MOS FET TR Search Results

pa1556ah

Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
Contextual Info: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET

Contextual Info: Preliminary Datasheet R2J20658BNP R07DS0550EJ0101 Previous No.: R07DS0542EJ0100 Rev.1.01 Sep 30, 2011 Integrated Driver - MOS FET (DrMOS) Description The R2J20658BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver

Contextual Info: Preliminary Datasheet R2J20657BNP R07DS0549EJ0101 Previous No.: R07DS0541EJ0100 Rev.1.01 Sep 30, 2011 Integrated Driver - MOS FET (DrMOS) Description The R2J20657BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver

Contextual Info: Preliminary Datasheet R2J20655BNP R07DS0548EJ0101 Previous No.: R07DS0540EJ0100 Rev.1.01 Sep 30, 2011 Integrated Driver - MOS FET (DrMOS) Description The R2J20655BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver

Contextual Info: Preliminary R2J20605ANP Integrated Driver – MOS FET DrMOS REJ03G1821-0300 Rev.3.00 Feb 26, 2010 Description The R2J20605ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

Contextual Info: Preliminary Datasheet R2J20657CNP R07DS0584EJ0100 Rev.1.00 Jul 20, 2012 Integrated Driver - MOS FET DrMOS Description The R2J20657CNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

Contextual Info: R2J20601NP Driver – MOS FET Integrated SiP DrMOS REJ03G0237-0700 Rev.7.00 Jun 30, 2008 Description The R2J20601NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

QFN56 Datasheet

Abstract: QFN56 R2J20602NP QFN56 footprint Nippon capacitors
Contextual Info: R2J20602NP Integrated Driver – MOS FET DrMOS REJ03G1480-0200 Preliminary Rev.2.00 Nov 30, 2007 Description The R2J20602NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

Contextual Info: Preliminary Datasheet R2J20609NP R07DS0666EJ0100 Rev.1.00 Jul 20, 2012 Integrated Driver - MOS FET DrMOS Description The R2J20609NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

Contextual Info: Preliminary R2J20652ANP Integrated Driver – MOS FET DrMOS REJ03G1867-0300 Rev.3.00 Feb 26, 2010 Description The R2J20652ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

Contextual Info: Preliminary Datasheet R2J20608NP R07DS0665EJ0100 Rev.1.00 Jul 20, 2012 Integrated Driver - MOS FET DrMOS Description The R2J20608NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

Contextual Info: Preliminary Datasheet R2J20656ANP R07DS0201EJ0100 Rev.1.00 Jan 25, 2011 Integrated Driver - MOS FET DrMOS Description The R2J20656ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

Contextual Info: Preliminary R2J20653ANP Integrated Driver – MOS FET DrMOS REJ03G1849-0200 Rev.2.00 Dec 21, 2009 Description The R2J20653ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

Contextual Info: Preliminary Datasheet R2J20657BNP R07DS0541EJ0100 Rev.1.00 Sep 01, 2011 Integrated Driver - MOS FET DrMOS Description The R2J20657BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

Contextual Info: Preliminary R2J20653ANP Integrated Driver – MOS FET DrMOS REJ03G1849-0200 Rev.2.00 Dec 21, 2009 Description The R2J20653ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

Contextual Info: Preliminary Datasheet R2J20654NP R07DS0246EJ0100 Rev.1.00 Jan 25, 2011 Integrated Driver - MOS FET DrMOS Description The R2J20654NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

Contextual Info: Preliminary Datasheet R2J20655NP R07DS0200EJ0100 Rev.1.00 Jan 25, 2011 Integrated Driver - MOS FET DrMOS Description The R2J20655NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

Contextual Info: Preliminary Datasheet R2J20657NP R07DS0247EJ0100 Rev.1.00 Jan 25, 2011 Integrated Driver - MOS FET DrMOS Description The R2J20657NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

Contextual Info: Preliminary Datasheet R2J20608NP R07DS0665EJ0100 Rev.1.00 Jul 20, 2012 Integrated Driver - MOS FET DrMOS Description The R2J20608NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

Contextual Info: Preliminary Datasheet R2J20657CNP R07DS0584EJ0100 Rev.1.00 Jul 20, 2012 Integrated Driver - MOS FET DrMOS Description The R2J20657CNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

C10535E

Abstract: MEI-1202 PA505T marking FA fet transistor
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA505T N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS MOS FET circuits. It achieves high-density mounting and saves mounting costs. PACKAGE DIMENSIONS (in millimeters) 0.32 +0.1 –0.05 • Two source common MOS FET circuits in package the

marking ia

Abstract: uPA602T C10535E MEI-1202 PA602T PA603T
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA602T N-CHANNEL MOS FET 6-PIN 2 CIRCUITS The µPA602T is a mini-mold device provided with two PACKAGE DIMENSIONS (in millimeters) MOS FET circuits. It achieves high-density mounting and • Two MOS FET circuits in package the same size as

2SJ243

Abstract: C10535E MEI-1202
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ243 P-CHANNEL MOS FET FOR SWITCHING The 2SJ243 is a P-channel vertical type MOS FET that is driven PACKAGE DIMENSIONS in mm at 2.5 V. 0.3 ± 0.05 Because this MOS FET can be driven on a low voltage and 0.1 +0.1 –0.05

2SK1824

Abstract: C10535E MEI-1202
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1824 N-CHANNEL MOS FET FOR SWITCHING The 2SK1824 is a N-channel vertical type MOS FET that is PACKAGE DIMENSIONS in mm driven at 2.5 V. 0.1 +0.1 –0.05 0.3 ± 0.05 Because this MOS FET can be driven on a low voltage and