TMS4464
Abstract: TMS 2764 Texas Instruments IC mk4564 mcm6256 tms4500a Fuji Electric tv schematic diagram ET 439 power module fuji mcm6665 74L5138 TMS4500
Text: SMYOOO2 . ,MOS Memory Data Book 1984 II I III \' h' \/ Commercial and Military , :\ Specifications ' 1'/ ! . .Jf TEXAS INSTRUMENTS Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide _ Glossary/Timing Conventions/Data Sheet Structure
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SMYD002
o184-464PP-142M
iS-146
TMS4464
TMS 2764 Texas Instruments IC
mk4564
mcm6256
tms4500a
Fuji Electric tv schematic diagram
ET 439 power module fuji
mcm6665
74L5138
TMS4500
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ay-5-1012
Abstract: ali m 3329 PROCESSOR ALI 3329 ali 3329 b ali 3329 SN74188 sn74s188 str 52100 SN7452 replacement of bel 187 transistor
Text: GENERAL INFORMATION lie of Contents • Alphanumeric Index • Selection Guides • Glossary INTERCHANGEABiliTY GUIDE MOS MEMORIES TTL MEMORIES ECl MEMORIES MICROPROCESSOR SUMMARY 38510/MACH IV PROCUREMENT SPECIFICATION JAN Mll-M-38510 INTEGRATED CIRCUITS
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38510/MACH
Mll-M-38510
Z501300
Z501200
Z501201
Z012510
ZOl1510
ay-5-1012
ali m 3329
PROCESSOR ALI 3329
ali 3329 b
ali 3329
SN74188
sn74s188
str 52100
SN7452
replacement of bel 187 transistor
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DIN527
Abstract: TC58NS512DC
Text: TC58NS512DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 512-MBIT 64M x 8 BITS CMOS NAND E PROM (64M BYTE SmartMedia ) DESCRIPTION The TC58NS512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable
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TC58NS512DC
512-MBIT
TC58NS512
528-byte
528-byte
DIN527
TC58NS512DC
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TH58NVG2S3
Abstract: TH58NVG2S3BFT00 TH58NVG toshiba TH58NVG th58 th58nv toshiba nand plane size TH58NVG2S MOS 4016 PSL 26
Text: TH58NVG2S3BFT00/TH58NVG2S8BFT00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT/256M × 16 BIT CMOS NAND E PROM DESCRIPTION The TH58NVG2SxB is a single 3.3 V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable
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TH58NVG2S3BFT00/TH58NVG2S8BFT00
BIT/256M
TH58NVG2SxB
2112-byte/1056-word
2112-byte
003-10-30A
TH58NVG2S3
TH58NVG2S3BFT00
TH58NVG
toshiba TH58NVG
th58
th58nv
toshiba nand plane size
TH58NVG2S
MOS 4016
PSL 26
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Untitled
Abstract: No abstract text available
Text: TC58NS512ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 512-MBIT 64M x 8 BITS CMOS NAND E PROM (64M BYTE SmartMedia ) DESCRIPTION The TC58NS512A is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable
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TC58NS512ADC
512-MBIT
TC58NS512A
528-byte
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TH58NS512DC
Abstract: No abstract text available
Text: TH58NS512DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512-MBIT 64M x 8 BITS CMOS NAND E PROM (64M BYTE SmartMedia TM ) DESCRIPTION The TH58NS512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable
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TH58NS512DC
512-MBIT
TH58NS512
528-byte
528-byte
FDC-22C
TH58NS512DC
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Untitled
Abstract: No abstract text available
Text: TC58NS512DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512-MBIT 64M x 8 BITS CMOS NAND E PROM (64M BYTE SmartMedia TM ) DESCRIPTION The TC58NS512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable
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TC58NS512DC
512-MBIT
TC58NS512
528-byte
FDC-22A
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DIN527
Abstract: TC58NS512DC tr512
Text: TC58NS512DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 512-MBIT 64M ´ 8 BITS CMOS NAND E PROM (64M BYTE SmartMedia ) DESCRIPTION The TC58NS512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable
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Original
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PDF
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TC58NS512DC
512-MBIT
TC58NS512
528-byte
528-byte
DIN527
TC58NS512DC
tr512
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working and block diagram of ups
Abstract: DIN527 TC58NS512ADC TC58NS512DC
Text: TC58NS512ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 512-MBIT 64M u 8 BITS CMOS NAND E PROM (64M BYTE SmartMedia DESCRIPTION ) The TC58NS512A is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable
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TC58NS512ADC
512-MBIT
TC58NS512A
528-byte
528-byte
working and block diagram of ups
DIN527
TC58NS512ADC
TC58NS512DC
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DIODE 4008
Abstract: 4018B APT4016BN APT4018BN 4016BN
Text: D TO-247 G S POWER MOS IV APT4016BN 400V 31.0A 0.16Ω APT4018BN 400V 29.0A 0.18Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage
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O-247
APT4016BN
APT4018BN
4016BN
4018BN
O-247AD
DIODE 4008
4018B
4016BN
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MOS 4016
Abstract: T4016B T40-16B
Text: A dvanced P ow er Te c h n o l o g y A P 400 ' 4016 T B V R 27A 0 160 2 V . Í POWER MOS V Power MOS V is a new generation of high voltage N-Channei enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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O-247
APT4016BVR
MIL-STD-75Q
O-247AD
MOS 4016
T4016B
T40-16B
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853f
Abstract: 4007D 4011d MEM780P 4016P 4007F MEM855P mu-6-0103 855F MEM851P
Text: MOSFETs C/MOS & MULTIFET DEVICES COMPOSANTS MOSFÈTs C/MOS & MULTIFET MOSFETs C/MOS & MULTIFET BAUELEMENTE MULTIFET SW ITCHES ELECTRICAL CHARACTERISTICS No. Part Ho. # *M EM 780P * M EM 780D * M EM 780F JF*MEM 851P *M EM 851D *M EM 851F ‘ M EM 853P *M EM 853D
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4950D
4950F
4900P
4900D
4900F
4900S
853f
4007D
4011d
MEM780P
4016P
4007F
MEM855P
mu-6-0103
855F
MEM851P
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SGS-ATES l120
Abstract: National Semiconductor 4045 transistor bf 175 TAA611
Text: PROFESSIONAL SEMICONDUCTOR INTRODUCTION This databook contains data sheets on the SGS-ATES range of linear, MOS and COS/MOS integrated circuits intended for professional applications. The information on each product has been specially presented in order that the
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proton rx 4000 watts power amplifier circuit diagram
Abstract: RCA-CD401 cd22014 ICAN-6362 vogt 545 44 vogt inductor j9 570 17 013 20 RCA-CD4046B common cathode 7 SEGMENT DISPLAY LT 543 CD22014E CD22011
Text: RCA COS/MOS Integrated Circuits This DATABOOK contains complete technical information on RCA stand ard commercial COS/MOS integrated circuits. It covers the full line of RCA standard A- and B-series digital logic circuits, special-function circuits crosspoint switches and level shifters ,
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132nd
WA98121.
proton rx 4000 watts power amplifier circuit diagram
RCA-CD401
cd22014
ICAN-6362
vogt 545 44
vogt inductor j9 570 17 013 20
RCA-CD4046B
common cathode 7 SEGMENT DISPLAY LT 543
CD22014E
CD22011
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Untitled
Abstract: No abstract text available
Text: COS/MOS IN T E G R A T ED CIRCUITS 40/603 HCC/HCF HCC/HCF HCC/HCF HCC/HCF 40160 B 40161B 40162 B V . 401B3B - SYNCHRONOUS PROGRAMMABLE 4 -B IT COUNTERS 40160B - DECADE WITH ASYNCHRONOUS CLEAR 40161B - BINARY WITH ASYNCHRONOUS CLEAR 40162B - DECADE WITH SYNCHRONOUS CLEAR
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40161B
401B3B
40160B
40161B
40162B
40163B
QUIE40161B
40163B
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d4016c
Abstract: CD4016 4016C IC CD4016
Text: August 1989 Semiconductor C D 4016M /C D 4016C Q uad Bilateral S w itch General Description The CD4016M /CD4016C is a quad bilateral switch which utilizes P-channel and N-channel complementary MOS CMOS circuits to provide an extremely high “ O F F ” resist
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CD4016M/CD4016C
4016M
4016C
CD4016M
/CD4016C
d4016c
CD4016
IC CD4016
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Untitled
Abstract: No abstract text available
Text: INSTRUMENT AY-5-1016 AY-6-4016 Random/Sequential Access Multiplexers FEATURES • ■ ■ ■ ■ Directly interfaces with T T L/D T L and MOS Current or voltage modes of operation Random or sequential access Single ended or differential operation Expandable in either the sequential or random access
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AY-5-1016
AY-6-4016
AY-5-1016
AY-6-4016
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Untitled
Abstract: No abstract text available
Text: O D O S A dvanced P o w er Te c h n o l o g y GFWER MOS ¡TE APT4016BN 400V 31.0A 0.16U APT4018BN 400V 29.0A 0.18Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 4016BN APT 4018BN
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APT4016BN
APT4018BN
4016BN
4018BN
APT4016/4018BN
O-247AD
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ic vertical la 78141
Abstract: IC LA 78141 schematic LA 78141 tv application circuit 4116 ram tda 78141 TMS4500 LA 78141 VERTICAL 21L14 mitsubishi elevator circuit diagram 4464 64k dram
Text: MOS Memory Data Book 1984 Commercial and Military Specifications ♦ Texas In str u m en ts Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide Glossary/Timing Conventions/Data Sheet Structure Dynamic RAM and Memory Support Devices
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CH-8953
ic vertical la 78141
IC LA 78141 schematic
LA 78141 tv application circuit
4116 ram
tda 78141
TMS4500
LA 78141 VERTICAL
21L14
mitsubishi elevator circuit diagram
4464 64k dram
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Untitled
Abstract: No abstract text available
Text: A d va n ced P o w er Te c h n o l o g y 9 O D O S POWER MOS IV APT4016BN 400V 31.0A 0.16Q APT4018BN 400V 29.0A 0.180 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIM UM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT APT 4016BN
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APT4016BN
APT4018BN
4018BN
4016BN
APT4016/4018BN
O-247AD
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HC165A
Abstract: TC9525F VHC165 TC9534N HC4050A HC4520A TC8215uf HC4049A TC24SC HCT164A
Text: MOS Industrial ICs AD Converter - je Conversion Resolution Time Type No. Conversion Mode Input Channel TC5090AP 8b it 2ms Integration method 1 TC5091AP Bbit 2ms " 6 TC5092AP 13bit 8.2ms ’ 8 TC5093AP 8b it 50ps Successive approximation 8 Output Formst
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TC5090AP
TC5091AP
TC5092AP
TC5093AP
TC35094P
TC35095AP/AF
TC35096AP/AF
TC35097AP
TC35098AP
TC35080P
HC165A
TC9525F
VHC165
TC9534N
HC4050A
HC4520A
TC8215uf
HC4049A
TC24SC
HCT164A
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transistor cross reference
Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC
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MM4220DF/MM5220DF
Abstract: mm5221 MM4240 DS8807 MM5017 54S287 MM1402a equivalent transistor bf 175 MM74C920 MM5061
Text: Edge Index by Product Family NATIONAL This is National's first Memory handbook containing information on MOS and Bipolar Memory Components, Systems, Application Notes and Support Circuits. For detailed information on Interface Circuits and other major product lines, contact a National sales office, representative, or distributor.
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360746lat
MM4220DF/MM5220DF
mm5221
MM4240
DS8807
MM5017
54S287
MM1402a equivalent
transistor bf 175
MM74C920
MM5061
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c 64016
Abstract: AY-6-4016
Text: Gl M U A I INST RI M l M AY-5-1016 AY-6-4016 Random/Sequential Access Multiplexers FEATURES • ■ ■ ■ ■ D ire ctly interfaces w ith T T L /D T L and MOS C urre n t o r voltage m odes o f operation Random o r sequential access S ingle ended o r diffe re ntia l operation
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AY-5-1016
AY-6-4016
AY-5-1016
AY-6-4016
c 64016
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