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    MM1712 TRANSISTOR Search Results

    MM1712 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    MM1712 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    mm1712

    Contextual Info: MM1712 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)50ã V(BR)CBO (V)60 I(C) Max. (A) Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.


    Original     		MM1712 Freq200M PDF

    2N4889

    Abstract: MM1712 2N4888 2N4419 mm1614 MM1712 transistor 2N4996 2N3633 2N6522 N6007
    Contextual Info: TO-72 TO-72 TO-92 TO-98 TO-98 OOOOO OOOOO OOOOO CMCMg ? in m 0 0 in cmco tn in in in m in i co co COCO I r r r r I I COCO I 50 s o o o o o in in in in ^ o OOOO in 1 in m —in 1—T —o T— OO IOO o O I *- TT“ r* "ST s a m in in in rCMCMCMCMCM OOOOo ^ CMCMCM


    OCR Scan     		A13b4SA 2N3502 N3503 2N3504 2N3505 2N3633 2N3671 2N3672 2N3700 2N3701 2N4889 MM1712 2N4888 2N4419 mm1614 MM1712 transistor 2N4996 2N6522 N6007 PDF

    2n4888

    Abstract: 2N4889 MM1712 transistor 2N6522 2N3633 2N4996 2N4419 2N6006 2N6521 2N3502
    Contextual Info: CM m in m i CM CM CM I CM • I 0 10 0 O O 1 T~ T—1— o o o o o T -r1 I 0 000 I 1- m m m I I O O O 1 1 in in lo O O O O O o o o o o CO CO CO CO CO o o o o o o o o o o CO CO CO CO CO o o o o o o o o o o CO CO co co CO o o o o o TT CM CM CM co <0 CM CM CO 0


    OCR Scan     		2N3502 N3503 2N3504 2N3505 2N3633 2N3671 2N3672 2N3700 2N3701 2N3724 2n4888 2N4889 MM1712 transistor 2N6522 2N4996 2N4419 2N6006 2N6521 PDF

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF