MOS FET 120V Search Results

MOS FET 120V Result Highlights (5)

Part	Manufacturer	Description
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK401G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E
TCK420G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK422G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G

MOS FET 120V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 2SK3218-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters	Original	2SK3218-01 O-220AB	PDF
2SK1506 Abstract: SC-65 A2216 2SK1506 equivalent Contextual Info: 2SK1506 FUJI POWER MOS-FET IJ-CHANNEL SILICON POWER MOS-FET F-III SERIES • Featu res Outline Drawings '* High current # Low no-resistance «»Low driving power liHigh forward Transconductance 111Applications «I»Motor controllers ■iGenaral purpose power amplifier	OCR Scan	2SK1506 SC-65 VOS-10V A2-216 2SK1506 SC-65 A2216 2SK1506 equivalent	PDF
MP6101 Abstract: n channel fet array Contextual Info: MP6101 POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE 7T-MOS FET 6 IN 1 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS MOTOR DRIVE APPLICATIONS. •Pack a g e w i t h Heat Sink Isolated Lead. . H i g h D rain P o wer Dissipation. : P T =120W	OCR Scan	MP6101 300yA Ta-25 Drain940 100/i MP6101 n channel fet array	PDF
Contextual Info: 2SK3218-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters	Original	2SK3218-01 O-220AB	PDF
Diode IDF Abstract: L420 2SK3218-01 Contextual Info: 2SK3218-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters	Original	2SK3218-01 O-220AB Diode IDF L420 2SK3218-01	PDF
Contextual Info: 2SK3219-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters	Original	2SK3219-01MR O-220F15	PDF
Contextual Info: 2SK3219-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters	Original	2SK3219-01MR O-220F15	PDF
2SK3218-01 Abstract: 2SK3219-01MR Contextual Info: 2SK3219-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters	Original	2SK3219-01MR O-220F15 2SK3218-01 2SK3219-01MR	PDF
2SK3219-01MR Abstract: L420 Contextual Info: 2SK3219-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters	Original	2SK3219-01MR O-220F15 2SK3219-01MR L420	PDF
C 5388 Abstract: TFK U 216 B 2SK1506 TFK 03 Diode SC-65 diode s .* tfk TFK S Contextual Info: 2SK1506 FUJI POWER MOS-FET U-CHANNEL SILICON POWER MOS-FET F-III SERIES • Features Outline Drawings "»High current <i*Low no-resistance «»Low driving power #High forward Transconductance III Applications •>Motor controllers ■«»Genaral purpose power amplifier	OCR Scan	2SK1506 SC-65 C 5388 TFK U 216 B 2SK1506 TFK 03 Diode SC-65 diode s .* tfk TFK S	PDF
APC UPS es 500 CIRCUIT DIAGRAM Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212 Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.	OCR Scan	ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212	PDF
Contextual Info: TOSHIBA MP4703 TOSHIBA PO W ER MOS FET MODULE SILICON N CHANNEL MOS TYPE L2-tt-MOS]V 4 IN 1 MP4703 INDUSTRIAL APPLICATIONS Unit in mm HIGH PO W ER, HIGH SPEED SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. 31.5 ±0.2	OCR Scan	MP4703 0-20H	PDF
Contextual Info: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	2SK3036	PDF
2SK3037 Contextual Info: Power F-MOS FETs 2SK3037 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	2SK3037 2SK3037	PDF

2SK3037 Contextual Info: Power F-MOS FETs 2SK3037 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	2SK3037 2SK3037	PDF
Contextual Info: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	2SK3036	PDF
5A diode Abstract: 2SK3037 Contextual Info: Power F-MOS FETs 2SK3037 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	2SK3037 5A diode 2SK3037	PDF
Contextual Info: Power F-MOS FETs 2SK3037 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	2SK3037	PDF
2SK3036 Contextual Info: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	2SK3036 2SK3036	PDF
Contextual Info: Power F-MOS FETs 2SK3037 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	2SK3037	PDF
2SK3036 Contextual Info: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	2SK3036 2SK3036	PDF
2SK3035 Contextual Info: Power F-MOS FETs 2SK3035 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	2SK3035 2SK3035	PDF
2SK3035 Abstract: 2A DIODE Contextual Info: Power F-MOS FETs 2SK3035 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	2SK3035 2SK3035 2A DIODE	PDF
Contextual Info: Power F-MOS FETs 2SK3035 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage unit: mm	Original	2SK3035	PDF

MOS FET 120V Search Results

MOS FET 120V Result Highlights (5)

MOS FET 120V Datasheets Context Search

2SK1506

MP6101

Diode IDF

2SK3218-01

2SK3219-01MR

C 5388

APC UPS es 500 CIRCUIT DIAGRAM

2SK3037

2SK3037

5A diode

2SK3036

2SK3036

2SK3035

2SK3035