MMBT2222ALT1 1P Search Results

MMBT2222ALT1

Contextual Info: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage MMBT2222LT1 MMBT2222ALT1 VCEO Collector–Base Voltage MMBT2222LT1 MMBT2222ALT1

MMBT2222ALT1

Abstract: m1b marking 1N914 MMBT2222 MMBT2222A MMBT2222ALT3 MMBT2222LT1 MMBT2222LT3 1n914 sot
Contextual Info: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage MMBT2222LT1 MMBT2222ALT1 VCEO Collector–Base Voltage MMBT2222LT1 MMBT2222ALT1

1N914 SOT-23

Abstract: m1b marking 1N914 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222ALT3 MMBT2222LT1 MMBT2222LT3
Contextual Info: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage MMBT2222LT1 MMBT2222ALT1 VCEO Collector–Base Voltage MMBT2222LT1 MMBT2222ALT1

M1B marking

Abstract: 1N914 SOT-23 MMBT2222A 1n914 sot marking 1p sot23 1P SOT-23 marking code m1b MMBT2222ALT1G 1p sot MMBT2222LT3G
Contextual Info: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon Features •ăPb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collectorā-āEmitter Voltage Unit VCEO MMBT2222LT1 MMBT2222ALT1 Collectorā-āBase Voltage

MMBT2222ALT1G

Abstract: m1b marking mmbt222 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222ALT3 MMBT2222ALT3G MMBT2222LT1 MMBT2222LT3
Contextual Info: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package May be Available. The G−Suffix Denotes a COLLECTOR 3 Pb−Free Lead Finish MAXIMUM RATINGS Rating Symbol

m1b marking

Abstract: MMBT2222ALT1G 1N914 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 MMBT2222LT1G MMBT2222LT3 MMBT2222LT3G
Contextual Info: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Unit VCEO MMBT2222LT1

MMBT2222ALT1G

Abstract: 1P SOT-23 1N914 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 MMBT2222LT1G MMBT2222LT3 MMBT2222LT3G
Contextual Info: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features •ăPb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collectorā-āEmitter Voltage Unit VCEO MMBT2222LT1

843 SOT-23

Abstract: MMBT2222ALT1G
Contextual Info: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS Rating

MMBT2222ALT1G

Abstract: MMBT2222LT1G MMBT2222ALT1 m1b marking MMBT2222 MMBT2222ALT3 MMBT2222ALT3G MMBT2222LT1 MMBT2222LT3
Contextual Info: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS Rating

TRANSISTOR 1P SOT23

Abstract: TRANSISTOR 1P marking 1p transistor sot23 1p TRANSISTOR 1p transistor sot23 MMBT2222A-1P MMBT2222ALT1 1P MMBT2222ALT1 1P NPN marking 1p sot23
Contextual Info: @vic MMBT2222ALT1 SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 TRANSISTOR NPN SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 1. 0 W (Tamb=25℃) Collector current 0.6 A ICM: Collector-base voltage 75 V V(BR)CBO: Operating and storage junction temperature range

1N914

Abstract: MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 2222a
Contextual Info: ON Semiconductort MMBT2222LT1 MMBT2222ALT1* General Purpose Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2222 2222A Unit Collector–Emitter Voltage VCEO 30 40 Vdc Collector–Base Voltage VCBO 60 75 Vdc Emitter–Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907ALT1) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

m1b marking

Abstract: MMBT2222 MMBT2222A 1N914 MMBT2222ALT1 MMBT2222LT1 2222A MOTOROLA
Contextual Info: MOTOROLA Order this document by MMBT2222LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1* COLLECTOR 3 *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2222 2222A Unit Collector – Emitter Voltage

Contextual Info: General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1 3 COLLECTOR 1 BASE 2 EMITTER MAXIMUM RATINGS Rating 3 Symbol 2222 2222A Unit Collector–Emitter Voltage V CEO 30 40 Vdc Collector–Base Voltage V CBO 60 75 Vdc Emitter–Base Voltage V 5.0

m1b marking

Abstract: 1N914 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 2222A MOTOROLA 1N914 SOT-23
Contextual Info: MOTOROLA Order this document by MMBT2222LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1* COLLECTOR 3 *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2222 2222A Unit Collector – Emitter Voltage

mmbt2222A

Abstract: MMBT2222ALT1 marking QE
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBT2222LT1 MMBT2222ALT1* General Purpose T ran sisto rs NPN Silicon ’M otorola Preferred Device MAXIMUM RATINGS Symbol 2222 2222A Unit Collector-Emitter Voltage VCEO 30 40 Vdc Collector-Base Voltage v CBO 60 75 Vdc

transistor 2222a to-92

Abstract: MMBT2222ALT1 1P Marking code CS 1n914 SOD123 2305 SOT-23
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1* COLLECTOR 3 *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2222 2222A Unit Collector – Emitter Voltage VCEO 30 40 Vdc Collector – Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 SOT—23 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER FEATURES 3. COLLECTOR １．０ Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : 0.6

MMBT2222A

Abstract: 2222A MMBT2222ALT1 m1b marking transistor 2222a data sheet 1N914 MMBT2222 MMBT2222LT1
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1 3 COLLECTOR 1 BASE 2 EMITTER MAXIMUM RATINGS Rating 3 Symbol 2222 2222A Unit Collector–Emitter Voltage V CEO 30 40 Vdc Collector–Base Voltage V CBO 60 75 Vdc Emitter–Base Voltage

T2222A

Abstract: BT2222ALT1 BT2222
Contextual Info: MAXIMUM RATINGS Symbol MMBT2222 MMBT2222A Unit C o lle ctor-E m itter Voltage VCEO 30 40 Vdc C ollector-Base Voltage v CBO 60 75 Vdc Em itter-Base Voltage v EBO 5.0 Rating C o lle ctor C u rrent — C o ntinuous Vdc 6,0 600 C MMBT2222LT1 MMBT2222ALT1* m A dc

Contextual Info: M C C SOT-23 P lastic-E ncap sulate T ra n s is to rs ^ M M B T 2222A LT 1 TRANSISTO R NPN 1 .BASE 2.EMITTER 3.COLLECTOR FEATURES Power dissipation Pcm : 0.3 W (Tamb=25'C) C ollector current ICM: 0.6 A 2.4 C ollector-base voltage « 1-3 * V(BR)CBO: 75V Operating and storage junction temperature range

BC847BLT1

Abstract: BC847CLT1 bc846blt1 2W3A 1AM marking
Contextual Info: SOT-23 Devices Maximum die size 31 mil x 34 mil CASE 318-07 Bipolar Transistors General-Purpose Transistors The following tables are a listing of small-signal general-purpose transistors in the S O T-23 surface mount packages. These devices are intended for small-signal amplification for DC, audio, and lower RF frequencies. They also have applications as

1am surface mount diode

Abstract: c845 2GM sot-23 transistor G1 TRANSISTOR SOT 23 PNP 2F PNP SOT23 P1F marking AS3 SOT223 p2f sot-223 c845 TO 92 SOT-223 P1f
Contextual Info: ON Semiconductor Bipolar Transistors Bipolar Transistors Continued Plastic-Encapsulated Transistors (Continued) Plastic-Encapsulated Multiple Transistors Plastic-Encapsulated High-Voltage Amplifier Transistors (Case 29-04 Ñ TO-226AA (TO-92) Ñ PNP) hFE @ IC

MMBT2222ALT1 1P

Abstract: transistor 2222a CURRENT GAIN MMBT2222 equivalent of transistor MMBT2222A m1b marking transistor 2222a npn 2222 transistor
Contextual Info: MMBT2222/ALT1 SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907/ALT1 * Collector Dissipation: Pc max =225mW Shandong Yiguang Electronic Joint stock Co., Ltd NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃