MOS 7A 600V Search Results

G3N60B3

Abstract: G3N60B HGT1S3N60B3 HGT1S3N60B3S HGTD3N60B3 HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3
Contextual Info: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 Semiconductor 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, TC = 25oC The HGTD3N60B3S, HGTD3N60B3, HGT1S3N60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high

G3N60B

Contextual Info: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 HADDIQ 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, T c = 2 5 °C The H GTD3N60B3S, HG TD3N 60B3, HG T1S3N 60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high

G3N60B3

Abstract: G3N60B HGTD3N60B3 TO-262AA equivalent
Contextual Info: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 S E M I C O N D U C T O R 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, TC = 25oC The HGTD3N60B3S, HGTD3N60B3, HGT1S3N60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high

G3N60B3

Contextual Info: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 HARRIS S E M I C O N D U C T O R 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, Tc = 2 5 °C The HGTD3N60B3S, H G TD3N 60B3, HGT1S3N60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high

SVD7N60F

Abstract: 7A SF 2TC2-5
Contextual Info: SVD7N60T/SVD7N60F 7A 600V N 2 SVD7N60T/F N MOS VDMOS 1 3 AC-DC H DC-DC 1. 2. 3. PMW 1 ∗ 7A 600V RDS on =1.2Ω@VGS=10V ∗ 1 23 23 TO-220F-3L TO-220-3L ∗ ∗ ∗ dv/dt SVD7N60T TO-220-3L SVD7N60T 50 / SVD7N60F TO-220F-3L SVD7N60F 50 / ( TC=25°C) SVD7N60T

HGT1S3N60B3S

Abstract: HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3
Contextual Info: HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Data Sheet January 2000 7A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.

SVD7N60F

Abstract: SVD7N60 SVD7n BVDSS VDS 30v ID70A svd7n60t 10vtD 7A SF TO-220-3L VDMOS
Contextual Info: SVD7N60T/SVD7N60F 7A 600V N 2 SVD7N60T/F N MOS TM S-Rin VDMOS 1 3 1. AC-DC H 2. 3. DC-DC PMW 1 ∗ 7A 600V RDS on ( 1 2 3 23 TO-220F-3L )=0.96Ω@VGS=10V TO-220-3L ∗ ∗ ∗ ∗ dv/dt SVD7N60T TO-220-3L SVD7N60T 50 / SVD7N60F TO-220F-3L SVD7N60F 50 / ( TC=25°C)

G3N60B3

Abstract: HGT1S3N60B3S HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3 RHRD460 2001 7a
Contextual Info: HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Data Sheet December 2001 7A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These

HGT1S3N60B3S

Abstract: HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3 RHRD460
Contextual Info: HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Data Sheet January 2000 7A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These

Contextual Info: • R r M APT6017WVR A d va n ced po w er Te c h n o l o g y 0.1 7a 600v 31 .sa POWER MOS V' Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: AOD7S65/AOU7S65 600V 7A α MOS TM Power Transistor General Description Product Summary The AOD7S65 & AOU7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

G3N60B3D

Abstract: mosfet 4414 HGT1S3N60B3DS HGT1S3N60B3DS9A HGTP3N60B3D RHRD460 TB334 7a600v
Contextual Info: HGTP3N60B3D, HGT1S3N60B3DS Data Sheet January 2000 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have

Contextual Info: AOD7S65/AOU7S65 600V 7A α MOS TM Power Transistor General Description Product Summary The AOD7S65 & AOU7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

AOD7S60

Abstract: aou7s60
Contextual Info: AOD7S60/AOU7S60 600V 7A α MOS TM Power Transistor General Description Product Summary The AOD7S60 & AOU7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

Contextual Info: AOD7S60/AOU7S60 600V 7A α MOS TM Power Transistor General Description Product Summary The AOD7S60 & AOU7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

HGT1S3N60B3DS

Abstract: HGT1S3N60B3DS9A HGTP3N60B3D RHRD460 TB334
Contextual Info: HGTP3N60B3D, HGT1S3N60B3DS Data Sheet December 2001 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the

Contextual Info: AOT7S60/AOB7S60/AOTF7S60 600V 7A α MOS TM Power Transistor General Description Product Summary The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

AOB7S60

Contextual Info: AOT7S60/AOB7S60/AOTF7S60 600V 7A α MOS TM Power Transistor General Description Product Summary The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

G3N60B3D

Abstract: mosfet 4414 HGT1S3N60B3DS HGT1S3N60B3DS9A HGTP3N60B3D RHRD460 TB334
Contextual Info: HGTP3N60B3D, HGT1S3N60B3DS Data Sheet January 2000 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the

7S60

Abstract: AOTF7S60L
Contextual Info: AOT7S60/AOB7S60/AOTF7S60 600V 7A α MOS TM Power Transistor General Description Product Summary The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

G3N60B3

Abstract: Transistor No C110 transistor C110 tr c110 HGT1S3N60B3S HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3 LD26
Contextual Info: HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 interrii J a n u a ry . m D ata S h eet 7A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.

2SK2562-01R

Abstract: 2sk2562
Contextual Info: 2SK2562-01R N-channel MOS-FET FAP-II Series 800V > Features - 2,2Ω 7A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: 2SK2765-01 N-channel MOS-FET FAP-IIS Series 800V > Features - 2Ω 7A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators

2sk2562

Abstract: MOSFET 800V 3A 2SK2562-01R
Contextual Info: 2SK2562-01R N-channel MOS-FET FAP-II Series 800V > Features - 2,2Ω 7A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators