MMA719 Search Results
MMA719 Datasheets Context Search
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Contextual Info: MMA719 4 Watt InGaP HBT Amplifier 6060 OUTLINE SOIC8 OUTLINE Description: Features: The MMA719-6060 is a Power InGaP HBT device that is designed to provide moderate power levels from 100 MHz to 2.5 GHz. Best operation is obtained across narrow bandwidths, typically 10%. The device is characterized |
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MMA719 MMA719-6060 | |
semiconductor A 6060Contextual Info: MMA719 4 Watt InGaP HBT Amplifier 6060 OUTLINE SOIC8 OUTLINE Description: Features: The MMA719-6060 is a Power InGaP HBT device that is designed to provide moderate power levels from 100 MHz to 2.5 GHz. Best operation is obtained across narrow bandwidths, typically 10%. The device is characterized |
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MMA719 MMA719-6060 semiconductor A 6060 | |
MSPD2018
Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
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foc17091 MSPD2018 MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode | |
tunnel diode GaAs
Abstract: jesd 00E-12 MMA703 MMA701 MMA705 p-hemt GaAs tunnel diode JESD22*108 MMA704
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