MOS POWER 823 Search Results

Contextual Info: APT6017B2LL APT6017LLL 600V 35A 0.170W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

Contextual Info: APT6017B2FLL APT6017LFLL 600V 35A 0.170W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

XP151A03A7MR

Contextual Info: Power MOS FET ◆N-Channel Power MOS FET •Applications ◆DMOS Structure ●Notebook PCs ◆Low On-State Resistance: 0.17Ω max ●Cellular and portable phones ●On-board power supplies ◆Ultra High-Speed Switching ●Li-ion battery systems ◆SOT-23 Package

Contextual Info: APT6017JLL 600V POWER MOS 7TM Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel

Contextual Info: APT6017JLL 600V 31A POWER MOS 7TM Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

Contextual Info: APT6017JFLL 600V 31A 0.170W POWER MOS 7TM FREDFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package

Contextual Info: PF0011 b lE ]> p o ia n a T33 • h it i4 HITACHI/ OPTOELECTRONICS HIGH FREQUENCY POWER MOS FET MODULE UHF Band 890-915 MHz ■ FEATURES • Include Input and Output Matching Circuit • Easy to Control Output Power • Superior to Stability at Load Mismatching

TEA2262

Contextual Info: r = 7 SGS-THOMSON liìiflDÈ[S [l[Li gTFK©liì!lD(gi TEA2262 SWITCH MODE POWER SUPPLY CONTROLLER • POSITIVE AND NEGATIVE OUTPUT CUR­ RENT UP TO 1A ■ LOW START-UP CURRENT ■ DIRECT DRIVE OF THE MOS POWER TRANSISTOR ■ TWO LEVELS TRANSISTOR CURRENT LIMI­

electrical circuit diagram reverse forward move d

Abstract: H24 SMD DIODE
Contextual Info: Low Power Loss ORing Diode Module BID Series This is a low power loss ORing diode device that eliminates the need for a Schottky diode. With the voltage detection between terminals of its built-in MOS-FET, it is turned ON for forward voltage and OFF for reverse voltage like a diode.

H24 SMD DIODE

Abstract: electrical circuit diagram reverse forward move d 12v bulb 220 supply diagram
Contextual Info: Low Power Loss ORing Diode Module BID Series This is a low power loss ORing diode device that eliminates the need for a Schottky diode. With the voltage detection between terminals of its built-in MOS-FET, it is turned ON for forward voltage and OFF for reverse voltage like a diode.

Contextual Info: HAT2016R Silicon N Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-438 H 9th. Edition Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SO P-8 V3 7 8 5 6 1, 3 Source 2 ,4 Gate

vk200* FERROXCUBE

Abstract: MRF137 3950K MOTOROLA TRANSISTOR 974
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line 30 W 2 .0 -4 0 0 MHz N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR N-CHANNEL MOS BROADBAND RF POWER . . . designed fo r w ideband large-signal o utp ut and d river stages in the 2.0 to 400 MHz range

N 821 Diode

Abstract: transistor IRF 450 821 transistor ON 823 D 823 transistor transistor D 822 irf transistor 822FI SC-0241 tr 821
Contextual Info: rz 7 A 7#. SCS-THOMSON IRF 820/FI-821/FI mnmglliigmiBiMnigi_ IRF 822/FI-823/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS RdS OI1 IRF820 IRF820FI 500 V 500 V 3.0 ß 3.0 ß IRF821 IRF821FI 450 V 450 V 3.0 ß 3.0 n 2.5 A 2.0 A IRF822

TEA2262

Abstract: SMPS Transformer Symbol circuit diagram of high power smps SMPS Transformer 12V mos power 823 TEA5170 smps circuit diagrams MASTER-SLAVE SMPS FOR TV hf amplifier for transformer
Contextual Info: ^7M Æ 7 S G S -T H O M S O N ß IL IO T M K i TEA 2262 SWITCH MODE POWER SUPPLY CONTROLLER POSITIVE AND NEGATIVE OUTPUT CUR­ RENT UP TO 1A LOW START-UP CURRENT DIRECT DRIVE OF THE MOS POWER TRANSISTOR TWO LEVELS TRANSISTOR CURRENT LIMI­ TATION DOUBLE PULSE SUPPRESSION

Contextual Info: Preliminary Datasheet 1.0MHz, 3.5A, Synchronous Step Down DC-DC Converter General Description Features The AP3435 is a high efficiency step-down DC-DC voltage converter. The chip operation is optimized by peak-current mode architecture with built-in synchronous power MOS switchers. The oscillator

mos 8580

Abstract: 87-3.3
Contextual Info: Voltage Controlled Oscillator Typical Performance Data MOS-868-119+ V TUNE FREQUENCY POWER OUTPUT TUNE SENS MHz/V (MHz) (dBm) 0.00 0.25 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 10.50 11.00 11.50 12.00

svi 2003

Abstract: 915MH svi 2003 a PF0011 S85M 915m1 885Mhz 915p Hitachi Scans-001
Contextual Info: blE D PF0011 M^baOS 00135cia T33 • H I T M HITACHI/ OPTOELECTRONICS HIGH FREQUENCY POW ER MOS F E T MODULE UHF Band 890-915 MHz ■ FEATURES # Include Input and Output Matching Circuit # Easy to Control Output Power # Superior to Stability at Load Mismatching

Contextual Info: Voltage Controlled Oscillator Typical Performance Data MOS-828-219+ V TUNE FREQUENCY POWER OUTPUT TUNE SENS MHz/V (MHz) (dBm) 0.00 0.25 0.50 0.80 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 3.25 3.50 3.75 4.00 4.25 4.50 4.80 5.00 5.25 5.50 5.75 6.00 6.25

ELM13401CA

Abstract: ELM13401EA ELM13400CA SOT-26 ci FET MARKING MO sot-23 ELM13401AA E1101 SOT-23 00A ELM13401 marking za mos
Contextual Info: ELM13400XÄ N-Channel Enhancement Mode Power MOS FET • GENERAL DESCRIPTION ELM13400xA Series uses advanced trench technology to provide excellent Riwom, low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM

Contextual Info: Æ T S G S -T tfO M S O N RiôD g (Q [l[L[lgïï[S(o)RgD(gi TEA2262 SWITCH MODE POWER SUPPLY CONTROLLER • POSITIVE AND NEGATIVE OUTPUT CUR­ RENT UP TO 1A ■ LOW START-UP CURRENT ■ DIRECT DRIVE OF THE MOS POWER TRANSISTOR ■ TWO LEVELS TRANSISTOR CURRENT LIMI­

IC-3190

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ ///PD42S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The jiPD42S16800, 4216800, 42S17800, 4217800 are 2,097.152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

MN3802

Abstract: mn3811k MN3802A MN3801 MN3830S mn3811 MN3725 mn3810 MN3823S 318MHZ
Contextual Info: MOS LSIs • CCD Delay Line Series 1 Type No. Category N M S Supply voltage (12V) Quasi-single power supply 5V, (9V) c s Low EMI Low clock noise Supply voltage 5V,9V Clock Multiplier Package No. Auto-bias 6.0MHz 400mVp-p built-in 5V 200mW 6V O.OlmW 1H -

20N06

Contextual Info: SGS-THOMSON STP20N06 STP20N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP20N 06 STP20N 06FI V dss R DS on Id 60 V 60 V 0 .0 9 £2 0 .0 9 £2 20 A 13 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C