MO-229 PAD LAYOUT Search Results

cr2032 toshiba

Abstract: panasonic cl2020 TOSHIBA lithium battery CR2032 coin cell pc battery holders sony cr2032 cr2032 reflow TOSHIBA CR2032 panasonic CR2430 CL2320 VARTA 4061
Contextual Info: COIN CELL PC BATTERY HOLDERS SURFACE & THRU HOLE MOUNT COIN CELL RETAINER CONTACTS Economical and reHablo retainer contacts arc designed for quick and easy battery installation and replacement. Perfect lor memory back up «plications. Surlace and thru hole mount retainer contacts are available for

Contextual Info: Product Color Information Plastic Enclosures: Beige Blue Black Grey Painted Diecast Aluminum Enclosures: Black Watertight - 1590Z Series Grey RAL 7001 General Purpose Metal Enclosures: Black Contempra Grey (RAL 7032) Blue ASA 61 Grey NOTE: This color chart page is included for reference only. It was created with printers ink and gives

Contextual Info: XC4000, XC4000A, XC4000H Logic Cell Array Families f l XILINX Product Description Features D e sc rip tio n • Third Generation Field-Programmable Gate Arrays - Abundant flip-flops - Flexible function generators - On-chip ultra-fast RAM - Dedicated high-speed carry-propagation circuit

NEC Ga FET

Abstract: Nec K 872 NE325S01 AM/SSC 9500 ic data
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero Junction FET that utilizes the hetero junction to create high m obility electrons. Its excellent low noise and high associated gain make it suitable for DBS

Contextual Info: LTC2051/LTC2052 Dual/Quad Zero-Drift Operational Amplifiers U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Maximum Offset Voltage of 3 V Maximum Offset Voltage Drift of 30nV/°C Small Footprint, Low Profile MS8/GN16 Packages Single Supply Operation: 2.7V to ±5.5V

051hvh

Abstract: LTC2051HVCDD LTC2052HVHS LTC2051 LTC2051HV LTC2052 LTC2051HVIMS10
Contextual Info: LTC2051/LTC2052 Dual/Quad Zero-Drift Operational Amplifiers U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Maximum Offset Voltage of 3 V Maximum Offset Voltage Drift of 30nV/°C Small Footprint, Low Profile MS8/GN16 Packages Single Supply Operation: 2.7V to ±5.5V

LTC2051

Abstract: LTC2051HV LTC2052 S14 MSOP
Contextual Info: LTC2051/LTC2052 Dual/Quad Zero-Drift Operational Amplifiers U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Maximum Offset Voltage of 3 V Maximum Offset Voltage Drift of 30nV/°C Small Footprint, Low Profile MS8/GN16 Packages Single Supply Operation: 2.7V to ±5.5V

LT2051

Abstract: LT20 LTC2051 LTC2051HV LTC2052 2051HV
Contextual Info: LTC2051/LTC2052 Dual/Quad Zero-Drift Operational Amplifiers U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Maximum Offset Voltage of 3µV Maximum Offset Voltage Drift of 30nV/°C Small Footprint, Low Profile MS8/GN16 Packages Available in 3mm x 3mm × 0.8mm DFN Package

Contextual Info: £ XILINX XC4000 Series Field Programmable Gate Arrays July 30, 1996 Version 1.03 Product Specification XC4000-Series Features Additional XC4000EX/XL Features Note: XC4000-Series devices described in this data sheet • • include the XC4000E, XC4000EX, XC4000L, and

32x32 multiplier verilog code

Contextual Info: Prelim inary Advance inform ation Actel’s Reprogrammable SPGAs General Description Features SRAM-based System Programmable Gate Array SPGA Efficient silicon target for reusable VHDL and Verilog defined soft blocks Fine-grained logic and routing architecture

Transistor D 1881

Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE425S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high m obility electrons. Its excellent

FA526

Abstract: MSP2206 EA-3016 PMC-2052032 CP14 CP15 MSP2200 MSP2202 EAt-11 ARM coprocessor faraday
Contextual Info: Mo nd ay ,1 MSP2200 3M ar ch ,2 00 6 10 :1 2: 34 PM MSP2200 Data Sheet Advance rtm in er In co n Multi-Service Processor Advance Issue No. 1: November 2005 Do wn l oa de d by C on te nt T ea m of Pa Data Sheet Proprietary and Confidential to PMC-Sierra, Inc., and for its customers’ internal use.

Contextual Info: £ XILINX XC4000 Series Field Programmable Gate Arrays April 24, 1996 Version 1.00 Product Specification XC4000-Series Features Additional XC4000EX/XL Features Note: XC4000-Series devices described in this data sheet include the XC4000E, XC4000EX, XC4000L, and

xc400se

Abstract: xilinx pq-160 xilinx xc4006e 4028X cc16ce transistor r14 ah16 XC4025EX XC401OE pcb4 b34 952
Contextual Info: £ XILINX XC4000 Series Field Programmable Gate Arrays June 1, 1996 Version 1.02 Product Specification XC4000-Series Features Additional XC4000EX/XL Features Note: XC4000-Series devices described in this data sheet include the XC4000E, XC4000EX, XC4000L, and

Contextual Info: Advance Data Sheet February 1993 £ = — AT&T Microelectronics Optimized Reconfigurable Cell Array ORCA Series Field-Programmable Gate Arrays Features • High density: 3500 to 22,000 usable gates ■ High I/O: up to 288 usable I/O ■ High performance: 80 MHz system clock rate

Contextual Info: PM4388 TOCTL DATA SHEET ISSUE 5 OCTAL T1 FRAMER :3 1: 10 AM PMC-960840 ay fe fo n Mo nd TOCTL ,0 3M ay ,2 00 4 11 PM4388 DATASHEET Do wn lo ad ed by ef we fe fe fo fe OCTAL T1 FRAMER ISSUE 5: NOVEMBER 1998 PMC-Sierra, Inc. 105 - 8555 Baxter Place Burnaby, BC Canada V5A 4V7 604 .415.6000

Contextual Info: f lX IL IN X Virtex 2.5 V Field Programmable Gate Arrays November 9 ,1 9 9 8 Version 1.1 - ADVAN CE Product Specification Features • • • • • • Fast, high-density Field-Programmable Gate Arrays - Densities from 50k to 1M system gates - System performance up to 200 MHz

Contextual Info: HXILINX Virtex 2,5 ¥ Field Programmable Gate Arrays N ovem ber 9, 1998 Version 1.1 - AD VAN C E P roduct S pecification Features • • • • • • Fast, high-density Field-P rogram m able Gate Arrays - D ensities from 50 k to 1M system gates - System perform ance up to 200 MHz

Contextual Info: flX IU N X Spartan and S p artan X l Families Field Programmable Gate Arrays September 28, 1998 Version 1.2 Preliminary Product Specification Introduction • System level features - Available in both 5.0 Volt and 3.3 Volt versions - On-chip SelectRAM memory

Contextual Info: £ XILINX Virtex 2.5 V Field Programmable Gate Arrays February 16, 1999 Version 1.3 Advance Product Specification Features • • • • • • Fast, high-density Field-Programmable Gate Arrays - Densities from 50k to 1M system gates - System performance up to 200 MHz

GE rcrt 6-60

Abstract: ot 409 w31 an12 pic 632 463 phd decoder 7448 input 4 7448 with internal pullup c15n3
Contextual Info: HXILINX XC4000E and XC4000X Series Field Programmabie Gate Arrays January 29, 1999 Version 1.5 Product Specification XC4000E and XC4000X Series Features Low-Voltage Versions Available Note: XC4000 Series devices described in this data sheet include the XC4000E family and XC4000X Series.

XAPP031

Contextual Info: £ XILINX XC4000E and XC4000X Series Field Programmable Gate Arrays November 10,1997 Version 1.4 Product Specification XC4000E and XC4000X Series Features Low-Voltage Versions Available Note: XC4000 Series devices described in this data sheet include the XC4000E family and XC4000X Series.

Stag P301

Abstract: p301 stag DE C 748 P99-P106 transistor cs 9013 ew p220 XC401OE TRANSISTOR R 40 AH-16
Contextual Info: HXILINX XC4000E and XC4000X Series Table of Contents XC4000E and XC4000X Series Field Programmable Gate Arrays XC4000E and XC4000X Series F

Contextual Info: :1 0: 33 PM S/UNI-1x10GE ASSP Telecom Standard Product Data Sheet Released 3M ar ch ,2 00 6 10 PM3392 Mo nd ay ,1 S/UNI 1x10GE Data Sheet Proprietary and Confidential Released Issue No. 6: February 2006 Do wn l oa de d by C on te nt T ea m of Pa rtm in er