MOS TECHNOLOGY INC Search Results
MOS TECHNOLOGY INC Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| DFE2016CKA-2R2M=P2 | Murata Manufacturing Co Ltd | Fixed IND 2.2uH 1400mA NONAUTO |
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| GCM033M8ED104KE07D | Murata Manufacturing Co Ltd | 0201 (0603M) X8M (Murata) 10Vdc 0.1μF±10% |
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| GRT155C80G106ME13D | Murata Manufacturing Co Ltd | 0402 (1005M) X6S (EIA) 4Vdc 10μF±20% |
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| GRT31CC71C226ME13L | Murata Manufacturing Co Ltd | 1206 (3216M) X7S (EIA) 16Vdc 22μF±20% |
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| KC355QD7LG134KH01L | Murata Manufacturing Co Ltd | X7T (EIA) 1250Vdc 0.13μF±10% |
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MOS TECHNOLOGY INC Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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power bjt advantages and disadvantages
Abstract: advantages and disadvantages of cmos BJT Gate Drive circuit bjt advantages and disadvantages amplifier advantages and disadvantages linear cmos logic advantages of a bjt amplifier polysilicon resistor fabrication BJT amplifiers Cmos not gate high frequency
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Contextual Info: Vishay Intertechnology, Inc. RECTIFIERS TMBS IN SMPA Very Low Profile Typical Height of 0.95 mm, Trench MOS Barrier Schottky Technology TMBS® IN SMPD Very Low Profile Typical Height of 1.7 mm, Trench MOS Barrier Schottky Technology TMBS® IN SlimSMA Very Low Profile |
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AEC-Q101 VMN-MS6928-1505 | |
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Contextual Info: APT6015LVFR 600V POWER MOS V 38A 0.150W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT6015LVFR O-264 O-264 | |
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Contextual Info: APT6011LVFR 600V POWER MOS V 49A 0.110W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT6011LVFR O-264 O-264 | |
APT6015JVFRContextual Info: APT6015JVFR 600V POWER MOS V 35A 0.150W FREDFET S S ® Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS |
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APT6015JVFR E145592 OT-227 APT6015JVFR | |
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Contextual Info: APT12045L2VR 1200V 28A 0.450Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT12045L2VR O-264 APT12045L2VR | |
APT10050LVRContextual Info: APT10050LVR 21A 0.500Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT10050LVR O-264 O-264 APT10050LVR | |
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Contextual Info: APT1201R5BVR 1200V 10A 1.500Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT1201R5BVR O-247 O-247 30TO-SOURCE | |
APT10086BVRContextual Info: APT10086BVR 13A 0.860Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT10086BVR O-247 O-247 APT10086BVR | |
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Contextual Info: APT6025SVR 600V 25A 0.250W POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT6025SVR | |
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Contextual Info: APT12045L2VFR 1200V 28A 0.450Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT12045L2VFR O-264 O-264 | |
APT12080LVR
Abstract: 1200v diode
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APT12080LVR O-264 O-264 APT12080LVR 1200v diode | |
APT1001RSVRContextual Info: APT1001RSVR 11A 1.000Ω 1000V POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V |
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APT1001RSVR APT1001RSVR | |
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Contextual Info: APT6030BVFR 600V POWER MOS V 21A 0.300W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT6030BVFR O-247 O-247 | |
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APT10M11LVRContextual Info: APT10M11LVR 0.011Ω 100V 100A POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT10M11LVR O-264 O-264 APT10M1LVR APT10M11LVR | |
APT1001RBVRContextual Info: APT1001RBVR 11A 1.000Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT1001RBVR O-247 O-247 APT1001RBVR | |
APT1001RBVFRContextual Info: APT1001RBVFR 11A 1.000Ω 1000V POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V |
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APT1001RBVFR O-247 O-247 APT1001RBVFR | |
APT20M45SVFRContextual Info: APT20M45SVFR 56A 0.045Ω 200V POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V |
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APT20M45SVFR MIL-STD-750 APT20M45SVFR | |
APT10086BVRContextual Info: APT10086BVR 13A 0.860Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT10086BVR O-247 O-247 APT10086BVR | |
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Contextual Info: APT6011B2VFR 600V POWER MOS V 49A 0.110W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT6011B2VFR MIL-STD-750 | |
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Contextual Info: APT10086SVR 13A 0.860Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT10086SVR | |
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Contextual Info: APT6015JVFR 600V POWER MOS V 35A 0.150W FREDFET S S ® Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS |
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APT6015JVFR E145592 OT-227 | |
APT20M22LVRContextual Info: APT20M22LVR 200V 100A 0.022Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT20M22LVR O-264 O-264 APT20M22LVR | |
APT20M38BVFRContextual Info: APT20M38BVFR 67A 0.038Ω 200V POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V |
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APT20M38BVFR O-247 O-247 APT20M38BVFR | |