Xa2 TRANSISTOR
Abstract: SXH-189 AN023
Text: Preliminary Preliminary Product Description Stanford Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth
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SXH-189
SXH-189
EDS-101247
Xa2 TRANSISTOR
AN023
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BTS antenna structure
Abstract: hmc192 HMC18214 hittite cross HMC187MS8 HMC165S14 HMC172QS24 HMC173MS8 HMC175MS8 HMC183QS24
Text: MICROWAVE CORPORATION GaAs MMICs FOR CHANGING BASESTATION REQUIREMENTS FEBRUARY 2000 GAAS MMICS FOR CHANGING BASE STATION REQUIREMENTS oday wireless infrastructure designers are being faced with increasingly challenging requirements. Cellular base transceiver stations BTS , or base station, are becoming smaller,
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HMC175MS8
HMC187MS8
BTS antenna structure
hmc192
HMC18214
hittite cross
HMC187MS8
HMC165S14
HMC172QS24
HMC173MS8
HMC175MS8
HMC183QS24
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S4 78a DIODE schottky
Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
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25-RF-BIPOLAR-Transistors.
45-RF-BIPOLAR-Transistors.
OT-23
OT-143
S4 78a DIODE schottky
diode S6 78A
BC 148 TRANSISTOR DATASHEET
transistors BC 543
TRANSISTOR BC 158
BC 158 is npn or pnp
68W npn
TRANSISTOR BC
s6 78a
baw 92
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soldering-iron
Abstract: 2M45-1505-L-TIC
Text: EXCELICS SEMICONDUCTOR, INC. DEVICE HANDLING RECOMMENDATIONS GaAs FETs and MMICs are “Class 1” devices in terms of Electrostatic Discharge ESD sensitivity, by DOD-STD-1886 definition. Handling these devices must at all times be done with ESD precautions. It is very important that the work
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DOD-STD-1886
235oC
215oC.
350oC
soldering-iron
2M45-1505-L-TIC
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Untitled
Abstract: No abstract text available
Text: Product Description SXT Series Stanford Microdevices’ SXT Series are high performance GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic packages. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and
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Feb-98
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XA2 MMIC
Abstract: TOP MARKING C1 ROHM lot No MPO-100136 SIRENZA Sirenza C4 marking
Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-289
SXA-289
MPO-100136
016REF
118REF
041REF
015TYP
EDS-100622
XA2 MMIC
TOP MARKING C1 ROHM lot No
SIRENZA
Sirenza C4 marking
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Sirenza amplifier SOT-89 Marking
Abstract: .XA2
Text: Not Recommended for New Designs Product Description SXH-189 Sirenza Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth
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SXH-189
SXH-189
SXA-289
016REF
118REF
041REF
EDS-101247
Sirenza amplifier SOT-89 Marking
.XA2
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1485C
Abstract: SE 194 Sirenza amplifier SOT-89
Text: Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-389B
SXA-389B
MPO-100136
016REF
118REF
041REF
015TYP
EDS-102915
1485C
SE 194
Sirenza amplifier SOT-89
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XA2 MMIC
Abstract: Xa2 TRANSISTOR
Text: Preliminary Preliminary Product Description SXA-289 Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular
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SXA-289
SXA-289
EDS-100622
XA2 MMIC
Xa2 TRANSISTOR
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transistor 20 dB 2400 mhz
Abstract: No abstract text available
Text: Preliminary Preliminary Product Description SXT-289 Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular
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SXT-289
SXT-289
EDS-101157
transistor 20 dB 2400 mhz
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a3909
Abstract: No abstract text available
Text: Preliminary Preliminary Product Description Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth
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SXT-289
SXT-289
1800-2500ust
EDS-101157
a3909
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GN02039B
Abstract: GN01087B GN01154B 2.4 GHz driver amplifier SW SPDT GN01081B GN01096B GN01105B GN01106B GN01121B
Text: FETs, IPD, IGBTs, GaAs MMICs • GaAs MMICs ● GaAs MMICs for Mobile Communication Use Block LowNoise Amp. Part No. Antenna Switch RF Characteristics typ. Applications GN01087B Single-chip front end VDD = 3.4 V, IDD = 5.0 mA, f = 1.9 GHz CG: 20 dB NF: 4.0 dB
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GN01087B
GN01096B
GN01121B
GN02029B
dB/12
GN02034B
GN04028N
GN04041N
GN04033N
GN01154B
GN02039B
GN01087B
GN01154B
2.4 GHz driver amplifier
SW SPDT
GN01081B
GN01096B
GN01105B
GN01106B
GN01121B
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Untitled
Abstract: No abstract text available
Text: BLM7G1822S-20PB; BLM7G1822S-20PBG LDMOS 2-stage power MMIC Rev. 1 — 19 December 2013 Objective data sheet 1. Product profile 1.1 General description The BLM7G1822S-20PB and BLM7G1822S-20PBG are dual path, 2-stage power MMICs using NXP’s state of the art GEN7 LDMOS technology. These multiband devices are
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BLM7G1822S-20PB;
BLM7G1822S-20PBG
BLM7G1822S-20PB
BLM7G1822S-20PBG
S-20PBG
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P09N02
Abstract: No abstract text available
Text: v03.0207 QUALITY & RELIABILITY QUALITY ASSURANCE Standard Process for Packaged MMICs C8, G7, G8, G16, LC3B, LC4, LC5, LH5, LH250, LM1, LM3, LM3B, P7 Packages Pick Die from Qualified Wafers 100 % Visual Inspect Kit and Record Lot Numbers Clean Package Die Attach/Epoxy Cure
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LH250,
W10N02,
W10N03,
W09N03,
W09N04,
P15N04,
P03N01,
P09N02,
P09N02
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Untitled
Abstract: No abstract text available
Text: GaAs MMICs GN02019B GaAs IC with built-in ferroelectric Local amplifier for cellular phone For a mixer amplifier unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 +0.1 +0.1 M Di ain sc te on na tin nc ue e/ d 6 0.5 –0.05 ● Wide band mixer
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GN02019B
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GN02018B
Abstract: No abstract text available
Text: Panasonic GaAs MMICs GN02018B GaAs IC with built-in ferroelectric Unit : mm For mixer with built-in local amplifier of cellular phone Other communication equipment IE • Features • High conversion-gain, low noise, low distortion (IP3) • Single, positive power supply
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GN02018B
820MHz
950MHz,
-10dBm
-30dBm
GN02018B
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GN01037B
Abstract: No abstract text available
Text: Panasonic GaAs MMICs GN01037B GaAs IC with built-in ferroelectric Unit : mm For transmitting preamplifier of cellular phone Other communication equipment IE • Features • Low-noise amplifier with AGC • Single, positive power supply • f= 0.9GHz 3 tn
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GN01037B
95GHz
-20dBm
50kHz
GN01037B
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Untitled
Abstract: No abstract text available
Text: MMICs GN1042 GN 1042 Tentative GaAs N Channel 1C RF Package Dimensions For UHF/VHD band wide bandwidth low-noise RF amplification U nit ! mm •Features 2.8-0;j •Excellent secondary distortion characteristics •A MINI type package (4-pin) version o f GN1041
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GN1042
GN1041
25MHz,
25MHz
64wave
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Untitled
Abstract: No abstract text available
Text: Panasonic GaAs MMICs GN05008N GaAs 1C Unit : mm For PHS transmitting front-end amplifier Other communication equipment • Features • Low consumption current Idmax. 180mA • Small surface-mounting package • Built-in matching circuit between stages 1
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GN05008N
180mA)
100pF
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Untitled
Abstract: No abstract text available
Text: Panasonic GaAs MMICs GN1042 GaAs N-Channel MES IC Unit : mm For VHF/UHF wide-band low-noise RF-amplificaiton • Features • Superior in 2nd harmonics distortion • Automatic mounting is possible with emboss taping. Absolute Maximum Ratings Parameter Power supply voltage
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GN1042
50MHz
600MHz
25MHz
2200pF
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Untitled
Abstract: No abstract text available
Text: Panasonic GaAs MMICs GN1051 GaAs N-Channel IC For distributing amplifier • Features • With input-side matching-circuit • Low consumption current typ 3.6mA • Good reverse isolation (separation) ■ Absolute Maximum Ratings (Ta = 25°C) Param eter
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GN1051
1053MHz
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Untitled
Abstract: No abstract text available
Text: Panasonic GaAs MMICs GN01071B GaAs IC with b u ilt-in fe rro e le ctric L o w -n o is e a m p lifie r fo r C D M A • Features 0 Gain control amplifier for 1.5GHz 0 Low consumption current ■ A b s o lu te M a xim u m R atings (Ta = 25°C) P aram eter
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GN01071B
SC-74
850MHz
850MHz/850
100pF
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F1313
Abstract: F-1203 F1283 S0T143 kgf1323 KGF1305s KGF2701
Text: MMICs an d FETs C o m m u n ic a tio n s 5 V A m p l if ie r s and M ix e r s Supply Part Number KGF1145 Description KGF1146 Output Power Idd> 4 /S O P VCO buffer, limiting amp, small signal, self-biased KGF1155B signal m ixer amp 4 /S O P signal m ixer amp
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OT143)
S0T143)
S0T143I
KGF1145
KGF1146
F1145
F1313
F-1203
F1283
S0T143
kgf1323
KGF1305s
KGF2701
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Untitled
Abstract: No abstract text available
Text: ALPHA IN»/ S E M I C O N D U C T O bME D • 05flS4M3 OOOlñflñ 1«J3 ■ ALP . MMICs Diversity Switches in SOIC Packages
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05flS4M3
ADC02D2-12
ADH01D2-24
ADHD1D2-24
AH002R2-12
002R2-12
ASC02S2-12
ASD01R2-12
ASD02R2-12
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