MMBTA65 Search Results

MPSA65

Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
Contextual Info: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

MPSA65

Abstract: MMBTA65 MPSA64 PZTA65
Contextual Info: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

BTA65

Abstract: PSA65
Contextual Info: E E M C O N O U C TO R m MPSA65 MMBTA65 PZTA65 PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61. See M PSA64 for characteristics. Absolute Maximum RâtinÇjS

MPSA65

Abstract: MPS-A65 MMBTA65 MPSA64 PZTA65
Contextual Info: MPSA65 MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.

Contextual Info: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

FAIRCHILD SOT-223 MARK

Abstract: MMBTA65 MPSA64 MPSA65 PZTA65
Contextual Info: fv* '€2 CZ> T O R MMBTA65 SOT-23 PZTA65 B / PZTA65 TO-92 / MMBTA65 MPSA65 SOT-223 M a rk : 2 W PNP Darlington Transistor T h is d e v ic e is d e s ig n e d fo r a p p lic a tio n s re q u irin g e x tre m e ly high c u rre n t g a in at c u rre n ts to 80 0 m A . S o u rc e d fro m P roce ss 61.

Contextual Info: S E IV ZS’NES wJ CZ>T O R • MPSA65 MMBTA65 PZTA65 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings

Contextual Info: M AXIM U M RATINGS Symbol MMBTA65 MMBTA56 VCEO -6 0 -8 0 Vdc Collector-Base Voltage v CBO -6 0 -8 0 Vdc Emitter-Base Voltage v EBO -4 .0 Vdc 'c - 500 m Adc Rating Collector-Emitter Voltage Collector Current — Continuous Unit MMBTA55LT1 MMBTA56LT1* CASE 318-07, STYLE 6

MMBTA5551

Abstract: EM401 MMBTA6520 MMBFJ174 MMBTA5401 j y w sot23 MMBTH918 smd diode 01C sot-23/BC327 SOT yo
Contextual Info: edi ELECTRONIC DEVICES, INC. 21 GRAY O AK S AVENUE • Y O NK ERS, N E W YORK 10710 3 1 4 - 9 6 5 - 4 - 4 0 0 • 1- 5 0 0 - 6"7B - O B 2 B . FA X 9 1 4 - 9 6 5 - 5 5 3 1 E -M A IL : E D I - S A L E S @ I N T E R N E T M C I .C O M SURFACE MOUNT DEVICES TRANSISTORS

Contextual Info: C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

ssot-6

Abstract: MMBT pnp FJ sot23 sot 223 fairchild
Contextual Info: Discrete Power and Signal Technologies Fairchild S em iconductor Selection Guides Surface Mount Bipolar Transistors G eneral Purpose A m p lifie rs and S w itches Part lc mA BV Min Number - Min M ax P ackage mA NPN I MMBT100 45 500 100 MMBT3904 40 200 ܧ