MOS INVERTER Search Results

pa1556ah

Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
Contextual Info: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET

101490

Abstract: P22n HM50464P-12 50464 ram
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY

rca thyristor manual

Abstract: HN623258 101490
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j

QS6M4

Abstract: TSMT6 Pch MOS FET m04 fet
Contextual Info: QS6M4 Transistors 2.5V Drive Nch+Pch MOS FET QS6M4 zExternal dimensions Unit : mm zStructure Silicon P-channel MOS FET Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOS FET with a Nch MOS FET in a single TSMT6 package.

Contextual Info: TPC8407 MOSFETs Silicon P-/N-Channel MOS U-MOS/U-MOS-H TPC8407 1. Applications • Motor Drivers • CCFL Inverters • Mobile Equipments 2. Features (1) Small footprint due to a small and thin package (2) High speed switching (3) Low drain-source on-resistance

Contextual Info: TPC8407 MOSFETs Silicon P-/N-Channel MOS U-MOS/U-MOS-H TPC8407 1. Applications • Motor Drivers • CCFL Inverters • Mobile Equipments 2. Features (1) Small footprint due to a small and thin package (2) High speed switching (3) Low drain-source on-resistance

TPC8407

Abstract: B 817 c
Contextual Info: TPC8407 MOSFETs Silicon P-/N-Channel MOS U-MOS/U-MOS-H TPC8407 1. Applications • Motor Drivers • CCFL Inverters • Mobile Equipments 2. Features (1) Small footprint due to a small and thin package (2) High speed switching (3) Low drain-source on-resistance

2N6660

Abstract: 2N6659 2N6661 TP 1322 2N6661 transistor
Contextual Info: 2N 6659 2N 6660 2N6661 N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-39 envelope and designed fo r application as low-power, high-frequency inverters and line drivers. Features: • Direct interface to C-MOS, T T L , etc.

SN7401

Abstract: DS8812N DS8810J VU14A m7403 SN74* inverter DS7810J SN5401 7403 N14A
Contextual Info: DS7810/DS8810, DS7811/DS8811, DS7812/DS8812 ^ . Level Translators/Buffers National Semiconductor DS7810/DS8810 Quad 2-Input TTL-MOS Interface Gate DS7811/DS8S11 Quad 2-Input TTL-MOS Interface Gate DS7812/DS8812 Hex TTL-MOS Inverter General Description In a d d itio n th e devices m ay be used in applicatio n s

SN7401

Abstract: SN5401 W14A DS7810J m7403 SN7403 DS8812N 7403 MM506 N14A
Contextual Info: DS7810/DS8810, DS7811/DS8811, DS7812/DS8812 ^ . Level Translators/Buffers National Semiconductor DS7810/DS8810 Quad 2-Input TTL-MOS Interface Gate DS7811/DS8S11 Quad 2-Input TTL-MOS Interface Gate DS7812/DS8812 Hex TTL-MOS Inverter General Description In a d d itio n th e devices m ay be used in applicatio n s

rjp6065

Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance

Contextual Info: 2N6659 2N6660 _ / V _ 2N6661 N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical O-MOS transistor in a TO-39 envelope and designed for application as low-power, high-frequency inverters and line drivers.

MC14050B

Abstract: MC14049B MC14XXXBCL MC14XXXBCP MC14XXXBD mc14050B CMOS Buffer MOTOROLA MC14049B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14049B MC14050B Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS

QS6M4

Contextual Info: QS6M4 Transistors Small switching QS6M4 zExternal dimensions Unit : mm TSMT6 2.8 1.6 0.85 Each lead has same dimensions zApplications Load switch, inverter Abbreviated symbol : M04 zEquivalent circuit zStructure Silicon P-channel MOS FET Silicon N-channel MOS FET

mitsubishi PM20CSJ060

Abstract: mitsubishi PM30CSJ060 Mitsubishi Electric IGBT MODULES Mitsubishi IPM module PS11015 mitsubishi power Modules PM30ctj060-3 m57962l M57959L/M57962L pm25rsb120
Contextual Info: Power Modules Power Modules MOS Power Modules BIPOLAR Preceding Page MITSUBISHI ELECTRIC CORPORATION Power Modules MOS Guidance IGBT Modules CIB Converter Inverter Brake Modules Intelligent Power Modules (IPMs) Hybrid ICs Applications Preceding Page © MITSUBISHI ELECTRIC CORPORATION

rg10 diode

Abstract: DIODE RG10 RG10 QS6M4
Contextual Info: QS6M4 Transistors Small switching QS6M4 zExternal dimensions Unit : mm TSMT6 2.8 1.6 0.85 Each lead has same dimensions zApplications Load switch, inverter Abbreviated symbol : M04 zEquivalent circuit zStructure Silicon P-channel MOS FET Silicon N-channel MOS FET

MC14049

Abstract: MC14049BCP MC14050BCP 948F MC14049B MC14049BD MC14049BDR2 MC14049BF MC14050B MC14050BD
Contextual Info: MC14049B, MC14050B Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power

MC14049BCP

Abstract: MC14050B MC14050BCP 948F MC14049B MC14049BD MC14049BDR2 MC140XXBCP
Contextual Info: MC14049B, MC14050B Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power

mc14050b

Abstract: MC14050BCP
Contextual Info: MC14049B, MC14050B Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power

Contextual Info: MC14049B, MC14050B Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power

MC14050BDG

Contextual Info: MC14049B, MC14050B Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power

MC14049B

Abstract: 948F MC14049BCP MC14049BD MC14049BDR2 MC14049BF MC14050B MC14050BCP MC14050BD
Contextual Info: MC14049B, MC14050B Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power

Contextual Info: MC14049B, MC14050B Hex Buffer The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power

fairchild mos

Abstract: ScansUX979
Contextual Info: JANUARY 1968 MOS MONOLITHIC 4 CHANNEL SWITCH MOS INTEGRATED CIRCUIT 4 CHANNEL SWITCH GENERAL DESCRIPTION — The 3700 is a four-channel multiplex switch with all channel blanking. It is a monolithic integrated circuit utilizing Planar“ II, P-Channel enhancement mode MOS technology.