MMBT2907 2F Search Results

MMBT2907A MMBT2907

Contextual Info: MMBT2907 / MMBT2907A MMBT2907 / MMBT2907A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage PNP PNP Version 2012-01-11 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse

MMBT2907A-2F

Abstract: transistor 2F to-236 Application of MMBT2907A MMBT2907 ON MMBT2907 MMBT2222 MMBT2222A MMBT2907A mmbt2907 2f MMBT2907 die
Contextual Info: MMBT2907 / MMBT2907A MMBT2907 / MMBT2907A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage PNP PNP Version 2006-05-15 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse

Contextual Info: MMBT2907 / MMBT2907A MMBT2907 / MMBT2907A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage PNP PNP Version 2006-05-15 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case Kunststoffgehäuse

MMBT2907

Abstract: bt2907a MMBT2907A
Contextual Info: M A X IM U M RATINGS Symbol Rating MMBT2907 MMBT2907Í -4 0 -6 0 Unit v CEO Collector-Base Voltage v CBO Emitter-Base Voltage v EBO -5 .0 Vdc ic -6 0 0 mAdc Collector Current — Continuous 60 MMBT2907LT1 MMBT2907ALT1* Vdc Collector-Emitter Voltage Vdc CASE 318-07, STYLE 6

MMBT2907

Contextual Info: MO T O R O L A SC XSTRS/R F b&E b3fc>7H54 O O R R Q R b 3> 024 • M A X IM U M RATINGS Rating Symbol MMBT2907 MMBT2907/ v CEO Collector-Base Voltage VCBO Em itter-Base Voltage V e BO - 5 .0 Vdc <c -6 0 0 m Adc C ollector C urrent — C ontinuous -4 0 Unit

2907 TRANSISTOR PNP

Abstract: 2907a TRANSISTOR PNP MMBT2222 MMBT2907 MMBT2907 2F
Contextual Info: MMBT2907/ALT1 SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR * Complement to MMBT2222/ALT1 * Collector Dissipation: Pc max =225mW Shandong Yiguang Electronic Joint stock Co., Ltd PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃

mmbt2709

Abstract: MMBT2709A MMBT27 MMBT2907A-2F MMBT2222 MMBT2222A MMBT2907 MMBT2907A MMBT2907 2F
Contextual Info: MMBT2907, MMBT2907A PNP Switching Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Version 2004-05-04 Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1

Contextual Info: MMBT2907 MMBT2907A PNP General Purpose Transistors COLLECTOR 3 3 1 1 BASE 2 SOT-23 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC 2907 -40 2907A -60

Contextual Info: MMBT2907 MMBT2907A PNP General Purpose Transistors COLLECTOR 3 3 1 1 BASE 2 SOT-23 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC 2907 -40 2907A -60

2907 pnp transistor

Contextual Info: WILLAS FM120-M+ THRU MMBT2907 A LT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY Transistor BARRIER RECTIFIERS -20V- 200V General Purpose Pb Free Product SOD-123+ PACKAGE Package outline Features PNP Silicon process design, excellent power dissipation offers • Batch

MMBT2907

Abstract: MMBT2907A-2F maximum current rating of 2907A pnp transistor MMBT2907A sot-23 15V vebo pnp mmbt2907 2f mmbt2907 2f sot-23
Contextual Info: MMBT2907 MMBT2907A COLLECTOR 3 PNP General Purpose Transistors 3 1 1 BASE 2 SOT-23 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC 2907 -40 2907A -60

Contextual Info: MMBT2907 MMBT2907A COLLECTOR 3 PNP General Purpose Transistors 3 * “G” Lead Pb -Free 1 1 BASE 2 SOT-23 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO

MBT2907A

Abstract: MBT2907 MMBT2907A MMBT2907
Contextual Info: M A X IM U M R A T IN G S 1 o o MMBT2907 MMBT2907A 1 Symbol Rating Unit v CEO Collector-Base Voltage v CBO Em itter-Base Voltage Vebo - 5.0 Vdc ic - 600 m Adc Collector C urrent — C ontinuous MMBT2907LT1 MMBT2907ALT1* Vdc C o lle ctor-E m itter Voltage Vdc

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose T ransistors MMBT2907LT1 MMBT2907ALT1* PNP Silicon ‘Motorola Preferred Device MAXIMUM RATINGS Symbol 2907 2907A Unit Collector- Emitter Voltage VCEO -40 -60 Vdc Collector-Base Voltage v CBO Emitter-Base Voltage

MMBT2907A

Abstract: 1N916 MMBT2222A MMBT2907 maximum current rating of 2907A pnp transistor 2907a TRANSISTOR PNP 2907 TRANSISTOR
Contextual Info: MMBT2907A PNP Silicon Elektronische Bauelemente RoHS Compliant Product FEATURES • · · General Purpose Transistor A suffix of "-C" specifies halogen & lead-free Epitaxial Planar Die Construction Complementary NPN Type Available MMBT2222A A COLLECTOR Ideal for Medium Power Amplification and

TRANSISTOR A30

Contextual Info: MMBT2907A PNP Silicon Elektronische Bauelemente RoHS Compliant Product FEATURES • · · General Purpose Transistor A suffix of "-C" specifies halogen & lead-free Epitaxial Planar Die Construction Complementary NPN Type Available MMBT2222A A L COLLECTOR

Contextual Info: General Purpose Transistor PNP Silicon 3 COLLECTOR MMBT2907LT1 MMBT2907ALT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value 2907 2907A V CEO Collector–Base Voltage V CBO –60 Vdc Emitter–Base Voltage V EBO –5.0 Vdc –600 mAdc IC –60 Unit Collector–Emitter Voltage

2N3903 MOTOROLA SOT-23

Abstract: MPS3640 MMBT2907A MMBT2907 MMBT3903 mmbt3904 motorola 2N3903 MMBT2907 MMBT2907A MMBT3640 MMBT3904
Contextual Info: MOTOROLA 6367254 SC -CXSTRS/R MOTOROLA TL FI SC XSTRS/R i DE I b 3 t i 7 2 S 4 F 96D 00flE03b 82036. T D - M A X I M U M R ATINGS Rating Symbol MPS2907 40 MPS2907A 60 Unit VcEO VcBO Emitter-Base Voltage Ve b o 5.0 Vdc lc 600 mAdc Collector Current — Continuous

MMBT2907 2F

Contextual Info: M OTO RO LA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon M M B T2 9 0 7 LT1 M M B T 2 9 0 7 A L T 1* C0LLE CT0R 3 'M o to ro la Preferred D evice MAXIM UM RATINGS Rating Symbol 2907 2907A Unit C ollector-E m itter Voltage v CEO -4 0

2907 TRANSISTOR PNP

Abstract: MMBT2907 MMBT2907 ON 1N916 MMBT2907A MMBT2907ALT1 MMBT2907LT1 2907a TRANSISTOR PNP MMBT2907A MMBT2907
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon 3 COLLECTOR MMBT2907LT1 MMBT2907ALT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value 2907 2907A V CEO Collector–Base Voltage V CBO –60 Vdc Emitter–Base Voltage V EBO –5.0 Vdc –600

T2907A

Contextual Info: M O TO R O LA Order this document by MMBT2907LT1/D SEMICONDUCTOR TECHNICAL DATA M M B T 2907L T 1 M M B T2907A LT1* General Purpose Transistors PNP Silicon C0LLECT0R * Motorola Preferred Device % 2 EMITTER MAXIMUM RATINGS Rating Symbol 2907 2907A Unit Collector-Emitter Voltage

1N916

Abstract: MMBT2907 MMBT2907A MMBT2907ALT1 MMBT2907LT1
Contextual Info: MOTOROLA Order this document by MMBT2907LT1/D SEMICONDUCTOR TECHNICAL DATA MMBT2907LT1 MMBT2907ALT1* General Purpose Transistors COLLECTOR 3 PNP Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2907 2907A Unit Collector – Emitter Voltage

1N916

Abstract: MMBT2907 MMBT2907A MMBT2907ALT1 MMBT2907LT1
Contextual Info: MOTOROLA Order this document by MMBT2907LT1/D SEMICONDUCTOR TECHNICAL DATA MMBT2907LT1 MMBT2907ALT1* General Purpose Transistors COLLECTOR 3 PNP Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2907 2907A Unit Collector – Emitter Voltage

Contextual Info: WILLAS FM120-M+ MMBT2907ADW1T1 THRU Transistor Dual General 1.0A SURFACE MOUNT Purpose SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.