MN DIODE Search Results

Contextual Info: , laser diodes drawings Units in mn. FIG. 2 FIG. Units in mn. FIG. 4 FIG. 1-800-278-5666 www.lumex.com 11 ^ 1-800-944-2790 , LUàéi ÜL laser diodes drawings Units in mm. Units in mn. FIG. 6 Ball Lens Units in mm. FIG. 7 Flat Window s 1-800-278-5666 £§! www.lumex.com

DIODE D 92 02 78.P

Abstract: PYQ+1748 tv 256 diode tv 256 R diode
Contextual Info: SKM 50GB123D . J3 L MN OD? * /299 .+:248'92 9 23'@'25 Absolute Maximum Ratings Symbol Conditions IGBT PDQ& JR L MN OD CD JR L TNU OD CDX$ TMUU P NU G J3092 L VU OD WU G TUU G Z MU P JR L TMN OD TU ^9 J3092 L MN OD NU G J3092 L VU OD WU G TUU G JR L TNU OD

Contextual Info: SK75GARL065E B- L MN O$P 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT Q$RG BS L MN O$ C$ BS L WMN O$ C$ZJ UVV Q XV Y B- L XV O$ NN Y WXV Y [ MV Q BS L WMN O$ WV `- B- L MN O$ Na Y B- L XV O$ ¥X Y C$ZJL M : C$0%& *'-) Q$$ L ¥VV Q] QDR ^ MV Q]

Contextual Info: SK50GH065F C- L MN O$P 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT K$QJ CR L MN O$ D$ CR L UMN O$ D$YZ *'-) STT K NV W C- L XT O$ VT W UTT W [ MT K CR L UMN O$ UT `- C- L MN O$ XM W C- L XT O$ NT W UMT W D$YZL M ; D$0%& K$$ L ¥TT K] KEQ ^ MT K]

c.i 7404

Contextual Info: SK55GARL065E B- L MN O$P 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT Q$RG BS L MN O$ C$ BS L WMN O$ C$[J UVV Q NX Y B- L ZV O$ XV Y WMV Y ¥ MV Q BS L WMN O$ WV a- B- L MN O$ ]U Y B- L ZV O$ MX Y C$[JL M : C$0%& *'-) Q$$ L ]VV Q^ QDR _ MV Q^

Contextual Info: SK 100 TAA HIGJ HIIJK H<IJ MNO CEE P H SEE CUEE H QEE CVEE ;N- O QE R$> GT CEE NPP EQ GT CEE NPP CV CWEE CDEE GT CEE NPP CD Characteristics Symbol Conditions SEMITOP 2 Two separated thyristors Values Units MN N- O CEER$ DX P MN N- O QER$ CEE P MNGJYMZGJ

Contextual Info: SK 35 TAA HIGJ HIIJK H<IJ MNO PQ R H UEE CPEE H SEE CWEE ;N- O SE T$> GVPQNRRES GVPQNRRCW CXEE CDEE GVPQNRRCD Characteristics Symbol Conditions SEMITOP 2 Two separated thyristors Values Units MN N- O CEET$ WP R MN N- O SET$ PQ R MNGJYMZGJ N@[ O WQ ;CWQ> T$¥ CE &-

Contextual Info: SK 55 TAA HIGJ HIIJK H<IJ MNO PP Q H TEE CVEE H REE CWEE ;N- O RE S$> GUPPNQQER GUPPNQQCW CXEE CDEE GUPPNQQCD Characteristics Symbol Conditions SEMITOP 2 Two separated thyristors Values Units MN N- O CEES$ VD Q MN N- O RES$ PP Q MNGJYMZGJ N@[ O WP ;CWP> S$¥ CE &-

Contextual Info: SK 75 TAA HIGJ HIIJK H<IJ MNO PQ R H UEE CWEE H SEE CXEE ;N- O SE T$> GVPQNRRES GVPQNRRCX CPEE CDEE GVPQNRRCD Characteristics Symbol Conditions SEMITOP 2 Two separated thyristors Values Units MN N- O CEET$ YP R MN N- O SET$ PQ R MNGJZM[GJ N@¥ O XQ ;CXQ> T$] CE &-

eltec

Contextual Info: ROHM Corporation representatives US and Canada Massachusetts (Connecticut, Maine, New Hampshire, Rhode Island, Vermont) Focus Sales, Inc., Taunton, MA (800) 933-2771 Minnesota (Iowa, North & South Dakota) Hopewell Associates, Lakeville, MN (612) 469-3222

eltec

Contextual Info: ROHM Corporation representatives US and Canada Massachusetts (Connecticut, Maine, New Hampshire, Rhode Island, Vermont) Focus Sales, Inc., Taunton, MA (800) 933-2771 Minnesota (Iowa, North & South Dakota) Hopewell Associates, Lakeville, MN (612) 469-3222

MNxx

Abstract: MN81 GWOY6039 GWOY6040 Q62702-P3555 Q62702-P5312 din 74 MN81-G
Contextual Info: Passively Cooled Diode Laser Bar SPL MNxx No Optics SPL MYxx Fast-Axis Collimation SP-pack. left , DL-pack. (right) Features Applications • Uncollimated (MN-series) or fast-axis collimated radiation (MY-series) • 1 cm-laser bar mounted on passive heat sink,

Contextual Info: aJ*S^ I Ì ^ mn* l GaAs INFRARED EMITTING DIODE ^ U B OPTOELECTRONICS _CQX15, CQX17 |l«gOW iyilW |*] The CQX15/17 are 940nm LEDs in wide angle, TO-46 packages. II piumppi i I . .Ill mw I. ST1331 • Good optical to mechanical alignment SYMBOL

din 74

Abstract: GWOY6039 GWOY6040 Q62702-P3555 Q62702-P5312 K1222
Contextual Info: Passively Cooled Diode Laser Bar SPL MNxx No Optics SPL MYxx Fast-Axis Collimation Preliminary Data SP-pack. left , DL-pack. (right) Features Applications • Uncollimated (MN-series) or fast-axis collimated radiation (MY-series) • 1 cm-laser bar mounted on passive heat sink,

din 74

Abstract: MN81G GWO06039 GWO06040 Q62702-P3555 Q62702-P5312
Contextual Info: Passively Cooled Diode Laser Bar SPL MNxx No Optics SPL MYxx Fast-Axis Collimation Preliminary Data SP-pack. left , DL-pack. (right) Features • Uncollimated (MN-series) or fast-axis collimated radiation (MY-series) • 1 cm-laser bar mounted on passive heat sink,

Contextual Info: QUALITY TECHNOLOGIES AIGaAs Infrared Emitting Diode QEC123 DESCRIPTION The Q EC123 is a 880 mn AIGaAs LED encapsulated in a clear, purple tinted, plastic T-1 package. FEATURES •I 74bbß51 □ □D4fl fl cl 0 3 2 ■ Tight production Ee distribution with 3:1

Contextual Info: Passively Cooled Diode Laser Bar SPL MNxx Only available in North America SP-pack. left , DL-pack. (right) Features Applications • Uncollimated (MN-series) • 1 cm-laser bar mounted on passive heat sink, no water required • Highly reliable strained layer InGa(Al)As/GaAs

Clairex Electronics

Abstract: CLD42 CLD41 CLD41BB CLD42BB
Contextual Info: 11E D CLAIREX ELECTRONICS DIV CLD41 Product Data CLD42 CLD41BB CLD42BB Silicon Planar Photovoltiac Diodes 3145711 000Q745 » •»Sot A. ±•010 •ti 6 I MN. II CATHOOE ANODE* GENERAL DESCRIPTIO N — The CLD Series of Photo­ diodes is specifically designed to optimize Photovoltaic

Contextual Info: High-Speed CMOS Logic MN74HC Series mn 74HC i o / mn 74HC ios MN74HC10/MN74HC10S T riple 3 -Input NAND G ates • Description M N 7 4 H C 1 0 /M N 7 4 H C 1 0 S c o n ta in th re e 3 -in p u t positiv e iso la tio n N A N D gate circu its. A d o p tio n o f a silico n gate C M O S p rocess has resulted in low

h33 diode

Contextual Info: MIVR 42095 mn NEGATIVE HIGH TEMPERATURE REGULATOR Designed for use in high temperature environments FEATURES • Output current to 1.5 amps • Input voltage to -30V • Internal short circuit protection, foldbackand current limiting • StorageTemperature +250°C

Contextual Info: 66139-XXX 4N50 mn- OPTICALLY COUPLED ISOLATOR OPTOELECTRONIC PRODUCTS DIVISION Features: Applications: • • • • • • • • • High Isolation High Transfer Ratio High Voltage Output Low Dissipation Isolated case Power supplies Transmitters Digital circuits

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30VS-3 HIGH-SPEED SWITCHING USE FS30VS-3 OUTLINE DRAWING Dimensions in mm 10.5MAX, 4.5 1.3 \ " t mn ? 3 S F Î 0.5 0.8 ^ 1 • i ; . 2, _ Q . !} GATE 2 DRAIN î SOURCE

Contextual Info: TOSHIBA HN2D01FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H mN ? mnm r n i F 11 'm • ■ ULTRA HIGH SPEED 5WITCHING APPLICATION. Unit in mm HN2D01FU is composed of 3 independent diodes. TT Low Forward Voltage A A m T /m • Fast Reverse Recovery Time : trr = 1.6ns Typ.

YTF830

Abstract: Field Effect Transistor Silicon N Channel MOS vdss 600
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOSH YTF830 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-OC CONVERTER AND HOTOR Unit in mn DRIVE APPLICATIONS. 10.3MAX. ¿ 3 .6 * 0 . 2 -ë -f FEATURES: