MMIC AMPLIFIER X-BAND 10W Search Results

RF Power Amplifier 125KHz

Abstract: RFHA5966AX 4500m 1n4148 die GAAS FET AMPLIFIER x-band 10w RFHA5966A x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
Contextual Info: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF

MMIC X-band amplifier

Contextual Info: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF

FMA3012

Abstract: 22-A114 x-Band High Power Amplifier x-band mmic
Contextual Info: FMA3012 X-BAND 10W HIGH POWER AMPLIFIER GAAS MMIC FUNCTIONAL SCHEMATIC: FEATURES: • • • Advance Product Information v0.1 16.5dB Gain 10W Saturated Output Power at 9V pHEMT Technology VD1 GENERAL DESCRIPTION VD2 RF Input The FMA3012 is a high performance X-Band

P1006BD

Abstract: P1006-BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

tanaka gold wire

Abstract: MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

GAAS FET AMPLIFIER x-band 10w

Abstract: XP1006-BD XP1006-BD-EV1 P1006BD MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006-BD-000V
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier August 2007 - Rev 03-Aug-07 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

MMIC X-band amplifier

Abstract: mmic AMPLIFIER x-band 10w x-band power amplifier 6 ghz amplifier 10w MA08509D x-band mmic Gaas Power Amplifier 10W x-Band High Power Amplifier 10W Power Amplifier
Contextual Info: V 1.00 MA08509D 10W X-Band Power Amplifier 8.0 –11.0 GHz Features E E E E 8.0-11.0 GHz GaAs MMIC Amplifier 8.0 to 11.0 GHz Operation 10 Watt CW Saturated Output Power Level Variable Drain Voltage 8-10V Operation Self-Aligned MSAG MESFET Process Primary Applications

P1006

Abstract: GAAS FET AMPLIFIER x-band 10w XP1006 bonding XP1006 XP1006-BD
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

x-band mmic

Abstract: mmic AMPLIFIER x-band 10w x-band power amplifier
Contextual Info: RO-P-DS-3006 - A- MA08509D 10W X-Band Power Amplifier 8.0 –11.0 GHz Features ♦ ♦ ♦ ♦ 8.0-11.0 GHz GaAs MMIC Amplifier 8.0 to 11.0 GHz Operation 10 Watt CW Saturated Output Power Level Variable Drain Voltage 8-10V Operation Self-Aligned MSAG MESFET Process

Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2006 - Rev 01-Nov-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

power transistor gaas x-band

Abstract: x-band transistor
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier September 2005 - Rev 30-Sep-05 P1006 Features Chip Device Layout X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

power transistor gaas x-band

Abstract: mmic AMPLIFIER x-band 10w
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier June 2005 - Rev 05-Jun-05 P1006 Features Chip Device Layout X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

XP1007

Abstract: power transistor mimix x-band x-band power transistor power transistor gaas x-band
Contextual Info: 8.7-10.7 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1007 Features Chip Device Layout X-Band 10W Power Amplifier 18.0 dB Small Signal Gain +40.0 dBm Saturated Output Power 32% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

x-band limiter

Abstract: MMIC limiter LNA x-band x-band MMIC limiter x-band lna chip band Limiter MA01502D x-band mmic lna x-band mmic mmic AMPLIFIER x-band 10w
Contextual Info: V 1.00 MA01502D X-Band Limiter/Low Noise Amplifier 8.5 –12.0 GHz Features E E E E 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design –Excellent Return Loss Self-Aligned MSAG MESFET Process Primary Applications

x-band limiter

Abstract: x-band mmic lna LNA x-band MMIC X-band amplifier MMIC limiter x-band mmic band Limiter MA01502D 6 ghz amplifier 10w
Contextual Info: RO-P-DS-3002 MA01502D X-Band Limiter/Low Noise Amplifier 8.5 –12.0 GHz Features ♦ ♦ ♦ ♦ 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design –Excellent Return Loss Self-Aligned MSAG MESFET Process

x-band limiter

Abstract: x-band mmic band Limiter MA01503D LNA x-band MMIC limiter mmic AMPLIFIER x-band 10w LNA XBAND
Contextual Info: V 1.00 MA01503D X-Band Limiter/Low Noise Amplifier 8.5 –12.0 GHz Features ♦ ♦ ♦ ♦ 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design –Excellent Return Loss Self-Aligned MSAG MESFET Process Primary Applications

XP1006-BD

Abstract: XP1006 X-band GaAs pHEMT MMIC Chip GAAS FET AMPLIFIER x-band 10w Chip Advanced Tech
Contextual Info: XP1006-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Rev 01-Sep-10 Features Chip Device Layout • X-Band 10W Power Amplifier • 21.0 dB Large Signal Gain • +40.0 dBm Saturated Output Power • 30% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing

5.8 ghz amplifier 10w

Contextual Info: MGA-495940-02 4.9 – 5.9 GHz 10W High Efficiency Linear Power Amplifier Preliminary Data Sheet November 2008 Features: •        12 dB Gain 40 dBm P-3dB 33 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 25% Efficiency at 33 dBm Linear Output Power

Contextual Info: MGA-495940-02 4.9 – 5.9 GHz 10W High Efficiency Linear Power Amplifier Preliminary Data Sheet November 2008 Features: •        12 dB Gain 40 dBm P-3dB 33 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 25% Efficiency at 33 dBm Linear Output Power

MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi

Contextual Info: MGA-333840-02 3.3 – 3.8 GHz 10W High Efficiency Linear Power Amplifier New Product Data Sheet December 2008 Features: • • • • • • • • 12 dB Gain 40 dBm P-3dB 33 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 25% Efficiency at 33 dBm Linear Output Power

Traveling Wave Amplifier

Abstract: 95GH Dielectric Constant Silicon Nitride MMIC POWER AMPLIFIER hemt APMC2001 FMM5820X HMC-AUH312 TGA4803 TGA4906 InGaAs hemt biasing
Contextual Info: DC to 85GHz TWA and Ka-band 4.9W Power Amplifier Using an Optical Lithography Based Low Cost PHEMT Process Kohei Fujii, John Stanback, and Henrik Morkner White Paper Abstract Overview of The Mmic Process An optical photo lithography based 0.15 m GaAs PHEMT

x-band power transistor

Abstract: x-band microwave fet MMIC X-band amplifier x-band mmic lna GAAS FET AMPLIFIER x-band 10w microwave transceiver X-band GaAs pHEMT MMIC Chip X band 5-bit phase shifter x-band mmic x-band limiter
Contextual Info: MAY 2000 GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While Reducing Chip Size and Cost by Dr. Edward L. Griffin and D. Gary Lerude, Aerospace & Defense ICs, M/A-COM, a Tyco Electronics Company Introduction After more than 20 years of DoD technology development, the exploding

FMCW Radar

Abstract: radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"
Contextual Info: INFINEON TECHNOLOGIES AG’S SALES OFFICES WORLDWIDE – P A R T LY R E P R E S E N T E D B Y S I E M E N S A G AUS Siemens Ltd. 885 Mountain Highway Bayswater, Victoria 3153 T +61 3-97 21 2 1 11 Fax (+61) 3-97 21 72 75 BR Infineon Technologies South America Ltda.