MMBT3904LT1 1AM Search Results

1AM sot 23

Abstract: 1am surface mount diode 1N916 MMBT3904LT1 motorola MMBT3904LT1
Contextual Info: MOTOROLA Order this document by MMBT3904LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon MMBT3904LT1 COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage

1N916

Abstract: MMBT3904LT1 transistor marking 1am
Contextual Info: MOTOROLA Order this document by MMBT3904LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon MMBT3904LT1 COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage

1AM marking transistor

Abstract: transistor 1am transistor marking 1am MARKING 1AM sot23 marking 1AM MMBT3904LT1 1AM 1AM marking MMBT3904LT1 1AM transistor sot-23 Marking 1am
Contextual Info: @vic MMBT3904LT1 SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.2 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range

transistor marking 1am

Contextual Info: ON Semiconductort General Purpose Transistor MMBT3904LT1 NPN Silicon ON Semiconductor Preferred Device 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0

1N916

Abstract: MMBT3904LT1
Contextual Info: ON Semiconductort General Purpose Transistor MMBT3904LT1 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0 Vdc

mbt3904lt1

Abstract: BT3904LT1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor MMBT3904LT1 NPN Silicon M otorola Preferred Device MAXIMUM RATINGS Symbol Value Unit Collector- Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage Ve b o 6.0

MMBT3904LT3G

Abstract: 1N916 MMBT3904LT1 MMBT3904LT1G MMBT3904LT3 1AM 6 marking code 1AM
Contextual Info: MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage

MMBT3904LT1G

Abstract: 1AMM MMBT3904LT3G 1N916 MMBT3904LT1 MMBT3904LT3 MMBT3904LT1 1AM transistor 1am
Contextual Info: MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features •ăPb-Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collectorā-āEmitter Voltage VCEO 40 Vdc Collectorā-āBase Voltage VCBO 60 Vdc Emitterā-āBase Voltage

MMBT3904LT3G

Abstract: MMBT3904LT1 1AM 1N916 MMBT3904LT1 MMBT3904LT1G MMBT3904LT3
Contextual Info: MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage

mbt3904lt1

Abstract: MBT3904L marking code 1AM MBT3904LT
Contextual Info: WILLAS FM120-M+ MMBT3904LT1 THRU General Purpose FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKYTransistor BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse

1N916

Abstract: MMBT3904LT1
Contextual Info: ON Semiconductort General Purpose Transistor MMBT3904LT1 NPN Silicon ON Semiconductor Preferred Device 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0

marking code 1AM

Abstract: 1am transistor MMBT3904LT3G equivalent of 1AM transistor marking 1am
Contextual Info: MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage

IC 556 DATASHEET

Abstract: 1AM sot 23 1AM transistor 1am2 transistor marking 1am transistor 1am 1AM marking transistor equivalent of 1AM MMBT3904LT1G datasheet 1am
Contextual Info: MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features • Pb−Free Package May be Available. The G−Suffix Denotes a http://onsemi.com Pb−Free Lead Finish COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage

MMBT3904LT1G

Abstract: MMBT3904LT3G 1N916 MMBT3904LT1 MMBT3904LT3 sot-23 Marking 1am sot 23 marking code 1AM SOA SOT23
Contextual Info: MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features •ăPb-Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collectorā-āEmitter Voltage VCEO 40 Vdc Collectorā-āBase Voltage VCBO 60 Vdc Emitterā-āBase Voltage

Contextual Info: SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.2 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range

O116

Abstract: 1AM marking transistor MMBT3904LT1 1AM 1N916 MMBT3904LT1
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon MMBT3904LT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage

Contextual Info: General Purpose Transistor NPN Silicon MMBT3904LT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage V EBO 6.0 Vdc 200 mAdc Collector Current — Continuous

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.2 A ICM: Collector-base voltage

Contextual Info: General Purpose Transistor NPN Silicon MMBT3904LT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit 2 CASE 318–08, STYLE 6 SOT–23 TO–236AB Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBT3904LT1 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER 3. COLLECTOR W（Tamb=25℃） ２．４ １．３ Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃

1am transistor

Abstract: T3904L equivalent of transistor D 2331 bt39
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon MMBT3904LT1 COLLECTOR Motorola Preferred Device 1 BASE 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit C o lle c to r-E m itte r Voltage v CEO 40 Vdc C o lle c to r-B a s e Voltage

BT3904

Abstract: 2N3903 MOTOROLA SOT-23 BT3904LT1
Contextual Info: M A X IM U M RATINGS Rating Symbol Value Collector-Emitter Voltage v CEO 40 Vdc Collector-Base Voltage v CBO 60 Vdc Emitter-Base Voltage v EBO 6.0 Vdc 'c 200 mAdc Symbol Max Unit Pd 225 mW 1.8 mW/°C r »j a 656 ° c /w pd 300 mW 2.4 m w rc r 0JA 417 ° c /w

Contextual Info: M A X IM U M R A T IN G S Rating Symbol Value Unit C o lle c to r -E m itte r V o lta g e v CEO 40 Vdc C o lle c to r-B a s e V o lta g e VCBO 60 Vdc v EBO 6.0 Vdc 'c 200 m Adc Symbol M ax Unit Pd 225 mW 1.8 m W :C RfiJA 556 °CW PD 300 mW 2.4 m W =C r *J A

Contextual Info: DONGGUAN FORWARD SEMICONDUCTOR CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1TRANSISTOR NPN FEATURES Power dissipation PCM: 0.2 Collector current ICM: 0.2 W(Tamb=25℃) A Collector-base voltage V(BR)CBO: V 60 Operating and storage junction temperature range