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    MOS 2516 Search Results

    MOS 2516 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK423G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK401G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E Visit Toshiba Electronic Devices & Storage Corporation
    TCK420G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G
    Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    MOS 2516 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SED1181FLA

    Abstract: SED1191F SED1278F SED1278 sed1191 S-MOS SYSTEMS INC lcd sed1191f sed1181 S-MOS Systems HD44780
    Contextual Info: SED1181 CMOS DOT MATRIX EXTENSION LCD DRIVER 331-1.0 S-MOS Systems, Inc. • 2460 North First Street • San Jose, CA 95131 • Tel: 408 922-0200 • Fax: (408) 922-0238 1 – THIS PAGE INTENTIONALLY BLANK 2 S-MOS Systems, Inc. • 2460 North First Street • San Jose, CA 95131 • Tel: (408) 922-0200 • Fax: (408) 922-0238


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    SED1181 SED1181FLA SED1191F SED1278F SED1278 sed1191 S-MOS SYSTEMS INC lcd sed1191f sed1181 S-MOS Systems HD44780 PDF

    Contextual Info: SED1181 CMOS DOT MATRIX EXTENSION LCD DRIVER S-MOS Systems, I nc. • 2460 North First Street • San Jose, CA 95131 • Tel: 408 922-0200 • Fax: (408) 922-0238 • I 7R32R0R 0 0 0 4 3 2 7 027 ■ THIS PAGE INTENTIONALLY BLANK S-MOS Systems, Inc. • 2460 North First Street • San Jose, CA 95131 • Tel: (408) 922-0200 • Fax: (408) 922-0238


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    SED1181 7R32R0R PDF

    2546-5

    Abstract: Q67100-H5092 Q67100-H5095 Q67100-H5096 Q67100-H5101 AM Transmitter block diagram
    Contextual Info: Nonvolatile Memory 1-Kbit E2PROM SDA 2516-5 Preliminary Data MOS IC Features ● Word-organized reprogrammable nonvolatile memory ● ● ● ● ● ● ● ● ● in n-channel floating-gate technology E2PROM 128 x 8-bit organization Supply voltage 5 V


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    Q67100-H5092 2546-5 Q67100-H5092 Q67100-H5095 Q67100-H5096 Q67100-H5101 AM Transmitter block diagram PDF

    SIEMENS BSt L 45 100

    Abstract: 0D4T
    Contextual Info: bOE ] • flE3SbDS DD4T371 274 M S I E S SIEM ENS SIEMENS AKTIENGESELLSCHAF Nonvolatile Memory 1-Kbit E2PROM with I 2C Bus SDA 2516-2 Preliminary Data MOS IC Features • W ord-organized, reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM)


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    DD4T371 SIEMENS BSt L 45 100 0D4T PDF

    Q67100-H5092

    Abstract: SDA 2516-5
    Contextual Info: Nonvolatile Memory 1-Kbit E2PROM SDA 2516-5 Preliminary Data MOS IC Features ● Word-organized reprogrammable nonvolatile memory ● ● ● ● ● ● ● ● ● in n-channel floating-gate technology E2PROM 128 x 8-bit organization Supply voltage 5 V


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    Q67100-H5092 Q67100-H5092 SDA 2516-5 PDF

    UEI 20 SP

    Abstract: 2516 prom JE350
    Contextual Info: S IE M E N S Nonvolatile Memory 1-Kbit E2PROM with I2C Bus SD A 2516-2 Preliminary Data MOS IC Features • Word-organized, reprogrammable nonvolatile memory In n-channel floating-gate technology E2PROM • 128 x 8 bit organization • Supply voltage 5 V


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    Q67100-H5002 UEI 20 SP 2516 prom JE350 PDF

    TA 8178

    Abstract: 8178 BU 3150 osc 59-22 8178 y 8110
    Contextual Info: データ・シート MOS 集積回路 MOS Integrated Circuit µ PD16680 1/53,1/40 デューティ RAM 内蔵コントローラ/ドライバ µPD16680 は,フルドット LCD の表示が可能な RAM 内蔵のドライバです。この IC は 1 チップで 100x51 ドット


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    PD16680 RAM100 RAM100 PD16680W/P S12694JJ2V0DS00 S12694JJ2V0DS00 COM51 53-bit TA 8178 8178 BU 3150 osc 59-22 8178 y 8110 PDF

    2516 memory

    Contextual Info: SIEMENS Nonvolatile Memory 1-Kbit E2PROM with I2C Bus Interface SDA 2516 MOS IC Features W ord-organized reprogram mable nonvolatile memory in n-channel floating-gate technology E2PROM 128 x 8-bit organization Supply voltage 5 V Serial 2-line bus for data input and output (12C Bus)


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    25X16-5 25X16 Q67100-H5092 67100-H3252 67100-H3255 67100-H3256 2516 memory PDF

    TMS4464

    Abstract: TMS 2764 Texas Instruments IC mk4564 mcm6256 tms4500a Fuji Electric tv schematic diagram ET 439 power module fuji mcm6665 74L5138 TMS4500
    Contextual Info: SMYOOO2 . ,MOS Memory Data Book 1984 II I III \' h' \/ Commercial and Military , :\ Specifications ' 1'/ ! . .Jf TEXAS INSTRUMENTS Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide _ Glossary/Timing Conventions/Data Sheet Structure


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    SMYD002 o184-464PP-142M iS-146 TMS4464 TMS 2764 Texas Instruments IC mk4564 mcm6256 tms4500a Fuji Electric tv schematic diagram ET 439 power module fuji mcm6665 74L5138 TMS4500 PDF

    Contextual Info: SIEMENS Nonvolatile Memory 1-Kbit E2PROM SDA 2516-5 Preliminary Data MOS IC Features • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 128 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)


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    Q67100-H5092 B235b05 0Gb3272 PDF

    Q67100-H5092

    Abstract: SDA 2516-5
    Contextual Info: S IE M E N S Nonvolatile Memory 1-Kbit E2PROM SDA 2516-5 Preliminary Data MOS IC Features • • • • • • • • • • W ord-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM 128 x 8-bit organization Supply voltage 5 V


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    Q67100-H5092 00b3272 SDA 2516-5 PDF

    K4096

    Abstract: Motorola 6830 M 2530 motorola KS 2102 intel 2101 INTEL 1404A Signetics 2518 AM9216 9316A 2627 "cross reference"
    Contextual Info: S ig n e tic s Memories MOS RAMs AM D A M 2 1 01/9101 A M 2 1 11/9111 A M 2 1 12/9112 A M 2 1 0 2 /9 1 0 2 AM 9060 AM 9216 AM 9208 A M 1402 A M 1403 A M 1404 A M 1405 A M 1506 A M 1507 A M 2806 A M 280 7 AM 2808 AM 2809 AM 2833 MOS M E M O R Y CROSS R E FER EN C E


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    AM2101/9101 AM2111/9111 AM2112/9112 AM2102/9102 AM9060 AM9216 AM9208 AM1402 AM2807 AM2808 K4096 Motorola 6830 M 2530 motorola KS 2102 intel 2101 INTEL 1404A Signetics 2518 AM9216 9316A 2627 "cross reference" PDF

    ic vertical la 78141

    Abstract: IC LA 78141 schematic LA 78141 tv application circuit 4116 ram tda 78141 TMS4500 LA 78141 VERTICAL 21L14 mitsubishi elevator circuit diagram 4464 64k dram
    Contextual Info: MOS Memory Data Book 1984 Commercial and Military Specifications ♦ Texas In str u m en ts Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide Glossary/Timing Conventions/Data Sheet Structure Dynamic RAM and Memory Support Devices


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    CH-8953 ic vertical la 78141 IC LA 78141 schematic LA 78141 tv application circuit 4116 ram tda 78141 TMS4500 LA 78141 VERTICAL 21L14 mitsubishi elevator circuit diagram 4464 64k dram PDF

    mm74c935

    Abstract: ADD3501CCN add3501 5 DIGIT dvm RC100F
    Contextual Info: ADD3501 S3 National éLM Semiconductor ADD3501 31/ 2 Digit DVM with Multiplexed 7-Segment Output General Description Features The ADD3501 monolithic DVM circuit is manufactured using standard complementary MOS CMOS technology. A pulse modulation analog-to-digital conversion technique is used


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    ADD3501 ADD3501 NS65388 mm74c935 ADD3501CCN 5 DIGIT dvm RC100F PDF

    mm74c935

    Abstract: ADD3501CCN 2-DIGIT 7-SEGMENT LED DISPLAY schematic diagram
    Contextual Info: ADD3501 03 National m M Semiconductor ADD3501 31/2 Digit DVM with Multiplexed 7-Segment Output General Description Features The ADD3501 monolithic DVM circuit is manufactured using standard complementary MOS CMOS technology. A pulse modulation analog-to-digital conversion technique is used


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    ADD3501 ADD3501 TL/H/5681 mm74c935 ADD3501CCN 2-DIGIT 7-SEGMENT LED DISPLAY schematic diagram PDF

    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Contextual Info: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


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    PDF

    2650B

    Abstract: wf vqc 10d alu 9308 d Signetics 2650 SN52723 2650 cpu 82S103 pipbug Signetics NE561 cd 75232
    Contextual Info: flcnCTICf ßii>ouiR/mos fflICROPROCEÍSOR DATfl mnnuni SIGNETICS reserves the right to make changes in the products contained in this book in order to improve design or performance and to supply the best possible products. Signetics also assumes no responsibility for the


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    PDF

    eprom 2516

    Abstract: 2516 eprom 2516 eprom texas TMS2516 2516-35 tms4016 2516 ansi y32 2516-45
    Contextual Info: MOS LSI TMS 2516-25 JL, TMS 2516-35 JL AND TMS 2516-45 JL 16,384-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES D E C E M B E R 1 9 7 9 - R E V IS E D M A Y 1982 • Organization . . . 2 0 4 8 X 8 • Pin Compatible with Existing ROMs and EPROMs 16K, 32K , and 64K


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    384-BIT 1979-REVISED 24-PIN eprom 2516 2516 eprom 2516 eprom texas TMS2516 2516-35 tms4016 2516 ansi y32 2516-45 PDF

    NMC2564

    Abstract: 2532 prom
    Contextual Info: NMC2564 National MOS EPROMs PREVIEW Semiconductor NMC2564 64k-Bit 8k x 8 UV Erasable PROM General Description Features The NMC2564 is a 65,536-bit EPROM operating from a , • Single 5V power suppiy ') single 5V power supply. This device is an ultraviolet ■ 450 ns max access time


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    NMC2564 64k-Bit 536-bit 0510s A0-A12 2532 prom PDF

    s2516

    Abstract: 384-BIT 2516 eprom texas
    Contextual Info: MOS LSI TMS2516, SMJ2516 16,384-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES DECEMBER 1 9 7 9 - Organization . . . 2 0 4 8 X 8 TM S 25 16 . . . JL PACKAGE SM J2516 . . . J PACKAGE TOP VIEW Single + 5-V Power Supply Pin Compatible with Existing ROMs and EPROMs (16K, 32K, and 64K)


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    TMS2516, SMJ2516 384-BIT J2516 s2516 2516 eprom texas PDF

    C 5763 transistor

    Abstract: C 5763 NEC 2403 ic 817 LCD 1620 datasheet transistor current booster circuit 8178 n nec 817 sck 104 thermistor B 817
    Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT µPD16680 1/53,1/40 DUTY, LCD CONTROLLER / DRIVER WITH BUILT- IN RAM µPD16680 is a driver which contains a RAM capable of full - dot LCD display. A single µPD16680 IC chip can operate a full - dot up to 100 by 51 dots LCD and pictographs (100 pictographs).


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    PD16680 PD16680 C 5763 transistor C 5763 NEC 2403 ic 817 LCD 1620 datasheet transistor current booster circuit 8178 n nec 817 sck 104 thermistor B 817 PDF

    HN462532G

    Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
    Contextual Info: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .


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    sck 138 thermistor

    Abstract: IC 4050 DATA SHEET thermistor SCK 253 sck 103 thermistor NEC 2403 SCK 206 thermistor ic 817 4083-2 Ic 8110 data pin f 4556
    Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD16680 1/53, 1/40 DUTY, LCD CONTROLLER/DRIVER WITH BUILT-IN RAM DESCRIPTION The µPD16680 is a driver which contains a RAM capable of full - dot LCD display. The single µPD16680 IC chip can operate a full - dot up to 100 by 51 dots LCD and pictographs (100 pictographs).


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    PD16680 PD16680 sck 138 thermistor IC 4050 DATA SHEET thermistor SCK 253 sck 103 thermistor NEC 2403 SCK 206 thermistor ic 817 4083-2 Ic 8110 data pin f 4556 PDF

    CM2150

    Abstract: 415V Power circuit design 2516N 64X6X8 led matrix 5x7 coding Signetics TTL AS11 A2916
    Contextual Info: S îQ IIB t iE S CHARACTER GENERATOR 2516 SILICON GATE MOS 2500 SERIES DESCRIPTION SILICO N E PACKAGING T h e Signetics 2 6 1 6 i> a 30 72-b it S ta tic R O M organized as L o w cost silico ne D IP packaging is implem ented and reli* 6 4 x 6 x 8 . T h e p rod uct uses + 5 V , - S V and - 1 2 V pow er sup­


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    64X6X8 3072-bit 64x6x8. 2616/CM 24-PIN CM2150 415V Power circuit design 2516N led matrix 5x7 coding Signetics TTL AS11 A2916 PDF