MOS N FET E Search Results

mtm76325

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . MTM76325 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Overview  Package MTM76325 is the composite MOS FET (N-channel and P-channel MOS

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package  Overview MTM86727 is the composite MOS FET (N-channel MOS FET and schottky

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package  Overview MTM86727 is the composite MOS FET (N-channel MOS FET and schottky

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM76720 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package  Overview MTM76720 is the composite MOS FET (N-channel MOS FET and schottky

2SK1824

Abstract: C10535E MEI-1202
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1824 N-CHANNEL MOS FET FOR SWITCHING The 2SK1824 is a N-channel vertical type MOS FET that is PACKAGE DIMENSIONS in mm driven at 2.5 V. 0.1 +0.1 –0.05 0.3 ± 0.05 Because this MOS FET can be driven on a low voltage and

2SK1580

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1580 N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SK1580 is an N -channel vertical type MOS FET which can be PACKAGE DRAWING Unit : mm driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require con-

FET2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FG654301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits • Overview  Package FG654301 is N-P channel dual type small signal MOS FET employed small

FET2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FG654301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits • Overview  Package FG654301 is N-P channel dual type small signal MOS FET employed small

2SK1398

Contextual Info: MOS FIELD EFFECT TRANSISTOR 2SK1398 N-CHANNEL MOS FET FOR HIGH SPEED SW ITCHING PACKAGE DIMENSIONS Unit : mm The 2SK1398 is an N-channel vertical type MOS FET which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require con­

G1563

Abstract: D1563 2SK1658 C10535E VP15-00-3 NEC MARKING surface TC236
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1658 N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SK1658 is an N -channel vertical type MOS FET which can be PACKAGE DRAWING Unit : mm driven by 2.5 V power supply. 2.1 ±0.1 1.25 ±0.1 As the MOS FET is low Gate Leakage Current, it is suitable for appliances

2SK3111

Abstract: 2SK3111-S 2SK3111-ZJ MP-25
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3111 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3111 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,

2SK3296

Abstract: 2SK3296-S 2SK3296-ZJ MP-25 nec 2sk3296
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3296 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3296 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics,

2SK3295

Abstract: 2SK3295-S 2SK3295-ZJ MP-25
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3295 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3295 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics,

C10535E

Abstract: MEI-1202 PA505T marking FA fet transistor
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA505T N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS MOS FET circuits. It achieves high-density mounting and saves mounting costs. PACKAGE DIMENSIONS (in millimeters) 0.32 +0.1 –0.05 • Two source common MOS FET circuits in package the

nec 2702

Abstract: nec 2501 2SK3108
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3108 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3108 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3109 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,

2SK3109

Abstract: 2SK3109-S 2SK3109-ZJ MP-25 1302 diode
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3109 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,

2SK3294

Abstract: 2SK3294-S 2SK3294-ZJ MP-25
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3294 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3294 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics,

2SK3454

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3454 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3454 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, PART NUMBER

2SK3573

Abstract: 2SK3573-S 2SK3573-Z 2SK3573-ZK MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3573 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3573 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics,

2SK3572-Z

Abstract: ISS 99 diode 2SK3572 D1625 2SK3572-S 2SK3572-ZK MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3572 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3572 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics,

2SK3640

Abstract: 2SK3640-ZK
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3640 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3640 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and PART NUMBER PACKAGE

2SK3638

Abstract: 2SK3638-ZK
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3638 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3638 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and PART NUMBER PACKAGE

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3454 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3454 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, PART NUMBER