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    MMIC AMPLIFIER MT Search Results

    MMIC AMPLIFIER MT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TA75W01FU
    Toshiba Electronic Devices & Storage Corporation Operational Amplifier, Bipolar (358) type Dual Op-Amp, 3V to 12V, SOT-505 Visit Toshiba Electronic Devices & Storage Corporation
    TC75S55F
    Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.8V to 7.0V, IDD=10μA, SOT-25/SOT-353 Visit Toshiba Electronic Devices & Storage Corporation
    TC75S54F
    Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.8V to 7.0V, IDD=100μA, SOT-25/SOT-353 Visit Toshiba Electronic Devices & Storage Corporation
    TC75S51F
    Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 7.0V, IDD=60μA, SOT-25/SOT-353 Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F
    Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation

    MMIC AMPLIFIER MT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    current gain diagram

    Abstract: vSP8 NJG1308F
    Contextual Info: AMPLIFIERS Amplifier 11 DRIVER AMPLIFIER GaAs DRIVER-AMPLIFIER GaAs MMIC NJG1307R NJG1308F DATA SHEET DATA SHEET • GENERAL DESCRIPTION ■ GENERAL DESCRIPTION NJG1307R is a GaAs MMIC designed mainly for driver amplifier of Cellular Phone. This is an amplifier, which has high gain of 33dB and variable


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    NJG1307R NJG1308F NJG1308F 938MHz 1441MHz 1900MHz 11dBm 10dBm current gain diagram vSP8 PDF

    RAYTHEON

    Abstract: RMLA3565-58 RO4003 2001 E.F. JOHNSON
    Contextual Info: RMLA3565-58 Wideband Low Noise MMIC Amplifier PRELIMINARY INFORMATION Description Features The Raytheon RMLA3565-58 is a single bias wideband low noise MMIC amplifier that meets the following specifications over the 3.5 - 6.5 GHz frequency range. The MMIC requires no external matching circuits no


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    RMLA3565-58 RMLA3565-58 RAYTHEON RO4003 2001 E.F. JOHNSON PDF

    1308F

    Abstract: GRM39 HK1608 NJG1308F
    Contextual Info: NJG1308F DRIVER-AMPLIFIER GaAs MMIC QGENERAL DESCRIPTION NJG1308F is a GaAs MMIC Driver-Amplifier for 800MHz1.9 GHz band of Cellular phone System. It features a low current consumption and a high gain. Small MTP6 package is adopted. QPACKAGE OUTLINE NJG1308F


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    NJG1308F NJG1308F 800MHz1 938MHz 1441MHz 1900MHz 12dBm 11dBm 1308F GRM39 HK1608 PDF

    650-106

    Abstract: 1308F GRM39 HK1608 NJG1308F
    Contextual Info: NJG1308F DRIVER-AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1308F is a GaAs MMIC Driver-Amplifier for 800MHz1.9 GHz band of Cellular phone System. It features a low current consumption and a high gain. Small MTP6 package is adopted. nPACKAGE OUTLINE NJG1308F


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    NJG1308F NJG1308F 800MHz1 938MHz 1441MHz 1900MHz 12dBm 11dBm 650-106 1308F GRM39 HK1608 PDF

    938-960

    Abstract: 650-106 1308F GRM39 HK1608 NJG1308F
    Contextual Info: NJG1308F DRIVER-AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1308F is a GaAs MMIC Driver-Amplifier for 800MHz1.9 GHz band of Cellular phone System. It features a low current consumption and a high gain. Small MTP6 package is adopted. nPACKAGE OUTLINE NJG1308F


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    NJG1308F NJG1308F 800MHz1 938MHz 1441MHz 1900MHz 12dBm 11dBm 938-960 650-106 1308F GRM39 HK1608 PDF

    1691-03

    Abstract: GRM39 HK1608 NJG1102F1 DD4020 49349 78451 97556 48.888 MHZ 98567
    Contextual Info: NJG1102F1 LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1102F1 is a Low Noise Amplifier GaAs MMIC designed for 800MHz band cellular phone handsets. This amplifier provides low current consumption and low noise figure at low supply voltage of 2.5V, low noise


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    NJG1102F1 NJG1102F1 800MHz 820MHz 14dBm 1691-03 GRM39 HK1608 DD4020 49349 78451 97556 48.888 MHZ 98567 PDF

    1308F

    Abstract: GRM39 HK1608 NJG1308F VDD-30V
    Contextual Info: NJG1308F DRIVER-AMPLIFIER GaAs MMIC QGENERAL DESCRIPTION NJG1308F is a GaAs MMIC Driver-Amplifier for 800MHz1.9 GHz band of Cellular phone System. It features a low current consumption and a high gain. Small MTP6 package is adopted. QPACKAGE OUTLINE NJG1308F


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    NJG1308F NJG1308F 800MHz1 938MHz 1441MHz 1900MHz 12dBm 11dBm 1308F GRM39 HK1608 VDD-30V PDF

    ic la 7698

    Abstract: 130C SNA-300 SNA-386 SNA-386-TR1 SNA-386-TR2 SNA-386-TR3 SNA386
    Contextual Info: Product Description SNA-386 Stanford Microdevices’ SNA-386 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surfacemountable plastic package. This amplifier provides 21dB of gain when biased at 35mA and 4V. DC-3 GHz, Cascadable GaAs MMIC Amplifier


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    SNA-386 SNA-386 SNA-300) ic la 7698 130C SNA-300 SNA-386-TR1 SNA-386-TR2 SNA-386-TR3 SNA386 PDF

    Contextual Info: NBB-400 Cascadable Broadband GaAs MMIC Amplifier DC to 8GHz The NBB-400 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification needs. This 50Ω gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed


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    NBB-400 NBB-400 NBB400 NBB-400-D) DS131004 PDF

    Contextual Info: NBB-500 Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz The NBB-500 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification needs. This 50Ω gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed


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    NBB-500 NBB-500 NBB500 NBB-500-D) DS131004 PDF

    Contextual Info: NBB-310 Cascadable Broadband GaAs MMIC Amplifier DC to 12GHz The NBB-310 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification needs. This 50Ω gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed


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    NBB-310 12GHz NBB-310 NBB310 NBB-310-D) DS131004 PDF

    pin configuration of 8251

    Abstract: block diagram 8251 RAYTHEON RMPA1902A-58
    Contextual Info: RMPA1902A-58 PCS GaAs MMIC Power Amplifier PRODUCT INFORMATION Description Features The RMPA1902-58 is a monolithic high efficiency power amplifier for PCS CDMA personal communication system applications. The MMIC requires off-chip matching. The amplifier circuit design is a single ended configuration that


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    RMPA1902A-58 RMPA1902-58 pin configuration of 8251 block diagram 8251 RAYTHEON RMPA1902A-58 PDF

    Contextual Info: NBB-300 Cascadable Broadband GaAs MMIC Amplifier DC to 12GHz The NBB-300 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification needs. This 50Ω gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed


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    NBB-300 12GHz NBB-300 NBB300 NBB-300-D) DS131004 PDF

    HK1608

    Abstract: NJG1105F DCS1800 GRM36 HK1005
    Contextual Info: NJG1105F 1.8/1.9/2.1GHz BAND LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1105F is a Low Noise Amplifier GaAs MMIC designed for 1.8/1.9/2.1GHz digital cellular phone handsets such as DCS1800, PCS and W-CDMA. This amplifier provides low noise figure, high gain and


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    NJG1105F NJG1105F DCS1800, 1860MHz 1960MHz 2140MHz 1860/1960/2140MHz HK1608 DCS1800 GRM36 HK1005 PDF

    SNA-176-TR1

    Abstract: SNA-176 110C 155C DC-10 SNA-100 SNA-176-TR2 SNA-176-TR3
    Contextual Info: Product Description SNA-176 Stanford Microdevices’ SNA-176 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surface mountable stripline package. This amplifier provides 12dB of gain when biased at 50mA and 4V. DC-10 GHz, Cascadable GaAs MMIC Amplifier


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    SNA-176 SNA-176 DC-10 SNA-100) 500ure SNA-176-TR1 110C 155C SNA-100 SNA-176-TR2 SNA-176-TR3 PDF

    SNA-376

    Abstract: 120C 155C SNA-300 SNA-376-TR1 SNA-376-TR2
    Contextual Info: Product Description SNA-376 Stanford Microdevices’ SNA-376 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surface mountable stripline package. This amplifier provides 22dB of gain when biased at 35mA and 4V. DC-3 GHz, Cascadable GaAs MMIC Amplifier


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    SNA-376 SNA-376 SNA-300) 120C 155C SNA-300 SNA-376-TR1 SNA-376-TR2 PDF

    re 10019

    Abstract: FMM5054VF ED-4701 6117 heat sink
    Contextual Info: FMM5054VF Ku Band Power Amplifier MMIC FEATURES ・High Output Power: 33.0dBm typ. ・High Linear Gain: 31.0dB(typ.) ・Low Input VSWR ・Impedance Matched Zin/Zout = 50Ω ・Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5054VF is a MMIC amplifier that contains a three-stage amplifier,


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    FMM5054VF FMM5054VF re 10019 ED-4701 6117 heat sink PDF

    DCS1800

    Abstract: GRM36 HK1005 HK1608 NJG1105F dd s22
    Contextual Info: NJG1105F 1.8/1.9/2.1GHz BAND LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1105F is a Low Noise Amplifier GaAs MMIC designed for 1.8/1.9/2.1GHz digital cellular phone handsets such as DCS1800, PCS and W-CDMA. This amplifier provides low noise figure, high gain and


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    NJG1105F NJG1105F DCS1800, 1860MHz 1960MHz 2140MHz 1860/1960/2140MHz DCS1800 GRM36 HK1005 HK1608 dd s22 PDF

    SNA-276-TR1

    Abstract: SNA-276 110C 155C SNA-200 SNA-276-TR2 SNA-276-TR3
    Contextual Info: Product Description SNA-276 Stanford Microdevices’ SNA-276 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surface mountable stripline package. This amplifier provides 16dB of gain when biased at 50mA and 4V. DC-6.5 GHz, Cascadable GaAs MMIC Amplifier


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    SNA-276 SNA-276 SNA-200) SNA-276-TR1 110C 155C SNA-200 SNA-276-TR2 SNA-276-TR3 PDF

    NJG1105F

    Abstract: 2140MHz
    Contextual Info: NJG1105F Ver 1 12/25’99 TENTATIVE 1.9/2.1GHz LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1105F is a Low Noise Amplifier GaAs MMIC designed for 1.9/2.1GHz digital cellular phone handsets such as PCS and WCDMA. This amplifier provides low noise figure, high gain


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    NJG1105F NJG1105F 18aAs) 2140MHz PDF

    Contextual Info: FMM5054VF Ku Band Power Amplifier MMIC FEATURES ・High Output Power: 33.0dBm typ. ・High Linear Gain: 31.0dB(typ.) ・Low Input VSWR ・Impedance Matched Zin/Zout = 50Ω ・Small Hermetic Metal-Ceramic Package (VF) Device DESCRIPTION The FMM5054VF is a MMIC amplifier that contains a three-stage amplifier,


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    FMM5054VF FMM5054VF PDF

    Contextual Info: Product Description SCA-1 Stanford Microdevices’ SCA-1 is a high performance Gallium Arsenide MESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. 0.3-3 GHz, Cascadable GaAs MMIC Amplifier This amplifier is internally matched with typical VSWR of


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    100mW 20dBm PDF

    FMM5054VF

    Abstract: ED-4701
    Contextual Info: FMM5054VF Ku Band Power Amplifier MMIC FEATURES ・High Output Power: 32.5dBm typ. ・High Linear Gain: 31.0dB(typ.) ・Low Input VSWR ・Impedance Matched Zin/Zout = 50Ω ・Small Hermetic Metal-Ceramic Package(VF-pkg) Device DESCRIPTION The FMM5054VF is a MMIC amplifier that contains a three-stage amplifier,


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    FMM5054VF FMM5054VF ED-4701 PDF

    Contextual Info: E l Stanford Microdevices Product Description SNA-200 Stanford Microdevices' SNA-200 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides !6dB of gain when biased at 50mA and 4V. DC-6.5 GHz, Cascadable GaAs MMIC Amplifier External DC decoupling capacitors determine low frequency


    OCR Scan
    SNA-200 SNA-276, SNA-200 84-1LMIT1 PDF