MOS FET 400V Search Results

MG100g2ys1

Abstract: mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1
Contextual Info: SUMMARY OF POWER MOS FET BY APPLICATIONS Applications of the Toshiba power MOS FETs are gouped to their rated voltages and currents as shown below. POWER MOS FET FAMILIES Q tt-MOS Series Standard ^-M OS family gained outstanding polurarity in the market Q tt-MOS II Series

12v car battery charger wiring diagram

Abstract: MIP9E MIP55 MIP115 MIP2 MIP814 MIP16 HSOP024-P-0450
Contextual Info: MIP115 Intelligent Power Devices IPDs MIP115 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) Single chip IC of protection circuit

12v car battery charger wiring diagram

Abstract: MIP108 MIP55 MIP16
Contextual Info: MIP108 Intelligent Power Devices IPDs MIP108 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) Single chip IC of protection circuit

12v car battery charger wiring diagram

Abstract: MIP2 MIP106 EL Lamp 10W MIP9E MIP16 MIP02
Contextual Info: MIP106 Intelligent Power Devices IPDs MIP106 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) PWM control of high speed operation

Contextual Info: MIP106 Intelligent Power Devices IPDs MIP106 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) 24 Single chip IC of protection function circuit

MIP9E01

Abstract: mip10 Matsua & SAW & IF matsua saw MIP108 4.5V TO 100V INPUT REGULATOR
Contextual Info: MIP108 Intelligent Power Devices IPDs MIP108 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) 24 1.27 Single chip IC of protection circuit

MIP9E01

Abstract: 4.5V TO 100V INPUT REGULATOR
Contextual Info: MIP115 Intelligent Power Devices IPDs MIP115 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) 24 1.27 Single chip IC of protection circuit

ac ma hen vd

Abstract: 4.5v to 100v input regulator
Contextual Info: Panasonic Intelligent Pow er Devices IPDs MIP115 Silicon MOS IC I Features Single chip IC with power MOS FET and CMOS control circuit Power MOS FET with high breakdown voltage and low input capaci­ tance PWM control of high speed operation Single chip IC of protection circuit

MIP106

Abstract: 8 pin 12v charger ic 4.5v to 100v input regulator
Contextual Info: Panasonic Intelligent Pow er Devices IPDs MIP106 Silicon MOS IC I Features Single chip IC with power MOS FET and CMOS control circuit Power MOS FET with high breakdown voltage and low input capaci­ tance PWM control of high speed operation Single chip IC of protection function circuit

MIP108

Abstract: 4.5V TO 100V INPUT REGULATOR
Contextual Info: Panasonic Intelligent Pow er Devices IPDs MIP108 Silicon MOS IC I Features Single chip IC with power MOS FET and CMOS control circuit Power MOS FET with high breakdown voltage and low input capaci­ tance PWM control of high speed operation Single chip IC of protection circuit

Matsua de

Abstract: MIP9E01 4.5V TO 100V INPUT REGULATOR
Contextual Info: MIP106 Intelligent Power Devices IPDs MIP106 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) 24 ● Single chip IC of protection function circuit

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

Contextual Info: 2SK3340-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features 11.6±0.2 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

2SK3340-01

Contextual Info: 2SK3340-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features 11.6±0.2 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

Contextual Info: 2SK3340-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features 11.6±0.2 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

2SK3338-01

Abstract: L356
Contextual Info: 2SK3338-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

L356

Contextual Info: 2SK3338-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

Contextual Info: 2SK3339-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

Contextual Info: 2SK3339-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

2SK3339-01

Abstract: 230mH
Contextual Info: 2SK3339-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

Contextual Info: Solid State Relay OCMOS FET PS7241-2A 8-PIN SOP, 400V BREAK DOWN VOLTAGE 2-ch Optical Coupled MOS FET DESCRIPTION The PS7241-2A is a solid state relay containing GaAs LEDs on the light emitting side input side and normally open (N.O.) contact MOS FETs on the output side.

PS7141-1A-A

Abstract: PS7141-1A PS7141L-1A PS7141L-1A-E3 PS7141L-1A-E4
Contextual Info: Solid State Relay OCMOS FET PS7141-1A,PS7141L-1A 6-PIN DIP, 400V BREAK DOWN VOLTAGE 1-ch Optical Coupled MOS FET DESCRIPTION The PS7141-1A and PS7141L-1A are solid state relays containing GaAs LEDs on the light emitting side input side and MOS FETs on the output side.

ps7141el-1a-e3-a

Abstract: 1A marking
Contextual Info: Solid State Relay OCMOS FET PS7141E-1A,PS7141EL-1A 6-PIN DIP, 400V BREAK DOWN VOLTAGE 1-ch Optical Coupled MOS FET DESCRIPTION The PS7141E-1A and PS7141EL-1A are solid state relays containing GaAs LEDs on the light emitting side input side and MOS FETs on the output side.

Contextual Info: Panasonic In tellig e nt Power D e v i c e s IP Ds MIP115 Silicon MOS IC • Features • Single chip IC with power MOS FET and CMOS control circuit • Power MOS FET with high breakdown voltage and low input capaci­ tance • PWM control of high speed operation