MODEL 285 Search Results
MODEL 285 Result Highlights (2)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TPS6508700RSKR |
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PMIC for AMD™ family 17h models 10h-1Fh processors 64-VQFN -40 to 85 |
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TPS6508700RSKT |
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PMIC for AMD™ family 17h models 10h-1Fh processors 64-VQFN -40 to 85 |
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MODEL 285 Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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Model 285 |
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Data Acquisition Products Catalog 1978 | Scan | 402.35KB | 4 | |||
Model 285J |
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Data Acquisition Products Catalog 1978 | Scan | 402.35KB | 4 | |||
Model 285K |
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Data Acquisition Products Catalog 1978 | Scan | 402.35KB | 4 | |||
Model 285L |
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Data Acquisition Products Catalog 1978 | Scan | 402.35KB | 4 |
MODEL 285 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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BNC-50
Abstract: ssm-5210 RFM70 ADT-2590-FF-NNN-02 TRM-2445-F0-SMA-02 dcb-3510
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8503812SP-6 8503812SP7 85071ZSGA 85071ZSGB 85072ZSGA 85072ZSGB ADT-2584-NM-TNM-02 ADT-2585-NM-TNF-02 ADT-2586-NF-TNM-02 ADT-2587-NF-TNF-02 BNC-50 ssm-5210 RFM70 ADT-2590-FF-NNN-02 TRM-2445-F0-SMA-02 dcb-3510 | |
STR W 6856
Abstract: str 6856 DCB-3525-IO-NNN-02 SMA-5582-35-HRM-02 EQL-4431-24-NEG-79 HYB-5411-X3-SMA-79 442-612 ADT-2597-MM-TNC-02 A799 TRM-2120-MC-HNO-02
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8503812SP-6 85071ZSGA 85071ZSGB 85072ZSGA 85072ZSGB 85073ZSGA. 85073ZSGB 85074ZSGA 85074ZSGB 8604412SP-1 STR W 6856 str 6856 DCB-3525-IO-NNN-02 SMA-5582-35-HRM-02 EQL-4431-24-NEG-79 HYB-5411-X3-SMA-79 442-612 ADT-2597-MM-TNC-02 A799 TRM-2120-MC-HNO-02 | |
Contextual Info: Engineering Development Model Voltage Controlled Oscillator ROS-EDR5571 Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a |
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CK605 ROS-EDR5571 ROS-EDR5571 | |
max2850Contextual Info: Engineering Development Model Voltage Controlled Oscillator ROS-ED9545/1 Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a |
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CK605 ROS-ED9545/1 10CATIONS ROS-ED9545/1 max2850 | |
Contextual Info: Engineering Development Model Voltage Controlled Oscillator ROS-EDR4538/1 Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a |
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CK605 ROS-EDR4538/1 ROS-EDR4538/1 | |
Contextual Info: Engineering Development Model Voltage Controlled Oscillator JTOS-EDR4392/1 Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a |
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BK377 JTOS-EDR4392/1 JTOS-EDR4392/1 | |
HA-2850Contextual Info: HA-2850 SPICE Operational Amplifier Macro-Model Application Note June 1998 MM2850.1 Introduction Poles and Zeros This application note describes the SPICE macro-model for the HA-2850, a wide bandwidth op amp. The model was designed to be compatible with the well known SPICE program developed by the University of California in hope that |
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HA-2850 MM2850 HA-2850, | |
Contextual Info: Engineering Development Model Power Splitter/Combiner RACK-3-ED11527/1 3 Way-0° Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a |
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RACK-3-ED11527/1 RACK-3-ED11527/1 | |
78FR10K-RC
Abstract: 78FR22K-RC 78FR27K-RC 78FR33K-RC 78FR39K-RC 78FR47K-RC 78F6R8J-RC
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Contextual Info: Engineering Development Model Frequency Mixer HJK-ED9605/2 Level 21 LO Power +21 dBm Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a |
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HJK-ED9605/2 TTT167 | |
dh 321
Abstract: HA-2850 607E-01
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HA-2850 MM2850 CH-1009 dh 321 607E-01 | |
baysilone M5
Abstract: DC200 silicone oil NACE ISO S26RE 266DDH ball valve PN 16 S26FA S26WA S26RA foundation fieldbus transmitter
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DS/266XDH-EN 266DDH 266HDH 266NDH 2600T C-276 C-2000 DC200 DC704 DS/266XDH-EN baysilone M5 DC200 silicone oil NACE ISO S26RE ball valve PN 16 S26FA S26WA S26RA foundation fieldbus transmitter | |
weinschel thermistorContextual Info: _ Weinschel Model 1107-7 18.0 to 26.5 GHz Model 1107-8 26.5 to 40.0 GHz WAVEGUIDE POWER TRANSFER STANDARD Terminating & Feedthrough NIST Calibrated or Traceable The Model 1107-7 Temperature Stabilized RF Power Standard enables precise measurement of microwave |
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WR-42 WR-28. Maryland21703-7362» weinschel thermistor | |
LT1560ED
Abstract: PQ2WZ51 LT024MD GP1F31T s202t02 GP1U801X LT022 GP2L20L GP1U78R PQ05DZ51
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GL1F20 GL380 QL381 GL382 GL390 GL390V GL453 GL454 GL480 GL480Q LT1560ED PQ2WZ51 LT024MD GP1F31T s202t02 GP1U801X LT022 GP2L20L GP1U78R PQ05DZ51 | |
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Contextual Info: SPICE Device Model SiS443DN www.vishay.com Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiS443DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model Si3493BDV www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si3493BDV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model Si4126DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si4126DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model SUD50N03-12P www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SUD50N03-12P 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
dn100 PN 16
Abstract: DN100 PN16 sace e3 4-20mA current transmitter hart intrinsically E I DUPONT wacker wacker general purpose silicone 2600T DN50 DN80-100
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SS/268XC 2600T 268DC 268HC 268NC 61508/ISA 16000kPa; 14inH2O 2320psi 16000kPa dn100 PN 16 DN100 PN16 sace e3 4-20mA current transmitter hart intrinsically E I DUPONT wacker wacker general purpose silicone DN50 DN80-100 | |
d_b_1_01
Abstract: b722
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QQ-C-533, QQ-B-626, QQ-N-290 B-72-2 d_b_1_01 b722 | |
Contextual Info: Pomona Model B Stack-Up Banana Plug Both Ends FEATURES: • Mates to Model #1581, 2854 or standard Banana Jack. • Cross and vertical stacking banana plug. • Ideal for providing jumpers or chassis boxes. MATERIALS: Conn: Extension Stacking Banana Plug |
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QQ-C-533, QQ-B-626, QQ-N-290 B-72-2 | |
Contextual Info: SPICE Device Model SiR774DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiR774DP 11-Mar-11 | |
Contextual Info: Pomona Model B Stack-Up Banana Plug Both Ends FEATURES: • Mates to Model #1581, 2854 or standard Banana Jack. • Cross and vertical stacking banana plug. • Ideal for providing jumpers or chassis boxes. MATERIALS: CONN: Extension Stacking Banana Plug |
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QQ-C-533, QQ-B-626, QQ-N-290 B-72-2 doc/01 Date08/30/99 | |
Contextual Info: SPICE Device Model SQM40N10-30 Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SQM40N10-30 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 |