MODELING DEVICE POWER CONSUMPTION Search Results

Modeling Device Power Consumption

Abstract: AT6005
Contextual Info: Modeling Device Power Consumption Introduction The following provides a simple method for modeling the active and static power consumption of a AT6005 design. Active Power Consumption Active power consumption is a function of the distribution of resources in a

AT6005

Contextual Info: FPGA Modeling Device Power Consumption Introduction The following provides a simple method for modeling the active and static power consumption of a AT6005 design. Active Power Consumption Active power consumption is a function of the distribution of resources in a design and

AT6005

Contextual Info: FPGA Modeling Device Power Consumption Introduction The following provides a simple method for modeling the active and static power consumption of a AT6005 design. Active Power Consumption Active power consumption is a function of the distribution of resources in a design and the number of nets switching

Position Estimation

Contextual Info: White Paper FPGA Power Management and Modeling Techniques Introduction As designs get larger and add more system functions implemented on FPGAs, and as the advanced silicon process technology moves into smaller geometries, power consumption is increasingly a concern for today’s FPGAs. When

351nF DesignCon 2010 Analysis FPGA Noise Propagation Package Modeling Altera Corporation

Abstract: 400um XCItepi powersi 50GHZ 351nF Design Seminar Signal Transmission Fabrication process steps metal core pcb
Contextual Info: DesignCon 2010 Analysis of FPGA PDN Noise Propagation by Die & Package 3D Modeling Zhe Li, Altera Corporation ZLI@altera.com Dr. Hong Shi, Altera Corporation hshi@altera.com Kenneth Kwan, Altera Corporation kkwan@altera.com Dr. John Y. Xie, Altera Corporation

LTE baseband chip

Abstract: Serial RapidIO LTE baseband RapidIO vita CPS-10Q gen2 LTE Receiver VITA46
Contextual Info: semiconductor solutions ® Serial RapidIO —The Second Generation ® Serial RapidIO Gen2 solutions from IDT increase performance, reduce power consumption, and lower design costs. Feature enhancements IDT is enhancing many features in its RapidIO 1.3 offering as we bring Gen2

FLUKE 8840a

Abstract: FIR FILTER implementation xilinx FLUKE 23 structure of clb lcd graphics display 64128 fluke 23 data sheet Xilinx counter EPF10K100A EPF10K100ARC240-3 XC4000
Contextual Info: Power Measurements: FLEX 10KA vs. XC4000 Devices T E C H N I C A L B R I E F 4 1 M A R C H 1 9 9 8 Many factors, such as supply voltage, current consumption, die size, and routing structure, affect semiconductor power consumption. For devices with the same supply voltages, the device current

E3648

Abstract: GPIB/USB thermal simulation of IC package CG635 oscilloscope schematic EAS 200
Contextual Info: DesignCon 2008 Modeling FPGA Current Waveform and Spectrum and PDN Noise Estimation Iliya Zamek, Altera Corporation izamek@altera.com, 408-544-8116 Peter Boyle, Altera Corporation pboyle@altera.com, 408-544-6939 Zhe Li, Altera Corporation ZLI@altera.com, 408-544-7762

FLUKE 8840a

Abstract: Dual-Port RAM ep20k100 board "Dual-Port RAM" FLUKE 75 lcd graphics display 64128 Xilinx XCV150 fluke 77 EP20K100 EP20K100E
Contextual Info: Power Consumption Comparison: APEX 20K vs. Virtex Devices Technical Brief 57 October 1999, ver. 1 Introduction Altera Corporation 101 Innovation Drive San Jose, CA 95134 408 544-7000 http://www.altera.com https://websupport.altera.com Many factors, such as supply voltage, current consumption, die size, and routing structure,

NELCO-4000-13

Abstract: hfss tdr HFTA-05 AN-596-1 Nelco4000-13 pcb fabrication process Nelco-4000 backplane design card fci 10Gbase-kr backplane connector
Contextual Info: AN 596: Modeling and Design Considerations for 10 Gbps Connectors AN-596-1.0 March 2010 This application note discusses the impact of backplane connectors on a 10 Gbps serial channel performance. It demonstrates how to project the connector’s impact at

3g call flow

Abstract: 24ghz radar sensors 180NM uwb radar ckt uwb transceiver 3g data call flow 802.11n transceiver sensor radar uwb uwb radar uwb radar sensor
Contextual Info: Foundry Solutions IBM and Cadence collaborate to accelerate silicon-accurate design of advanced RF integrated circuits. frequencies and smaller process Highlights geometries of integrated wireless designs produce additional parasitic Wireless explosion drives demand

Contextual Info: RapidIO Gen 2 System Modeling Tool Product Brief Tool Overview and Benefits •        IDT® RapidIO Tool for proactively architect embedded systems networks using RapidIO Analyze traffic under different network loading scenarios in advance of

efuse OTP

Abstract: schematic diagram of bluetooth receiver FUJITSU single mosfet FUJITSU mosfet efuse rf sampler bluetooth transceiver MOSFET 90nm
Contextual Info: RFCMOS Case Study: Orca Systems’ 1st-pass Functional Silicon Success with Fujitsu CMOS 90nm Technology “When you’re designing a new type of digital architecture, it’s vital to know that final silicon will match simulation results. The results we got with Fujitsu’s 90nm PDK are

SPICE model for UC3844

Abstract: UC3843 spice model tl494 spice model EB407 Basic Halogen Converter MTP2N10 180V - 240V igbt dimmer UC3845 pspice model mosfet cross reference spice model moc3061 uc3843 flyback supply opto-coupler
Contextual Info: BR1522/D Rev. 2, Aug-2000 Technical Literature Selector Guide and Cross Reference ON Semiconductor A Listing and Cross Reference of Available Technical Literature from ON Semiconductor ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

bt 2323

Abstract: code for sms sending using pic midi keyboard yamaha midi keyboard midi keyboard interface midi sound generator block ifft TMS320C32 sms pic Split-Radix
Contextual Info: Implementing Real-Time MIDI Music Synthesis Algorithms, ABS/OLA, and SMS for the TMS320C32 DSP APPLICATION REPORT: SPRA355 Authors: Susan Yim yim@hc.ti.com Yinong Ding (ding@hc.ti.com) E.Bryan George (george@hc.ti.com) DSP Research and Development Center

tn0008

Abstract: mobile ddr2 TN-00-08 micron BGA SDRAM
Contextual Info: TN-00-08: Thermal Applications Introduction Technical Note Thermal Applications Introduction This technical note defines a general method and the criteria for measuring and ensuring that Micron memory components and modules do not exceed the maximum allowable temperature. The specified temperatures will help ensure the reliability and

SPRA355

Abstract: pic midi Split-Radix TMS320 TMS320C30 TMS320C32 TMS320C3X MIDI WAVETABLE DSP yamaha ic code for sms sending using pic
Contextual Info: Implementing Real-Time MIDI Music Synthesis Algorithms, ABS/OLA, and SMS for the TMS320C32 DSP APPLICATION REPORT: SPRA355 Authors: Susan Yim yim@hc.ti.com Yinong Ding (ding@hc.ti.com) E.Bryan George (george@hc.ti.com) DSP Research and Development Center

Fast Analytical Modeling of Dynamic Thermal Behavior of Semiconductor Devices and Circuits

Abstract: 1033A1
Contextual Info: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 61, NO. 4, APRIL 2014 1031 Fast Analytical Modeling of Dynamic Thermal Behavior of Semiconductor Devices and Circuits Kai H. Kwok, Senior Member, IEEE, and Vincenzo d’Alessandro Abstract— This paper presents a set of closed-form analytical

MTTF Intel

Contextual Info: Manufacturing Operations System Design and Analysis C. Hilton Manufacturing Strategic Support Technology and Manufacturing Engineering, Intel Corp. Index words: factory, manufacturing, discrete-event, simulation, modeling Abstract This paper describes manufacturing operations design

Contextual Info: World Leader in ASICs • GEC P lessey Semiconductors GPS has one of the w idest ranges of state-of-the-art technologies in the world. Add global manufacturing, design and customer service centres, and you can see why we deliver fast and cost effective solutions

Will CMOS Amplifiers Ever Kick-GaAs?

Abstract: wireless communication paper presentation
Contextual Info: Will CMOS Amplifiers Ever Kick-GaAs? Invited P.J. Zampardi Skyworks Solutions, Inc Abstract- In this paper, we present a discussion and comparison of CMOS and GaAs HBT technologies for handset power amplifiers. Our perspective is unique to other comparisons in

Willamette

Abstract: project transistor tester
Contextual Info: Intel Technology Journal Q1’99 Defect-Based Test: A Key Enabler for Successful Migration to Structural Test Sanjay Sengupta, MPG Test Technology, Intel Corp. Sandip Kundu, MPG Test Technology, Intel Corp. Sreejit Chakravarty, MPG Test Technology, Intel Corp.

PC5004

Abstract: VGC650 VGC6P52 VGC600 IN01D1 NR02D1 QFP 128 bonding
Contextual Info: V L S I T ech n o lo gy, inc. O.6-MICRON _ ASIC PRODUCT FAMILY GENERAL SPECIFICATIONS FEATURES BENEFITS • 0.6-micron 0.55-micron effective two- and three-layer metal CMOS technology. Typical 2-input NAND (FO=2) spec - 5 V (4.5 to 5.5 V): 190 ps, 2.6 nW/MHz

tsi578

Abstract: backplane cps-16 Tsi577 Tsi572 CPS-6Q Tsi574 sonar block diagram CPRI wireless switch diagram lte reference design
Contextual Info: semiconductor solutions IDT RapidIO 1.3 Switch Portfolio ® Serial RapidIO solutions from Integrated Device Technology, Inc. increase performance, reduce power consumption, and lower design costs. ® RapidIO® Overview • Forward compatible with RapidIO Gen2