MOBILITY ATI Search Results

ati rage

Abstract: ATI Rage jumper
Contextual Info: EPM-VID-3 PC/104-Plus Video Expansion Module • ATi Rage Mobility video chip • 8 MB video RAM  LVDS, CRT and TV out  16.7 Million displayable colors  PC/104-Plus form factor Highlights ATi Rage Mobility Video Chip M1 graphic accelerator provides outstanding performance.

celsius h230

Abstract: seimens notebook ATI Technologies graphics H230 V3100 V5000 Danny Mousses ATI 128
Contextual Info: Mobile Workstations ATI Mobility FireGL workstation graphics technology delivers • Industry leading price performance based on a scalable parallel processing architecture • Unified drivers for both mobile and desktop workstations • Optimized and certified for

amd SB600

Abstract: ATI SB460 SB460 ATI SB600 Athlon 64 X2 "high precision event timer" amd SB460 turion 64 x2 pin diagram amd athlon II x2 pin diagram AMD Athlon 64 X2
Contextual Info: AMD SB600 BIOS Developer’s Guide Public Version Technical Reference Manual Rev. 3.00 P/N: 46157_sb600_bdg_pub_3.00 2008 Advanced Micro Devices, Inc. Trademarks AMD, the AMD Arrow, ATI, the ATI logo, Radeon, Mobility Radeon, AMD Athlon, Sempron, Turion and

RS690M

Abstract: radeon 7500 RS690 radeon igp 1012 RS690MC ATI RS690 graphics card AMD Radeon HIS RX 480 ATI Mobility Radeon g3d0 Northbridge
Contextual Info: AMD RS690 ASIC Family Register Reference Guide Technical Reference Manual Rev. 3.00o P/N: 43372_rs690_rrg_3.00o 2007 Advanced Micro Devices, Inc. Trademarks AMD, the AMD Arrow logo, AMD Athlon, ATI, Mobility, PowerPlay, CrossFire, Radeon, and combinations thereof, are trademarks of Advanced Micro Devices, Inc.

pseudomorphic HEMT

Abstract: TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ FPD6836SOT343 OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564
Contextual Info: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 Product Description The FPD6836SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm

Transistor AC 51 0865 75 730

Contextual Info: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25Pmx1500Pm

LA852

Abstract: compal MAX7082 S1-A13 Compal Electronics pir schematic E15-E20 KBA18 md-3013 u2403
Contextual Info: COMPAL CONFIDENTIAL MODEL PCI / ISA PULL UP/DOWN RESISTERS PAGE 13 SODIMM -BANK 2,3 ON BOARD 32/64MB -BANK 0 443ZX-100M VGA ATI Mobility P PIRQA# PAGE 12 PSB PAGE 17 PAGE 16 ICS9248-92 PAGE 2,3 LCD & CRT SGRAM CLOCK Celeron uBGA2/uPGA2 CPU NAME : 888F1 LA852

FPD1500SOT89E

Abstract: est 0114 FPD1500SOT89 MIL-HDBK-263
Contextual Info: FPD1500SOT89E FPD1500SOT8 9E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89E is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm

Contextual Info: Product Description SMW Series Stanford M icrodevices’ SM W Series are high performance GaAs High Electron Mobility Transistor HEMT MMICs housed in therm ally-efficient ceram ic packages. These HEMT MMICs are fabricated using m olecular beam epitaxial growth

Contextual Info: Product Description SMW Series Stanford M icrodevices’ SM W Series are high performance GaAs High Electron Mobility Transistor HEMT MMICs housed in therm ally-efficient ceram ic packages. These HEMT MMICs are fabricated using m olecular beam epitaxial growth

transistor NEC D 586

Abstract: NEC D 586
Contextual Info: PRELIMINARY DATA SHEET_ HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000, NE29200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE321000 and NE29200 are Hetero Junction FET that utilizes the hetero junction to create high mobility

FPD1500SOT89CE

Abstract: 4506 gh Transistor BJT 547 b fpd1500sot89cesr 1850G
Contextual Info: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m

Transistor AC 51 0865 75 834

Contextual Info: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m

208H

Contextual Info: 1. M echanical D im ensions 2. Sch em atic: o-2T o- 3. E lectrical Specs: DCR: tbd Ohms Max Impedance: 510 Ohms Typ @25MHz 580 Ohms Typ 100MHz Notes: 1. Solderablllty: Leads shall meet M IL-STD -202G , Method 208H for solderability. 2. Flam mobility; U L94V-0

Contextual Info: PRELIMINARY DATA SHEET_ HETERO JUNCTION FIELD EFFECT TRANSISTOR NE4210S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

AM/SSC 9500 ic data

Contextual Info: PRELIMINARY DATA SHEET IV IF f " / h ETERO JUNCTION FIELD EFFECT TRANSISTOR / NE428M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE428M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

FPD1500SOT89CESR

Abstract: FPD1500SOT89 FPD1500SOT89E MIL-HDBK-263
Contextual Info: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

FPD1500SOT89

Abstract: FPD1500SOT89E MIL-HDBK-263 FPD1500SOT89CE 4506 gh
Contextual Info: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

RS780M

Abstract: RS780MC RX781 RS780E AMD RS780 790GX M780G RS780 ATI rs780 RS880
Contextual Info: AMD 780G Family Register Programming Requirements For the RS780, RS780C, RS780D, RS780M, RS780E, RS780MC, and RX781 Technical Reference Manual Rev. 1.01 P/N: 43291_rs780_rpr_pub_1.01 2009 Advanced Micro Devices, Inc. Trademarks AMD, the AMD Arrow logo, AMD Athlon, ATI, Mobility, PowerPlay, CrossFire, Radeon, and combinations thereof, are trademarks of Advanced Micro Devices, Inc.

FPD200P70

Abstract: TL11 TL22 l420 FPD200P70SR
Contextual Info: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.

RS780M

Abstract: RS780MC RX781 RS780 RS780E M780G ATI rs780 amd ati radeon 1011 AMD 780V RS780C
Contextual Info: AMD 780G Family BIOS Developer’s Guide For the RS780, RS780C, RS780D, RS780M, RS780E, RS780MC, and RX781 Technical Reference Manual Rev. 1.01 P/N: 43734_rs780_bdg_pub_1.01 2009 Advanced Micro Devices, Inc. Trademarks AMD, the AMD Arrow logo, AMD Athlon, ATI, Mobility, PowerPlay, CrossFire, Radeon, and combinations thereof, are trademarks of Advanced Micro Devices, Inc.

FPD200P70

Contextual Info: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.

fpd200p70

Abstract: w65 transistor FPD200P70SR TL11 TL22 "IPC 1752" gold 8GH transistor L30 type RF microwave power transistor FPD200P70SB 3400 transistor
Contextual Info: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.

Contextual Info: 1. Mechanical Dimensions: 2 . Schem atic: 3. Electrical Specifications: OCL: 100 uH ± 1 0 % @ 1.0KH z 1.0V DCR: 0 .4 9 0 Ohm s Max. IDC: 0.55 A Max. SRF: 8MHz Typ Notes: 1. Sol durability: Leads shall meet M IL-STD -202, Method 208D for solderability. Z. Flam mobility: U L94V-0