MLP08 Search Results

DSA0024094

Contextual Info: FDMC7692S N-Channel Power Trench SyncFETTM 30 V, 12.5 A, 9.3 m: Features General Description This FDMC7692S is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well

FDMC7680

Abstract: MO-229 148 FSC
Contextual Info: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 m: Features General Description „ Max rDS on = 7.2 m: at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This

FDMC7672

Abstract: MO-229
Contextual Info: FDMC7672 N-Channel Power Trench MOSFET 30 V, 16.9 A, 5.7 m: Features General Description „ Max rDS on = 5.7 m: at VGS = 10 V, ID = 16.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This

Contextual Info: FPF2700 / FPF2701 / FPF2702 — AccuPower 0.4~2 A Adjustable Over-Current Protection Load Switches Features Description • •        The AccuPower™ FPF270X series is a family of current-limit load switches that provide full protection to

SJ 38

Abstract: qsc 1110 MicroPak-10 dqfn8 SJ38 mac010a M14D M16D jedec sot-23 6 lead MTC14
Contextual Info: Revised February 2004 Logic and Switch Products Ordering Information Ordering Information TinyLogic is a trademark of Fairchild Semiconductor Corporation. CROSSVOLT, FACT, FACT Quiet Series, FAST, FASTr, and MicroPak are trademarks of Fairchild Semiconductor Corporation.

PHILIPS toroidal core 2P80

Abstract: PHILIPS toroidal core 3c90 push-pull converter design Philips Components, Soft Ferrites 3C11 philips 3e1 ferrite material PHILIPS toroidal core 4a11 ETD29-3C90 smd marking 330 e71 ETD59-3F3 philips 4b1 ferrite rod
Contextual Info: Soft Ferrites and Accessories Contents Introduction Quality Environmental aspects of soft ferrites Ordering information Applications Literature and reference publications Ferrite materials survey and specifications - Ferrite materials survey - Material specifications and graphs

FDMC6675

Abstract: fairchild top marking FDMC6675BZ mo-229 pad layout MO-229
Contextual Info: FDMC6675BZ P-Channel Power Trench MOSFET -30 V, -20 A, 14.4 mΩ Features General Description „ Max rDS on = 14.4 mΩ at VGS = -10 V, ID = -9.5 A „ HBM ESD protection level of 8 kV typical(note 3) The FDMC6675BZ has been designed to minimize losses in

FDMC4435BZ

Abstract: RCA 395 fairchild top marking mo-229 pad layout trench mosfet MO-229 63A23
Contextual Info: FDMC4435BZ P-Channel Power Trench MOSFET -30 V, -18 A, 20 m: Features General Description „ Max rDS on = 20 m: at VGS = -10 V, ID = -8.5 A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This

Contextual Info: FDMC86520L N-Channel Power Trench MOSFET 60 V, 22 A, 7.9 mΩ Features General Description „ Max rDS on = 7.9 mΩ at VGS = 10 V, ID = 13.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node

FIN1027

Abstract: FIN1028 FIN1028M FIN1028MPX M08A MO-229
Contextual Info: Revised June 2003 FIN1028 3.3V LVDS 2-Bit High Speed Differential Receiver General Description Features This dual receiver is designed for high speed interconnects utilizing Low Voltage Differential Signaling LVDS technology. The receiver translates LVDS levels, with a typical differential input threshold of 100 mV, to LVTTL signal levels.

Contextual Info: FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description ̈ Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node

Contextual Info: FDMC7672 N-Channel Power Trench MOSFET 30 V, 16.9 A, 5.7 m: Features General Description „ Max rDS on = 5.7 m: at VGS = 10 V, ID = 16.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This

FOL216CIW

Abstract: FAN5602 FAN5602MP33X FAN5602MP45X FAN5602MP5X FOL625CIW
Contextual Info: FAN5602 — Universal Step-Up/Step-Down Charge Pump Regulated DC/DC Converter Features Description • Low-Noise, Constant-Frequency Operation at Heavy The FAN5602 is a universal switched capacitor DC/DC converter capable of step-up or step-down operation.

FDMC86102Z

Abstract: FDMC86102LZ
Contextual Info: FDMC86102LZ N-Channel Power Trench MOSFET 100 V, 22 A, 24 mΩ Features General Description „ Max rDS on = 24 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process

Contextual Info: FDM3622 N-Channel PowerTrench MOSFET 100V, 4.4A, 60mΩ Features General Description „ Max rDS on = 60mΩ at VGS = 10V, ID = 4.4A „ Low Miller Charge This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has

R015 marking

Contextual Info: FDMC2523P P-Channel QFET -150V, -3A, 1.5Ω Features General Description „ Max rDS on = 1.5Ω at VGS = -10V, ID = -1.5A These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has

LFPAK footprint

Abstract: PowerPAK 1212-8 stencil LFPAK footprint Renesas PSMN8R2-80YS POWERPAK SO8 LFPAK56 DFN 3.3X3.3 PSMN7R0-30MLC PSMN012-60YS SOT223 nxp
Contextual Info: Ultra-reliable LFPAK56 and LFPAK33 Tougher just got smaller NXP’s LFPAK – Designed for reliability Designing a complex automotive system, a high efficiency industrial power supply or a slimline portable PC ? NXP has a range of smaller, faster, cooler MOSFETs to help you deliver maximum reliability.

Contextual Info: FDMC7664 N-Channel PowerTrench MOSFET 30 V, 18.8 A, 4.2 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This

FDMC7680

Abstract: MO-229
Contextual Info: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 m: Features General Description „ Max rDS on = 7.2 m: at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This

FDMC6675

Abstract: FDMC6675BZ MO-229
Contextual Info: FDMC6675BZ P-Channel Power Trench MOSFET -30 V, -20 A, 14.4 m: Features General Description „ Max rDS on = 14.4 m: at VGS = -10 V, ID = -9.5 A „ HBM ESD protection level of 8 kV typical(note 3) The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and

RG 710

Abstract: FDMC8882 MO-229
Contextual Info: FDMC8882 N-Channel Power Trench MOSFET 30 V, 16 A, 14.3 m: Features General Description „ Max rDS on = 14.3 m: at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This

FDMC7692S

Abstract: MO-229 APS-5
Contextual Info: FDMC7692S N-Channel Power Trench SyncFETTM 30 V, 12.5 A, 9.3 m: Features General Description „ Max rDS on = 9.3 m: at VGS = 10 V, ID = 12.5 A This FDMC7692S is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially

MLP0603-501

Abstract: MLS0603-4S7-800 MLP0805-102 MLN1206-122
Contextual Info: FERROXCUBE DATA A SH SHEET EET Multilayer suppressors EMI-suppression products Supersedes data of February 2002 2004 Sep 01 Ferroxcube Multilayer suppressors EMI-suppression products Main applications areas for multilayer suppressors are: • computer and peripheral equipment: mother board,

FDMC8884

Abstract: fairchild top marking MO-229 GS 069
Contextual Info: FDMC8884 N-Channel Power Trench MOSFET 30 V, 15 A, 19 m: Features General Description „ Max rDS on = 19 m: at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This