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Abstract: No abstract text available
Text: RF & MICROWAVE CAPACITORS Single layer ceramic & MOS capacitors - Ceramic SINGLE LAYER CERAMIC & MOS CAPACITORS PRE LIM INA RY CERAMIC CAPACITORS Applications • • • • Microwave integrated components GaAs Integrated circuits RF/Microwave components
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IC 7555 datasheet
Abstract: 7555 ic
Text: MIS/MOS Single Layer Capacitors Metal Insulator Semiconductor/Metal Oxide Semiconductor For applications in RF, Microwave and GHz ranges, AVX offers MIS/MOS Capacitors. These are Single Layer Capacitors SLCs that use Silicon Nitride or Silicon Dioxide to
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S-MOS00M1006-N
IC 7555 datasheet
7555 ic
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Untitled
Abstract: No abstract text available
Text: MIS/MOS Single Layer Capacitors Metal Insulator Semiconductor/Metal Oxide Semiconductor For applications in RF, Microwave and GHz ranges, AVX offers MIS/MOS Capacitors. These are Single Layer Capacitors SLCs that use Silicon Nitride or Silicon Dioxide to
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S-MOS00M1006-N
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MIL-PRF-49464
Abstract: No abstract text available
Text: www.avx.com AVX Single Layer Ceramic & MOS Capacitors for Applications from DC to Light Version 10.10 Microwave Single Layer Capacitors Table of Contents Single Layer Ceramic Capacitors SLC’s General Information Dielectrics, Environmental Tests, How to Order (Catalog Number Description) . . . . . . . . . . . . . . . . . . . . . . . . . . .2-3
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S-SLC0M1010-C
MIL-PRF-49464
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metal detector vlf 15khz
Abstract: sma connector 0.508mm Smith esr meter kit Shielded Microstrip 6647a dielectric resonator KYOCERA GH0158101MA6N uhf microwave fet MIL-C-55681 2082-2700-00
Text: www.avx.com AVX Single Layer Ceramic & MOS Capacitors for Applications from DC to Light Version 6.1 Microwave Single Layer Capacitors Table of Contents Single Layer Ceramic Capacitors SLC’s General Information Dielectrics, Environmental Tests, How to Order (Catalog Number Description) . . . . . . . . . . . . . . . . . . . . . . . . . . .2-3
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S-SLC5M706-C
metal detector vlf 15khz
sma connector 0.508mm
Smith esr meter kit
Shielded Microstrip
6647a
dielectric resonator KYOCERA
GH0158101MA6N
uhf microwave fet
MIL-C-55681
2082-2700-00
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metal detector vlf 15khz
Abstract: 6647a hewlett packard semiconductor cross reference GH0158101MA6N MIL-C-55681 uhf microwave fet SLC NP0 capacitor GZ04 ultrasonic full bridge GH105Z
Text: www.avx.com AVX Single Layer Ceramic & MOS Capacitors for Applications from DC to Light Version 6.1 Microwave Single Layer Capacitors Table of Contents Single Layer Ceramic Capacitors SLC’s General Information Dielectrics, Environmental Tests, How to Order (Catalog Number Description) . . . . . . . . . . . . . . . . . . . . . . . . . . .2-3
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S-SLC5M706-C
metal detector vlf 15khz
6647a
hewlett packard semiconductor cross reference
GH0158101MA6N
MIL-C-55681
uhf microwave fet
SLC NP0 capacitor
GZ04
ultrasonic full bridge
GH105Z
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MOS SIngle Layer Capacitors
Abstract: Capacitors Single Layer Capacitors Thin-Film Technologies Thin Film Technologies Electrical Specifications Single Layer Capacitor atceramics
Text: ATC // AVX MOS Single Layer Capacitors Metal Oxide Semiconductor ATC//AVX Thin Film Technologies offers semi-custom thin film Metal Oxide Semiconductor MOS Single Layer Capacitors suitable for RF/ microwave and millimeter-wave applications. The silicon oxide dielectric is fabricated with high temperature
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Abstract: No abstract text available
Text: ATC // AVX MOS Single Layer Capacitors Metal Oxide Semiconductor ATC//AVX Thin Film Technologies offers semi-custom thin film Metal Oxide Semiconductor MOS Single Layer Capacitors suitable for RF/ microwave and millimeter-wave applications. The silicon oxide dielectric is fabricated with high temperature
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MIL-STD-883 Method 2019
Abstract: No abstract text available
Text: MOS Cap Metal Oxide Semiconductor Single Layer Capacitor BENEFITS • • • • Very Stable Capacitance GHz Operation Customizable Small Size GENERAL INFORMATION For applications in RF, microwave, and GHz ranges, AVX now offers MOS Capacitors. MOS Capacitors are Single
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50MHz-25GHz
MIL-STD-883 Method 2019
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Mil-Std-883 Wire Bond shear Method 2011
Abstract: MIL-STD-883 method 2019
Text: MOS Cap Metal Oxide Semiconductor Single Layer Capacitor BENEFITS • • • • Very Stable Capacitance GHz Operation Customizable Small Size GENERAL INFORMATION For applications in RF, microwave, and GHz ranges, AVX now offers MOS Capacitors. MOS Capacitors are Single
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MIL-STD-883,
MIL-STD-202,
50MHz-25GHz
Mil-Std-883 Wire Bond shear Method 2011
MIL-STD-883 method 2019
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CMOS
Abstract: MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model
Text: 0.18 µm CMOS Process XC018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular RF enabled CMOS Logic and Analog Technology 0.18-micron drawn gate length N-well process, modules are also available for metal-insulatormetal capacitors, high resistive poly, dual gate
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XC018
18-micron
XC018
CMOS
MICRON RESISTOR Mos
MOS RM3
power BJT PNP spice model
spice gate drive module
mos rm3 data
ESD "p-well" n-well"
CMOS spice model
ne3 MOS3ST
varactor diode SPICE model
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Untitled
Abstract: No abstract text available
Text: Microwave Single Layer Capacitors Table of Contents Single Layer Ceramic Capacitors SLC’s General Information Dielectrics, Environmental Tests, How to Order (Catalog Number Description) . . . . . . . . . . . . . . . . . . . . . . . . . . .2-3 GH/GB Series – SLC’s with & without Borders
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varactor flip chip
Abstract: CMOS Stacked RF INtermétal
Text: ▼ The Fujitsu Analog and RF CMOS Technology Description Building on Fujitsu’s expertise in leading-edge CMOS processes and analog design capabilities, the company’s RF CMOS technologies are optimized for wireless networks, cellular communication, WiMAX, digital multi-media
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100GHz.
WFS-FS-21329-11/2008
varactor flip chip
CMOS Stacked RF
INtermétal
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mos rm3 data
Abstract: MOS RM3 BSIM3V3 XH035 RM4L bsim3 dw-mo MICRON POWER RESISTOR Mos Q100 analog devices transistor tutorials
Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and
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XA035
XA035
35-micron
XH035
mos rm3 data
MOS RM3
BSIM3V3
RM4L
bsim3
dw-mo
MICRON POWER RESISTOR Mos
Q100
analog devices transistor tutorials
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Abstract: No abstract text available
Text: APPLICATION NOTE INTRODUCTION TO SEMICONDUCTOR TECHNOLOGY by the Micro Divisions INTRODUCTION An integrated circuit is a small but sophisticated device implementing several electronic functions. It is made up of two major parts: a tiny and very fragile silicon chip die and a package
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AN900/0299describes
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XH035
Abstract: mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3
Text: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target
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XH035
XH035
35-micron
mos rm3 data
nmos transistor 0.35 um
MOS RM3
"X-Fab" Core cell library
bsim3v3
jfet wn 428
PHVC
polysilicon resistor
bsim3
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chemical reactor
Abstract: No abstract text available
Text: APPLICATION NOTE INTRODUCTION TO SEMICONDUCTOR TECHNOLOGY by the Micro Divisions INTRODUCTION An integrated circuit is a small but sophisticated device implementing several electronic functions. It is made up of two major parts: a tiny and very fragile silicon chip
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AN900
Abstract: ionic liquid SIO-2 smartcard substrate stmicroelectronics traceability
Text: AN900 APPLICATION NOTE INTRODUCTION TO SEMICONDUCTOR TECHNOLOGY by Microcontroller Division Applications INTRODUCTION An integrated circuit is a small but sophisticated device implementing several electronic functions. It is made up of two major parts: a tiny and very fragile silicon chip die and a package
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AN900
AN900/1100
AN900
ionic liquid
SIO-2
smartcard substrate
stmicroelectronics traceability
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chemical reactor
Abstract: AN900 silicon semiconductor technology
Text: AN900 APPLICATION NOTE INTRODUCTION TO SEMICONDUCTOR TECHNOLOGY by Microcontroller Division Applications INTRODUCTION An integrated circuit is a small but sophisticated device implementing several electronic functions. It is made up of two major parts: a tiny and very fragile silicon chip die and a package
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AN900
AN900/1100
chemical reactor
AN900
silicon semiconductor technology
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MOS RM3
Abstract: mos rm3 data "X-Fab" Core cell library ESD "p-well" n-well" XH035 0.18 um CMOS Spiral Inductor technology bsim3v3 RM3 transistors Q100 analog devices transistor tutorials
Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and
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XA035
XA035
35-micron
XH035
MOS RM3
mos rm3 data
"X-Fab" Core cell library
ESD "p-well" n-well"
0.18 um CMOS Spiral Inductor technology
bsim3v3
RM3 transistors
Q100
analog devices transistor tutorials
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MOS RM3
Abstract: No abstract text available
Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing
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XO035
XO035
35-micron
MOS RM3
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MOS RM3
Abstract: mos rm3 data XO035 Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well"
Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing
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XO035
XO035
35micron
MOS RM3
mos rm3 data
Silicon Image 1364
cmos transistor 0.35 um
analog devices transistor tutorials
"X-Fab" Core cell library
6E-08
opto mos application
ESD "p-well" n-well"
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XH035 library
Abstract: depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 XH035 analog devices transistor tutorials MOS RM3
Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and
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XA035
XA035
35-micron
XH035
XH035 library
depl
"X-Fab" Core cell library
nmos transistor 0.35 um
cmos transistor 0.35 um
CMOS spice model
Q100
analog devices transistor tutorials
MOS RM3
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Tekelec TA
Abstract: No abstract text available
Text: MOS CAPACITORS Single - p a d MOS c a p a c ito rs . 44 Multi - p a d MOS c a p a c ito rs . 46 TEKELEC MICROWAVE offers MOS ca p a cito rs in single-pad series OS a n d m ultipad (series CJ)
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