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    MODEL Q2SD1858 NPN Search Results

    MODEL Q2SD1858 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8513
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    2SC5200
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=230 V / IC=15 A / hFE=55~160 / VCE(sat)=3.0 V / TO-3P(L) Visit Toshiba Electronic Devices & Storage Corporation

    MODEL Q2SD1858 NPN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    9578

    Abstract: MODEL Q2SD1858 NPN 2SD1858 model Q2SD1858 2SD1858 TR 104
    Contextual Info: SPICE PARAMETER 2SD1858 by ROHM TR Div. * Q2SD1858 NPN BJT model * Date: 2006/11/15 .MODEL Q2SD1858 NPN + IS=82.625E-15 + BF=169.40 + VAF=100 + IKF=9.9578 + ISE=82.625E-15 + NE=1.3933 + BR=12.165 + VAR=100 + IKR=14.121 + ISC=202.30E-15 + NC=2.6727 + RE=.1


    Original     		2SD1858 Q2SD1858 625E-15 30E-15 28E-12 576E-12 55E-12 801E-9 9578 MODEL Q2SD1858 NPN 2SD1858 model 2SD1858 TR 104 PDF