MMBT2222ALT1
Abstract: No abstract text available
Text: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage MMBT2222LT1 MMBT2222ALT1 VCEO Collector–Base Voltage MMBT2222LT1 MMBT2222ALT1
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MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1
MMBT2222LT1
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MMBT2222ALT1
Abstract: m1b marking 1N914 MMBT2222 MMBT2222A MMBT2222ALT3 MMBT2222LT1 MMBT2222LT3 1n914 sot
Text: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage MMBT2222LT1 MMBT2222ALT1 VCEO Collector–Base Voltage MMBT2222LT1 MMBT2222ALT1
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MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1
MMBT2222LT1
r14525
m1b marking
1N914
MMBT2222
MMBT2222A
MMBT2222ALT3
MMBT2222LT1
MMBT2222LT3
1n914 sot
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1N914 SOT-23
Abstract: m1b marking 1N914 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222ALT3 MMBT2222LT1 MMBT2222LT3
Text: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage MMBT2222LT1 MMBT2222ALT1 VCEO Collector–Base Voltage MMBT2222LT1 MMBT2222ALT1
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MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1
MMBT2222LT1
r14525
1N914 SOT-23
m1b marking
1N914
MMBT2222
MMBT2222A
MMBT2222ALT3
MMBT2222LT1
MMBT2222LT3
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M1B marking
Abstract: 1N914 SOT-23 MMBT2222A 1n914 sot marking 1p sot23 1P SOT-23 marking code m1b MMBT2222ALT1G 1p sot MMBT2222LT3G
Text: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon Features •ăPb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collectorā-āEmitter Voltage Unit VCEO MMBT2222LT1 MMBT2222ALT1 Collectorā-āBase Voltage
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MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1
MMBT2222LT1
M1B marking
1N914 SOT-23
MMBT2222A
1n914 sot
marking 1p sot23
1P SOT-23
marking code m1b
MMBT2222ALT1G
1p sot
MMBT2222LT3G
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MMBT2222ALT1G
Abstract: m1b marking mmbt222 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222ALT3 MMBT2222ALT3G MMBT2222LT1 MMBT2222LT3
Text: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package May be Available. The G−Suffix Denotes a COLLECTOR 3 Pb−Free Lead Finish MAXIMUM RATINGS Rating Symbol
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MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1
MMBT2222LT1
MMBT2222LT1/D
MMBT2222ALT1G
m1b marking
mmbt222
MMBT2222
MMBT2222A
MMBT2222ALT3
MMBT2222ALT3G
MMBT2222LT1
MMBT2222LT3
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m1b marking
Abstract: MMBT2222ALT1G 1N914 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 MMBT2222LT1G MMBT2222LT3 MMBT2222LT3G
Text: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Unit VCEO MMBT2222LT1
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MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1
MMBT2222LT1
MMBT2222LT1/D
m1b marking
MMBT2222ALT1G
1N914
MMBT2222
MMBT2222A
MMBT2222LT1
MMBT2222LT1G
MMBT2222LT3
MMBT2222LT3G
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MMBT2222ALT1G
Abstract: 1P SOT-23 1N914 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 MMBT2222LT1G MMBT2222LT3 MMBT2222LT3G
Text: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features •ăPb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collectorā-āEmitter Voltage Unit VCEO MMBT2222LT1
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MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1
MMBT2222LT1
MMBT2222LT1/D
MMBT2222ALT1G
1P SOT-23
1N914
MMBT2222
MMBT2222A
MMBT2222LT1
MMBT2222LT1G
MMBT2222LT3
MMBT2222LT3G
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843 SOT-23
Abstract: MMBT2222ALT1G
Text: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS Rating
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MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1
MMBT2222LT1
843 SOT-23
MMBT2222ALT1G
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MMBT2222ALT1G
Abstract: MMBT2222LT1G MMBT2222ALT1 m1b marking MMBT2222 MMBT2222ALT3 MMBT2222ALT3G MMBT2222LT1 MMBT2222LT3
Text: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS Rating
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MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1
MMBT2222LT1
MMBT2222LT1/D
MMBT2222ALT1G
MMBT2222LT1G
m1b marking
MMBT2222
MMBT2222ALT3
MMBT2222ALT3G
MMBT2222LT1
MMBT2222LT3
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TRANSISTOR 1P SOT23
Abstract: TRANSISTOR 1P marking 1p transistor sot23 1p TRANSISTOR 1p transistor sot23 MMBT2222A-1P MMBT2222ALT1 1P MMBT2222ALT1 1P NPN marking 1p sot23
Text: @vic MMBT2222ALT1 SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 TRANSISTOR NPN SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 1. 0 W (Tamb=25℃) Collector current 0.6 A ICM: Collector-base voltage 75 V V(BR)CBO: Operating and storage junction temperature range
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MMBT2222ALT1
OT-23
OT-23
150mA
500mA,
100MHz
MMBT2222A
TRANSISTOR 1P SOT23
TRANSISTOR 1P
marking 1p transistor sot23
1p TRANSISTOR
1p transistor sot23
MMBT2222A-1P
MMBT2222ALT1 1P
MMBT2222ALT1
1P NPN
marking 1p sot23
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1N914
Abstract: MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 2222a
Text: ON Semiconductort MMBT2222LT1 MMBT2222ALT1* General Purpose Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2222 2222A Unit Collector–Emitter Voltage VCEO 30 40 Vdc Collector–Base Voltage VCBO 60 75 Vdc Emitter–Base Voltage
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MMBT2222LT1
MMBT2222ALT1*
r14525
MMBT2222LT1/D
1N914
MMBT2222
MMBT2222A
MMBT2222ALT1
MMBT2222LT1
2222a
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907ALT1) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P
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OT-23
MMBT2222ALT1
OT-23
MMBT2907ALT1)
-55to
150mA
500mA
100MHz
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m1b marking
Abstract: MMBT2222 MMBT2222A 1N914 MMBT2222ALT1 MMBT2222LT1 2222A MOTOROLA
Text: MOTOROLA Order this document by MMBT2222LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1* COLLECTOR 3 *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2222 2222A Unit Collector – Emitter Voltage
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MMBT2222LT1/D
MMBT2222LT1
MMBT2222ALT1*
236AB)
MMBT2222LT1/D*
m1b marking
MMBT2222
MMBT2222A
1N914
MMBT2222ALT1
MMBT2222LT1
2222A MOTOROLA
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Untitled
Abstract: No abstract text available
Text: General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1 3 COLLECTOR 1 BASE 2 EMITTER MAXIMUM RATINGS Rating 3 Symbol 2222 2222A Unit Collector–Emitter Voltage V CEO 30 40 Vdc Collector–Base Voltage V CBO 60 75 Vdc Emitter–Base Voltage V 5.0
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MMBT2222LT1
MMBT2222ALT1
236AB)
De4-4714
MMBT2222LT1
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m1b marking
Abstract: 1N914 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 2222A MOTOROLA 1N914 SOT-23
Text: MOTOROLA Order this document by MMBT2222LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1* COLLECTOR 3 *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2222 2222A Unit Collector – Emitter Voltage
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MMBT2222LT1/D
MMBT2222LT1
MMBT2222ALT1*
236AB)
MMBT2222LT1/D*
m1b marking
1N914
MMBT2222
MMBT2222A
MMBT2222ALT1
MMBT2222LT1
2222A MOTOROLA
1N914 SOT-23
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transistor 2222a to-92
Abstract: MMBT2222ALT1 1P Marking code CS 1n914 SOD123 2305 SOT-23
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1* COLLECTOR 3 *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2222 2222A Unit Collector – Emitter Voltage VCEO 30 40 Vdc Collector – Base Voltage
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MMBT2222LT1
MMBT2222ALT1*
236AB)
transistor 2222a to-92
MMBT2222ALT1 1P
Marking code CS
1n914 SOD123
2305 SOT-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 SOT—23 TRANSISTOR( NPN ) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR 1.0 Power dissipation PCM : 0.3 W(Tamb=25℃) Collector current ICM : 0.6
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OT-23
MMBT2222ALT1
MMBT2222A
037TPY
950TPY
550REF
022REF
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MMBT2222A
Abstract: 2222A MMBT2222ALT1 m1b marking transistor 2222a data sheet 1N914 MMBT2222 MMBT2222LT1
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1 3 COLLECTOR 1 BASE 2 EMITTER MAXIMUM RATINGS Rating 3 Symbol 2222 2222A Unit Collector–Emitter Voltage V CEO 30 40 Vdc Collector–Base Voltage V CBO 60 75 Vdc Emitter–Base Voltage
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MMBT2222LT1
MMBT2222ALT1
236AB)
MMBT2222LT1
MMBT2222A
2222A
MMBT2222ALT1
m1b marking
transistor 2222a data sheet
1N914
MMBT2222
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1am surface mount diode
Abstract: c845 2GM sot-23 transistor G1 TRANSISTOR SOT 23 PNP 2F PNP SOT23 P1F marking AS3 SOT223 p2f sot-223 c845 TO 92 SOT-223 P1f
Text: ON Semiconductor Bipolar Transistors Bipolar Transistors Continued Plastic-Encapsulated Transistors (Continued) Plastic-Encapsulated Multiple Transistors Plastic-Encapsulated High-Voltage Amplifier Transistors (Case 29-04 Ñ TO-226AA (TO-92) Ñ PNP) hFE @ IC
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O-226AA
O-236AB
OT-23)
OT-223)
MMBTA42LT1
MMBT5551LT1
BSP52T1
1am surface mount diode
c845
2GM sot-23 transistor
G1 TRANSISTOR SOT 23 PNP
2F PNP SOT23
P1F marking
AS3 SOT223
p2f sot-223
c845 TO 92
SOT-223 P1f
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MMBT2222ALT1 1P
Abstract: transistor 2222a CURRENT GAIN MMBT2222 equivalent of transistor MMBT2222A m1b marking transistor 2222a npn 2222 transistor
Text: MMBT2222/ALT1 SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907/ALT1 * Collector Dissipation: Pc max =225mW Shandong Yiguang Electronic Joint stock Co., Ltd NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃
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MMBT2222/ALT1
MMBT2907/ALT1
225mW
OT-23
MMBT2222ALT1 1P
transistor 2222a CURRENT GAIN
MMBT2222
equivalent of transistor MMBT2222A
m1b marking
transistor 2222a
npn 2222 transistor
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mmbt2222A
Abstract: MMBT2222ALT1 marking QE
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBT2222LT1 MMBT2222ALT1* General Purpose T ran sisto rs NPN Silicon ’M otorola Preferred Device MAXIMUM RATINGS Symbol 2222 2222A Unit Collector-Emitter Voltage VCEO 30 40 Vdc Collector-Base Voltage v CBO 60 75 Vdc
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OCR Scan
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MMBT2222LT1
MMBT2222ALT1*
O-236AB)
b3tj75SS
MMBT2222ALT1
R307b
mmbt2222A
MMBT2222ALT1
marking QE
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T2222A
Abstract: BT2222ALT1 BT2222
Text: MAXIMUM RATINGS Symbol MMBT2222 MMBT2222A Unit C o lle ctor-E m itter Voltage VCEO 30 40 Vdc C ollector-Base Voltage v CBO 60 75 Vdc Em itter-Base Voltage v EBO 5.0 Rating C o lle ctor C u rrent — C o ntinuous Vdc 6,0 600 C MMBT2222LT1 MMBT2222ALT1* m A dc
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MMBT2222
MMBT2222A
MMBT2222LT1
MMBT2222ALT1*
OT-23
ITO-236AB)
T2222A
BT2222ALT1
BT2222
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Untitled
Abstract: No abstract text available
Text: M C C SOT-23 P lastic-E ncap sulate T ra n s is to rs ^ M M B T 2222A LT 1 TRANSISTO R NPN 1 .BASE 2.EMITTER 3.COLLECTOR FEATURES Power dissipation Pcm : 0.3 W (Tamb=25'C) C ollector current ICM: 0.6 A 2.4 C ollector-base voltage « 1-3 * V(BR)CBO: 75V Operating and storage junction temperature range
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OT-23
MMBT2222ALT1
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BC847BLT1
Abstract: BC847CLT1 bc846blt1 2W3A 1AM marking
Text: SOT-23 Devices Maximum die size 31 mil x 34 mil CASE 318-07 Bipolar Transistors General-Purpose Transistors The following tables are a listing of small-signal general-purpose transistors in the S O T-23 surface mount packages. These devices are intended for small-signal amplification for DC, audio, and lower RF frequencies. They also have applications as
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OT-23
MMBT8099LT1
BC846ALT1
BC846BLT1
BC817-16LT1
BC817-25LT1
BC817-40LT1
BCB47ALT1
BC847BLT1
BC847CLT1
2W3A
1AM marking
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