MMBT2222A SOT23 Search Results

MMBT2222

Abstract: MMBT2222A MMBT2222A SOT23
Contextual Info: MMBT2222 / MMBT2222A NPN Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value MMBT2222 MMBT2222A Unit Collector Base Voltage VCBO 60 75

h11E

Contextual Info: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2907A / MMBT2907A PNP • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P

Contextual Info: MMBT2222 MMBT2222A 3 * “G” Lead Pb -Free 1 2 SOT-23 VCEO u WEITRON http://www.weitron.com.tw MMBT2222 MMBT2222A ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain

MMBT2222A

Abstract: PMBT2907A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MMBT2222A NPN switching transistor Product specification Supersedes data of 2000 Apr 11 2004 Jan 16 Philips Semiconductors Product specification NPN switching transistor MMBT2222A FEATURES PINNING • High current max. 600 mA

BP317

Abstract: MMBT2222A PMBT2907A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT2222A NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT2222A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V).

MMBT2222

Abstract: MMBT2222A mmbt2222 datasheet SOT23 transistor mmbt2222A
Contextual Info: MMBT2222 / MMBT2222A NPN Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Value Symbol Unit MMBT2222 MMBT2222A Collector Base Voltage VCBO 60 75

MMBT2222

Abstract: MMBT2222A
Contextual Info: MMBT2222 / MMBT2222A NPN Silicon General Purpose Transistor SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol MMBT2222 MMBT2222A Unit Collector Base Voltage VCBO 60 75 V Collector Emitter Voltage VCEO 30 40 V Emitter Base Voltage VEBO 5 6

SOT-23 marking r1p

Abstract: k1p sot-23 PN2222 SOT23 R1P marking K1P SOT-23 sot-23 1p MMBT2222A SOT23 sot-23 1P F sot-23 Marking k1p PN2222A
Contextual Info: PN2222A / MMBT2222A NPN SMALL SIGNAL TRANSISTORS POWER SEMICONDUCTOR Features • • • • MMBT2222A Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Ideal for Switching and Amplifier Applications Complementary PNP Types Available

k1P transistor sot 23

Abstract: K1p TRANSISTOR sot-23 Marking k1p k1p sot-23 NPN K1P K1P DIODES marking code k1p sot-23 k1p sot 23
Contextual Info: MMBT2222A NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMBT2222A Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT2907A Ideal for Medium Power Amplification and Switching SOT-23 A C Mechanical Data · ·

Contextual Info: MMBT2222 MMBT2222A 3 1 2 SOT-23 VCEO u WEITRON http://www.weitron.com.tw MMBT2222 MMBT2222A ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC=0.1 mAdc, VCE=10 Vdc)

transistor M22 marking

Contextual Info: MMBT2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking MMBT2222A M22 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS MMBT2907A

transistor M22 marking

Abstract: marking M22 MMBT2222A MMBT2907A marking BS SOT-23
Contextual Info: MMBT2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking MMBT2222A M22 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS MMBT2907A

k1P transistor sot 23

Contextual Info: SPICE MODEL: MMBT2222A MMBT2222A NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction SOT-23 Complementary PNP Type Available MMBT2907A Ideal for Medium Power Amplification and Switching A Lead Free/RoHS Compliant (Note 2)

SMBT2907AW

Abstract: MARKING s1P smbt2222a sot23 marking code S1p MARKING BCW66 77 ic marking code transistor marking code 24 24 marking code transistor transf SMBT2222A SOT23
Contextual Info: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P Pin Configuration

k1P transistor sot 23

Abstract: K1p TRANSISTOR sot-23 Marking k1p
Contextual Info: SPICE MODEL: MMBT2222A MMBT2222A NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction SOT-23 Complementary PNP Type Available MMBT2907A Ideal for Medium Power Amplification and Switching A Available in Lead Free/RoHS Compliant Version (Note 2)

h22e

Contextual Info: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP Type Marking SMBT2222A/MMBT2222A s1P 1 Pin Configuration 1=B 2=E Package

K1p TRANSISTOR

Abstract: k1p sot-23 k1P transistor sot 23 marking k1p J-STD-020A MMBT2222A MMBT2222A-7 MMBT2222A-7-F MMBT2907A sot-23 Marking k1p
Contextual Info: MMBT2222A NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMBT2222A Features • · · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT2907A Ideal for Medium Power Amplification and Switching Also Available in Lead Free Version

npn 2222 transistor

Abstract: MMBT2222A SMBT2222A SMBT2907A MARKING s1P
Contextual Info: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161

Contextual Info: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161

Contextual Info: DISCRETE SEMICONDUCTORS DAT MMBT2222A NPN switching transistor Product data sheet Supersedes data of 2000 Apr 11 2004 Jan 16 NXP Semiconductors Product data sheet NPN switching transistor MMBT2222A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V).

MARKING s1P

Contextual Info: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161

Contextual Info: MMBT2222 MMBT2222A 3 1 2 SOT-23 VCEO WEITRON http://www.weitron.com.tw MMBT2222 MMBT2222A ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC=0.1 mAdc, VCE=10 Vdc)

MMBT2222A

Abstract: PMBT2907A transistor mmbt2222a
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MMBT2222A NPN switching transistor Product data sheet Supersedes data of 2000 Apr 11 2004 Jan 16 NXP Semiconductors Product data sheet NPN switching transistor MMBT2222A FEATURES PINNING • High current max. 600 mA PIN

MMBT2222

Abstract: MMBT2709 MMBT2222A MMBT2709A marking M1P
Contextual Info: MMBT2222 / MMBT2222A MMBT2222 / MMBT2222A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage NPN NPN Version 2006-05-15 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse