MMIC INA Search Results

AcP 9805

Contextual Info: DISCRETE SEMICONDUCTORS BGA2031 MMIC variable gain amplifier P relim inary specification Philips Sem iconductors 1999 Feb 26 PHILIPS Philips Semiconductors Preliminary specification MMIC variable gain amplifier BGA2031 FEATURES PINNING SOT551 • High gain

TQP7M4002

Abstract: LB514
Contextual Info: TQP7M4002 Advance Datasheet 3V Quad-Band E-GSM/GSM850/DCS/PCS Power Amplifier MMIC Description: Package Outline : The TQP7M4002 is a quad-band capable 3V power amplifier MMIC for GSM applications. Fabricated with a high-reliability InGaP GaAs HBT technology, the MMIC supports GPRS Class12 operation. By virtue of advanced design techniques,

sot89 mmic 25

Abstract: ap201 mmic amplifier sot-89 mmic sot-89 AP-201 MESFET GaAs MMIC Gain Block sot-89
Contextual Info: MMIC AP201 Product Features Application • 50 ~ 1000MHz • GaAs MESFET MMIC • 40dBm Output IP3 • 14dB Gain • 21dBm P1 dB • SOT-89 Package • High Linearity Drive Amplifier Description Package Type: SOT-89 AP201 is a gain block amplifier designed with GaAs MESFET MMIC in a low cost SOT-89 package.

Contextual Info: MMIC AP245 Product Features Application • 300 ~ 3000 MHz • GaAs MMIC • 42dBm Output IP3 • 26dB Gain • 21dBm P1dB • Single +5V Supply • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Description Package : SOIC-8 AP245 is a high linearity amplifier designed with GaAs MMIC in a low cost.

Contextual Info: DISCRETE SEMICONDUCTORS E>^m ì ^iit BGA2001 silicon MMIC amplifier Objective specification 1998 Sep 01 File under Discrete Semiconductors, SC14 Philips Semiconductors PHILIPS Philips Semiconductors Objective specification silicon MMIC amplifier BGA2001 FEATURES

Contextual Info: DISCRETE SEMICONDUCTORS BGA2022 MMIC mixer Objective specification File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Jan 13 PHILIPS Philips Semiconductors Objective specification MMIC mixer BGA2022 FEATURES PINNING SOT457 • Large frequency range

A2003

Abstract: ung 05251
Contextual Info: DISCRETE SEMICONDUCTORS BGA2003 Silicon MMIC amplifier Objective specification Supersedes data of 1998 Sep 01 Philips Sem iconductors 1999 Feb 25 PHILIPS Philips Semiconductors Objective specification silicon MMIC amplifier BGA2003 FEATURES PINNING SOT343R

Contextual Info: MMIC AP245 Product Features Application • 300 ~ 3000 MHz • GaAs MMIC • 42dBm Output IP3 • 26dB Gain • 21dBm P1dB • Single +5V Supply • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package : SOIC-8 Description AP245 is a high linearity amplifier designed with GaAs MMIC in a low cost.

RFHIC

Abstract: b880 ap211 AP-211
Contextual Info: MMIC AP211 Product Features Application • 50 ~ 3000 MHz • GaAs MMIC • 42dBm Output IP3 • 13dB Gain • 24dBm P1dB • Single +5V Supply • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Description Package : SOIC-8 AP211 is a high linearity amplifier designed with GaAs MMIC in a low cost.

Contextual Info: DISCRETE SEMICONDUCTORS E>^m ì ^iit BGA2002 silicon MMIC amplifier Objective specification 1998 Sep 01 File under Discrete Semiconductors, SC14 Philips Semiconductors PHILIPS Philips Semiconductors Objective specification silicon MMIC amplifier BGA2002 FEATURES

Contextual Info: DISCRETE SEMICONDUCTORS BGA2001 silicon MMIC amplifier Preliminary specification Supersedes data of 1999 Jan 01 Philips Sem iconductors 1999 Feb 25 PHILIPS Philips Semiconductors Preliminary specification silicon MMIC amplifier BGA2001 FEATURES PINNING SOT343R

9.75 GHz or 10.6 GHz

Abstract: GD-25 MGF1001P
Contextual Info: Jan./1999 MITSUBISHI SEMICONDUCTOR <GaAs FET> r Prelim inary Mitsubishi Proprietary Not to be reproduced or "disclosed without permission by Mitsubishi Electric D ESCR IPTIO N M G F 1001 P Dual Oscilltor MMIC _ Outline Drawing The M GF1001P is a MMIC designed for use in

L1626

Abstract: E10 rt duroid epsilam 10 0.025 MSA-0104 avago mmic frequency divider MSA-0135 MSA-0204 S001 modamp Epsilam-10
Contextual Info: Basic MODAMP MMIC Circuit Techniques Application Note S001 Introduction and MODAMP MMIC Structure Avago Technologies’ MSA Monolithic Silicon Amplifier series MODAMP silicon bipolar Monolithic Microwave Integrated Circuits (MMICs) are intended for use as general

Contextual Info: Preliminary SBF-4089 Product Description DC-500 MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBF-4089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process

N4 MMIC

Contextual Info: NGA-489 Product Description 0.5-10 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-489 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance

Contextual Info: T485BVCO GaAs 38 GHz VCO MMIC with Two-Stage Buffer Amplifier • Monolithic Microwave Integrated Circuit MMIC Voltage Controlled Oscillator with Buffer Amplifier • InGaAs/AIGaAs/GaAs Pseudomorphic HEMT Technology • Frequency range: 34 GHz to 42 GHz

Bw5 transistor

Abstract: ML200C SBW-5089 broadband bias tee
Contextual Info: Preliminary Data Sheet SBW-5089 Product Description DC-8 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBW-5089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP

Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA5585025F

Abstract: power transistor gaas x-band CMPA5585025F-TB
Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

NGA-489

Contextual Info: NGA-489 Product Description 0.5-10 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-489 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance

RFIC and MMIC Amplifiers

Abstract: HPMX-3002 mmic ina Hewlett-Packard transistor microwave
Contextual Info: RFIC and MMIC Amplifiers Hewlett-Packard offers a broad line of Radio Frequency Integrated Circuit RFIC and Monolithic Microwave Integrated Circuit (MMIC) amplifiers for use in all aspects of the communications industry. 15␣ GHz. Design flexibility is

marking N5 mmic

Abstract: NGA589
Contextual Info: NGA-589 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-589 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance

marking N5 mmic

Abstract: marking n5 amplifier NGA-589 marking n5 amplifier 6.0 GHZ mmic n5
Contextual Info: NGA-589 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-589 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance

N4 Amplifier

Abstract: marking n4 mmic NGA-489 amplifier marking n4 N4 MMIC
Contextual Info: NGA-489 Product Description 0.5-10 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ NGA-489 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance