconductors Product specification CMOS single-chip 8-bit microcontroller 87C652 DESCRIPTION PIN CONFIGURATION The 87C652 Single-Chip 8-Bit Microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51 microcontroller family. The 87C652 has the

Contextual Info: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents SN65DSI86-Q1 SLLSEJ5 – JULY 2014 SN65DSI86-Q1 MIPI DSI to eDP Bridge 1 Features 2 Applications • • • • • • • • • • • • • • • • • Embedded DisplayPort eDP 1.4 Compliant

Contextual Info: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents SN65DSI86-Q1 SLLSEJ5 – JULY 2014 SN65DSI86-Q1 MIPI DSI to eDP Bridge 1 Features 2 Applications • • • • 1 • • • • • • • • • • • • • Embedded DisplayPort eDP 1.4 Compliant

transistor WT5

Abstract: 4FDK
Contextual Info: Philips Semiconductors Microcontroller Products Preliminary specification Low-voltage single-chip 8-bit microcontrollers FEATURES 80CL31/80CL51 DESCRIPTION • Enhanced architecture with: • Full static 80C51 CPU The 80CL51 is m anufactured in an advanced

matrix 2088ab

Abstract: 2088AB led matrix torque settings chart for metric stainless bolts led matrix 2088ab 2088AB* led matrix PHASE CONTROL THYRISTOR MODULE TT 56 N SIL-PAD to-247 Ultrasonic humidifier circuit full wave BRIDGE RECTIFIER 1044 2088AB
Contextual Info: Soldering and Mounting Techniques Reference Manual SOLDERRM/D Rev. 5, January−2007 SCILLC, 2007 “All Rights Reserved” SOLDERRM FULLPAK, ICePAK, MicroIntegration, MicroLeadless, MOSORB, MiniMOSORB, and POWERTAP are trademarks of Semiconductor Components Industries, LLC SCILLC . Cho−Therm is a registered trademark of Chromerics, Inc. Grafoil is a registered trademark of

FD-24K

Abstract: FD123 arco capacitors ARCO Mica capacitors F0752 SCDM ARCO 36KJ RS-153 a10u
Contextual Info: Dipped Mica Capacitors Part Number Construction DM 15 Type’ Size2 1. 2. 3 TR 510 Packaging6 Capacitance3 Tolerance4 Type: DM Size: 05, 10; 15; 19; 20; 30 Capacitance: The first two digits are significant, the last digit indicates the number of zeros. Tolerance: D=t0.5pF; E=±1/2%; F=±1%;