MMBT3906G Search Results

1N916

Abstract: MMBT3906GH
Contextual Info: Zowie Technology Corporation General Purpose Transistor PNP Silicon Lead free product Halogen-free type COLLECTOR 3 3 BASE 1 1 MMBT3906GH 2 2 EMITTER SOT-23 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCBO

MMBT3906-2A

Abstract: 1N916 MMBT3906 MMBT3906G
Contextual Info: Zowie Technology Corporation General Purpose Transistor PNP Silicon Lead free product COLLECTOR 3 3 MMBT3906G BASE 1 1 2 2 EMITTER SOT-23 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage

MMBT3906G-AE3-R

Abstract: VCE30V MMBT3904 MMBT3906 MMBT3906-AE3-R MMBT3906-AL3-R MMBT3906G MMBT3906L MMBT3906L-AE3-R marking 2A
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES „ * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3904 Lead-free: MMBT3906L Halogen-free: MMBT3906G

Contextual Info: Zowie Technology Corporation General Purpose Transistor PNP Silicon Lead free product COLLECTOR 3 3 MMBT3906G BASE 1 1 2 2 EMITTER SOT-23 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage

MMBT3906 vishay

Contextual Info: MMBT3906 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor MMBT3904 is recommended. • This transistor is also available in the TO-92 case

Contextual Info: General Purpose Transistor NPN MMBT3904-G (RoHS Device) NPN Silicon Type Features Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906-G) Ideal for Medium Power Amplification and switching SOT-23 .122 (3.1) .110 (2.8) Circuit Schematic

TRANSISTOR SMD MARKING CODE p1

Abstract: TRANSISTOR SMD MARKING CODE 2A A O TRANSISTOR SMD MARKING CODE Transistor 03 smd smd transistor MARKING 2A smd transistor code 2a TRANSISTOR SMD MARKING CODE MARKING SMD TRANSISTOR W1 TRANSISTOR SMD MARKING M Y 2A transistor smd SOT-23
Contextual Info: General Purpose Transistor SMD Diodes Specialist MMBT3906-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction 0.119 (3.00) 0.110 (2.80) -As complementary type, the NPN 3 transistor MMBT3904-G is recommended 0.056 (1.40) 0.047 (1.20) 1 2

smd 2N3906

Abstract: 2N3904 TRANSISTOR SMD 2N3906 SMD
Contextual Info: General Purpose Transistor SMD Diodes Specialist 2N3906-G PNP RoHS Device Features TO-92 -PNP silicon epitaxial planar transistor for 0.185(4.70) 0.173(4.40) 0. 135 ( 3. 43) M i n. 0.185(4.70) 0.169(4.30) 2N3904-G is recommended. 0.055 (1. 14) 0. 0 20( 0 .51 )

smd transistor JE

Abstract: 1c smd transistor j 6 smd transistor smd transistor b2 smd transistor LL smd transistor LL sot23 SMD Transistor 1c SMD SOT23 b21 QW-BTR02 transistor pnp 20v, 2.5a smd
Contextual Info: COAtCHII’ General Purpose Transistor S M D D io d e s S p e c ia lis t MMBT3906-G p n p RoHS Device Features S O T -2 3 -Epitaxial p la n a rd ie construction - A s c o m p l e m e n t a r y t y p e, t h e N P N , 0.119 (3.00) 0.110 (2.80) t r a n s i s t o r M M B T 3 9 0 4 - G is r e c o m m e n d e d

2A marking MMBT3906

Abstract: MARKING 2A MMBT3906-AE3-R MMBT3906G MMBT3906L MMBT3906L-AE3-R MMBT3904 MMBT3906 MMBT3906-AL3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION „ 3 FEATURES 1 2 SOT-23 * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PC MAX =350mW * Complementary to MMBT3904 3 2 1 SOT-323 Lead-free: MMBT3906L Halogen-free:MMBT3906G

MMBT3906-G

Contextual Info: General Purpose Transistor MMBT3906-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction 0.119 (3.00) 0.110 (2.80) -As complementary type, the NPN 3 transistor MMBT3904-G is recommended 0.056 (1.40) 0.047 (1.20) 1 Collector 3 2 0.079 (2.00)

2N3906-G

Contextual Info: General Purpose Transistor 2N3906-G PNP RoHS Device Features TO-92 -PNP silicon epitaxial planar transistor for 0.185(4.70) 0.173(4.40) 0. 135 ( 3. 43) M i n. 0.185(4.70) 0.169(4.30) 2N3904-G is recommended. 0.055 (1. 14) 0. 0 20( 0 .51 ) 0. 0 14( 0. 36)

Contextual Info: General Purpose Transistor 2N3906-G RoHS Device PNP Features TO-92 -PNP silicon epitaxial planar transistor for switching and amplifier application. 0.185(4.70) 0.173(4.40) 0. 135 ( 3. 43) M i n. -This transistor is available in the SOT-23 0.055 (1. 14)

Contextual Info: General Purpose Transistor MMBT3906-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction 0.119 (3.00) 0.110 (2.80) -As complementary type, the NPN 3 transistor MMBT3904-G is recommended 0.056 (1.40) 0.047 (1.20) 1 Collector 3 0.079 (2.00)

MMBT3906 UTC

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES „ * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3904 „ ORDERING INFORMATION Ordering Number Lead Free

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES  * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3904  ORDERING INFORMATION Ordering Number Note:

MMBT3906 vishay

Contextual Info: MMBT3906 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features C 3 2 • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor MMBT3904 is recommended. • This transistor is also available in the TO-92 case