MMBT2484 Search Results

marking 8b sot-23

Abstract: MMBT2484LT1 transistor 210
Contextual Info: MOTOROLA Order this document by MMBT2484LT1/D SEMICONDUCTOR TECHNICAL DATA Low Noise Transistor MMBT2484LT1 COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 60 Vdc Collector – Base Voltage

MMBT2484LT1G

Contextual Info: MMBT2484LT1G Low Noise Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 60 Vdc Collector −Base Voltage

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistor NPN Silicon MMBT2484LT1 colle3ctor M AXIMUM RATINGS Rating Symbol Value Collector- Emitter Voltage v CEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc v EBO 6.0 Vdc 'c 50 mAdc Symbol Max Unit Pd 225 mW

Contextual Info: MMBT2484 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR -SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistor MMBT2484LT1 COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 60 Vdc Collector – Base Voltage VCBO 60 Vdc Emitter – Base Voltage

PN2484

Abstract: 2n5088 transistor 2N5088 equivalent npn general purpose high voltage amplifier 2N5088 MMBT2484
Contextual Info: PN2484 MMBT2484 C E C BE TO-92 SOT-23 B Mark: 1U NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µ to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.

Contextual Info: Low Noise Transistor NPN Silicon MMBT2484LT1 3 COLLECTOR 1 BASE 3 1 2 EMITTER 2 MAXIMUM RATINGS Rating CASE 318–08, STYLE 6 Symbol Value Unit Collector–Emitter Voltage V CEO 60 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage V 6.0 Vdc

45Vdc

Abstract: MMBT2484LT1
Contextual Info: LESHAN RADIO COMPANY, LTD. Low Noise Transistor NPN Silicon MMBT2484LT1 3 COLLECTOR 1 BASE 3 1 2 EMITTER 2 MAXIMUM RATINGS Rating CASE 318–08, STYLE 6 Symbol Value Unit Collector–Emitter Voltage V CEO 60 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage

Contextual Info: SAMSUNG ELECTR ONI CS INC MMBT2484 42E D GH 7 ^ b 4 1 4 S 000=1035 T m SM GK NPN EPITAXIAL SILICON TRANSISTOR •> " T ' Z l - O C i LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage

MMBT2484LT1

Abstract: MMBT2484LT1G
Contextual Info: MMBT2484LT1 Low Noise Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 60 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage

MMBT2484

Abstract: PN2484 2N5088 CBVK741B019 F63TNR PN2222N
Contextual Info: PN2484 / MMBT2484 PN2484 MMBT2484 C E C B TO-92 SOT-23 E B Mark: 1U NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µ to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.

MMBT2484LT1

Contextual Info: ON Semiconductort Low Noise Transistor MMBT2484LT1 NPN Silicon 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO 60 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0 Vdc IC 100 mAdc Symbol Max Unit PD 225

2N5088

Abstract: CBVK741B019 F63TNR MMBT2484 PN2222N PN2484
Contextual Info: PN2484 / MMBT2484 PN2484 MMBT2484 C E C B TO-92 SOT-23 E B Mark: 1U NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µ to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.

Contextual Info: PN2484 Discrete POW ER & Signal Technologies SEMICONDUCTOR i / MMBT2484 PN2484 MMBT2484 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am p lifie r a p p lica tio ns at co lle cto r cu rre n ts from 1 j, to 50 mA.

MMBT2484LT1

Contextual Info: ON Semiconductort Low Noise Transistor MMBT2484LT1 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 60 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0 Vdc IC 50 mAdc Symbol Max Unit PD 225 mW 1.8

sot-23 Marking G1

Abstract: marking 1U sot-23 MMBC1653N4 MMBC1654N5 N3 SOT-23 MMBC1653 MMBC1653N2 MMBC1653N3 G1 marking sot23 sot23 MARKING 1l
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued Low-Noise SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN NF dB Device MMBT5088 MMBT5089 MMBT2484 MMBT6428 MMBT6429 fT hfe Max @'C (mA) Min (MHz) Marking (Typ) Vb R(CEO) Min 1Q 1R 1U 1K 1L 1.0 1.0

Contextual Info: ON Semiconductort Low Noise Transistor MMBT2484LT1 NPN Silicon 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector −Emitter Voltage VCEO 60 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage VEBO 6.0 Vdc IC 100 mAdc Collector Current — Continuous

Contextual Info: ON Semiconductort Low Noise Transistor MMBT2484LT1 NPN Silicon 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO 60 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0 Vdc IC 100 mAdc Symbol Max Unit PD 225

Contextual Info: ^zmi-donductoi ^Products., Line. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. PN2484 MMBT2484 TO-92 SOT-23 B Mark:1U Absolute Maximum Ratings* TA = 25PC unless otherwise noted Parameter Symbol

MMBT6428

Abstract: mmbth10 KST2484 KST5086 KST5088 KST5089 KST6428 MMBT2484 MMBT5086 MMBT5088
Contextual Info: Surface Mount Low Noise Transistors Part No., Marking Code and Polarity NPN hFE NF Max. Condition Frequency PNP dB MMBT6428 KST6428 MMBT6429 MMBT2484 KST2484 MMBT5088 KST5088 MMBT5089 KST5089 1K 1K 1L 1U 1U 1Q 1Q 1R 1R MMBT5086 KST5086 MMBT5087 TMPT5087

MMBT2484LT1

Contextual Info: MOTOROLA Order this document by MMBT2484LT1/D SEMICONDUCTOR TECHNICAL DATA Low Noise Transistor MMBT2484LT1 COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 60 Vdc Collector – Base Voltage

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

CTR21

Abstract: TXM RX-3 ksp13 equivalent Si3019 R3841 si3056 daa si3056 daa interface Circuit PWM ATX power supply Si305x Si3010
Contextual Info: Si3056 Si 3 0 1 8 / 1 9 /10 GLOBAL SERIAL INTERFACE DIRECT ACCESS ARRANGEMENT Features Complete DAA includes the following: Programmable line interface Pulse dialing support Overload detection 3.3 V power supply Direct interface to DSPs Serial interface control for up to eight

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty