MOS 4016 R ON Search Results

MOS 4016

Abstract: T4016B T40-16B
Contextual Info: A dvanced P ow er Te c h n o l o g y A P 400 ' 4016 T B V R 27A 0 160 2 V . Í POWER MOS V Power MOS V is a new generation of high voltage N-Channei enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

c 64016

Abstract: AY-6-4016
Contextual Info: Gl M U A I INST RI M l M AY-5-1016 AY-6-4016 Random/Sequential Access Multiplexers FEATURES • ■ ■ ■ ■ D ire ctly interfaces w ith T T L /D T L and MOS C urre n t o r voltage m odes o f operation Random o r sequential access S ingle ended o r diffe re ntia l operation

4016 ic

Contextual Info: COS/MOS INTEGRATED CIRCUIT QUAD • • • • • • • • • • • • • • • A o \ t , * > h c c îh c f « m b B IL A T E R A L S W IT C H 20V D IG IT A L OR ± 10V P E A K -T O -P E A K SW ITCHING 2 8 0 « T Y P IC A L ON RESISTANCE FOR 15V O PE R ATIO N

IC 4016 PIN DIAGRAM

Abstract: pin diagram of ic 4016 ic 4016 CI 4016 4016be for IC 4016 HA 4016 MOS 4016 4016 PIN DIAGRAM hct 4016
Contextual Info: COS/MOS , INTEGRATED CIRCUIT A a , h c c /h c f « H 6 B Q U A D B IL A T E R A L SWITCH • • • • • • • • • • • • • • • 2 0 V D IG IT A L O R ± 1 0 V P E A K -T O -P E A K S W IT C H IN G 2 8 0 n T Y P IC A L O N R E S IS T A N C E FO R 15 V O P E R A T IO N

Contextual Info: R&E INTERNATIONAL, INC 441GB CMOS QUAD ANALOG SWITCH FEATURES ♦ DPDT Switch Operation W ithout External Logic ♦ Wide Range of Digital and Analog Signal Levels — Digital or Analog Signal to 18 Volts peak ♦ Low ON Resistance — 200 Q typ. over 15Vp.p Signal Input Range,

vlf 12.5 kHz schematic

Abstract: 4416B 4000B 4016B MAXIMUM ANALOG SWITCH DPDT
Contextual Info: 4416B INTERNATIONAL, INC. CMOS QUAD ANALOG SWITCH FEA TU R ES ♦ DPDT Switch Operation Without External Logic ♦ Wide Range of Digital and Analog Signal Levels — Digital or Analog Signal to 18 Volts peak ♦ Low ON Resistance — 200 f í typ. over 15Vp.p Signal Input Range,

ICL7660S

Abstract: ICL7660 equivalent HI7188 ICL7660
Contextual Info: Using the HI7188 with a Single Supply Application Note May 1996 AN9620 Author: John D. Norris Introduction ICL7660S Voltage Converter The HI7188 is an easy-to-use, 16-bit, 8-channel, sigma-delta A/D subsystem ideal for low frequency physical and electrical

icl7660 harris

Abstract: HI7188 ICL7660 ICL7660S ICL7660 equivalent
Contextual Info: Harris Semiconductor No. AN9620 Harris Data Acquisition May 1996 Using the HI7188 with a Single Supply Author: John D. Norris Introduction ICL7660S Voltage Converter The HI7188 is an easy-to-use, 16-bit, 8-channel, sigma-delta A/D subsystem ideal for low frequency physical and electrical

cmos 4000 series

Abstract: mhb 4011 cmos 4016 transistor 2248 CMOS 4024 with truth table working of IC 4017 MH 7400 4017-DECADE COUNTER mhb 4013 MHB 4012
Contextual Info: - ¿V 'V â - -—• c^ö ö 0 0 5388 FERRANTI INTERDESIGN, INC. . " . H I ^^M ffS E R IE S HIGH VOLTAGE SILICON GATE CMOS ARRAYS FEATURES • Oxide Isolated Polysilicon Gate CM OS Technology. • 3V to 15V Specified Operating Voltage. • Operation up to 40MHz at 15V, 15M Hz at 5V.

ferranti array

Contextual Info: MH SERIES FERRANTI INTERDESIGN, INC. HIGH VOLTAGE SILICON GATE CMOS ARRAYS FEATURES • Oxide Isolated Polysilicon Gate CM OS Technology. • 3V to 15V Specified Operating Voltage. • Operation up to 40MHz at 15V, 15MHz at 5V. • 8 Arrays Ranging from 70 to 1600 Two Input

SGS-ATES l120

Abstract: National Semiconductor 4045 transistor bf 175 TAA611
Contextual Info: PROFESSIONAL SEMICONDUCTOR INTRODUCTION This databook contains data sheets on the SGS-ATES range of linear, MOS and COS/MOS integrated circuits intended for professional applications. The information on each product has been specially presented in order that the

TH58512FT

Contextual Info: TOSHIBA TH58512FT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE 512-MBIT 64M X SILICON GATE CMOS 8 BITS CMOS NAND E2PROM DESCRIPTION The TH58512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes X 32 pages X 4096 blocks.

TH58NVG2S3BTG00

Abstract: th58nvg th58nvg2s3btg TH58NVG2S3 PSL 26 DIN2111 PA15 PA16 th58nvg*t TH58NVG2S3B
Contextual Info: TH58NVG2S3BTG00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM Lead-Free DESCRIPTION The TH58NVG2S3B is a single 3.3 V 4Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096 blocks.

TSOP 48 Package nand memory toshiba

Abstract: 1076H CD 4016 PIN DIAGRAM TH58512FTI TH58512FT
Contextual Info: TH58512FTI TOSHIBA TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 512-MBIT 64M SILICON GATE CMOS X 8 BITS CMOS NAND E2PROM DESCRIPTION The TH58512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically E rasable and Programmable Read-Only Memory (NAND E 2PROM) organized as 528 bytes X 32 pages X 4096 blocks.

74LS189 equivalent

Abstract: 74LS200 AmZ8036 Z8104 74LS300 AM9511 Am2505 27s13 54S244 27LS00
Contextual Info: Advanced Micro Devices Condensed Catalog 1981 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products without notice in order to improve design or performance characteristics. The company assumes no responsibility for the use of any circuits described herein.

internal structure of ic 4017

Abstract: 4518 CI
Contextual Info: C2MOS Logic TC74HC/HCT Series 7. Common Electrical Characteristics 7-1 Power Dissipation The power dissipation of CMOS device is composed of two components: one static, the other dynamic.The total power dissipation is the sum of static and dynamic power dissipation.

internal structure of ic 4017

Abstract: 4518 CI increase the output of Ic 4017 4511 e 4518 CI
Contextual Info: 7. COMMON ELECT RICAL CHARACTERISTICS 7 -1 Pow er Dissipation The power dissipation of CMOS device is com posed of two com ponents: one static, the other dynam ic. The total power dissipation is the sum of static and dynam ic power dissipation. Static power dissipation is obtained by m ultiplying quiescent supply current by the supply voltage

CI 4066 vol

Abstract: 74HCT logic family specifications HCT CMOS family characteristics 74HCMOS MGK563 hcmos family CI 4016 74HCT Logic Family Specification CMOS Logic Family Specifications F TTL family characteristics
Contextual Info: INTEGRATED CIRCUITS DATA SHEET FAMILY SPECIFICATIONS HCMOS family characteristics March 1988 File under Integrated Circuits, IC06 Philips Semiconductors FAMILY SPECIFICATIONS HCMOS family characteristics A subset of the family, designated as XX74HCTXXXXX,

transistor KSD1 105

Contextual Info: SPLC701B 11x12 and 6x12 Text and Graphics Liquid Crystal Display Controller/Driver JAN. 05, 2005 Version 1.3 Sunplus Technology reserves the right to change this documentation without prior notice. Information provided by Sunplus Technology is believed to be

KSD1 180

Abstract: KSD1 65
Contextual Info: SPLC701B 11x12 and 6x12 Text and Graphics Liquid Crystal Display Controller/Driver MAY. 17, 2005 Version 1.5 Sunplus Technology reserves the right to change this documentation without prior notice. Information provided by Sunplus Technology is believed to be

HC-88

Abstract: hc81
Contextual Info: 7. COMMON E L E C T R IC A L C H A R A C T E R IS T IC S 7-1 Powtr Dissipation T h e pow er d issip a tio n of CMOS device is com posed of tw o com ponents: one s ta tic , the o th e r d y n am ic. T h e to ta l pow er d issip a tio n is the B u m of sta tic a n d d y n a m ic pow er d issip atio n .

TC58DVM92A3TA00

Abstract: TC58DVM92A3
Contextual Info: TC58DVM92A3TA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512-MBIT 64 M x 8 BITS CMOS NAND E PROM DESCRIPTION The device is a single 3.3 V 512-Mbit (553,648,128 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096 blocks. The device has a 528-byte

ic 6116 from texas instruments

Abstract: ma 6116 f6 transistor tic 2250 4016 static ram tms4016
Contextual Info: MILITARY CM O S SMJ5517 2048 WORD BY 8-BIT STATIC RAM LSI DECEMBER 1 9 8 3 SMJ5517 . . . JD PACKAGE 1 TOP VIEW 2K X 8 Organization. Common I/O Single + 5 -V Supply • Fully Static Operation (No Clocks, No Refresh) A7 C 1 ^ 2 4 H vcc 23 ] A 8 22 U A 9 21 D W

TC58DVM92A5BAJ3

Abstract: TC58DVM92A5 TC58DVM92A
Contextual Info: TC58DVM92A5BAJ3 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512-MBIT 64M x 8 BITS CMOS NAND E PROM DESCRIPTION The device is a single 3.3 V 512Mbit (553,648,128 bit) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096 blocks. The device has a 528-byte static