MOS TURN-OFF THYRISTOR Search Results

MTO thyristor

Abstract: mos Turn-off Thyristor 100a 1000v thyristor GTO thyristor 100A, 2000V 300A thyristor gate control circuit 100A gate turn-off thyristor 300a 1000v thyristor 150A 2000V GTO thyristor 100a 1000v GTO 150a gto 2000v
Contextual Info: SDM170HK2 500A, 4500V 53mm MTOTM Thyristor Features Package 500A, 4500V Voltage Control Turn-Off Capability Low Power Gate Driver A = 75.2mm, B = 48.3mm, D = 27.2mm Symmetrical Blocking Capability Description MTOTM Thyristor is a new hybrid high power bipolar MOS turn-off thyristor. It is

Contextual Info: CTG35P60F1 35A, 600V -Type MOS Controlled Thyristor MCT Features • 35A,-600V • VTM = -1.3V(Maximum) at I = 35A and +150°C • 800A Surge Current Capability • 800A/|.is di/dt Capability • MOS Insulated Gate Control • 50A Gate Turn-Off Capability at +150°C

M65P100F1

Abstract: RHRG75120 equivalent MCT thyristor 1000v
Contextual Info: MCTV65P100F1, MCTA65P100F1 NS SIG E D S E M I C O N D U C T O R 0F2 EW R N 65P10 O F D CT3 DED MEN 00F2, M M O 1 REC 65P NOT MCT3A P-Type April 1998 See Features 65A, 1000V MOS Controlled Thyristor MCT Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC

"mos controlled thyristor"

Abstract: MOS Controlled Thyristor MCTA65P100F1 1000V MCT M65P100F1 MCTV65P100F1 MCT thyristor MCT thyristor 1000v
Contextual Info: MCTV65P100F1, MCTA65P100F1 S E M I C O N D U C T O R 65A, 1000V P-Type MOS Controlled Thyristor MCT April 1995 Features Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC ANODE ANODE CATHODE GATE RETURN CATHODE (FLANGE) • 2000A Surge Current Capability

MCT thyristor

Abstract: MCTV75P60E1 MOS Controlled Thyristor MCT harris "MOS Controlled Thyristors" mct thyristor datasheet MCTA75P60E1 MCTV75P6
Contextual Info: Semiconductor IGNS WN DRA EW DES H T I TW ON PAR ETE - N L BSO SS O 75A, 600V P-Type MOS Controlled Thyristor MCT CE April 1999 PRO MCTV75P60E1, MCTA75P60E1 Features Package JEDEC STYLE TO-247 5-LEAD • 75A, -600V ANODE • VTM = -1.3V(Maximum) at I = 75A and +150oC

MOS Controlled Thyristor

Abstract: mct 575 "MOS Controlled Thyristors" "mos controlled thyristor" MCT thyristor Thyristors application circuits
Contextual Info: MCTG35P60F1 S E M I C O N D U C T O R April 1998 NS DESIG W E N 2 R P100F ED FO MEND 2, MCT3D65 M O C E P-Type NOT R T3A65P100F C M e e S Features 35A, 600V MOS Controlled Thyristor MCT Package • 35A, -600V JEDEC STYLE TO-247 o • VTM = -1.3V(Maximum) at I = 35A and +150 C

MOS Controlled Thyristor

Abstract: MCT thyristor "MOS Controlled Thyristors" 100DV MCTG35P60F1 MCTG35P6
Contextual Info: MCTG35P60F1 Semiconductor April 1999 WN IGNS ITHDRA W T R W DES A E P N O N EP-Type SOLET ESS OB PROC Features 35A, 600V MOS Controlled Thyristor MCT Package • 35A, -600V JEDEC STYLE TO-247 o • VTM = -1.3V(Maximum) at I = 35A and +150 C A • 800A Surge Current Capability

"MOS Controlled Thyristors"

Abstract: MCT thyristor MOS Controlled Thyristor M65P100F1 MCTV65P100F1 MOS-Controlled Thyristor 1000V MCT MCTA65P100F1 2000A MOS MCTV65P1
Contextual Info: Semiconductor S April 1999 CES PRO NS N RAW W DESIG D H T T WI O NE PAR ETE - N OL OBS MCTV65P100F1, MCTA65P100F1 65A, 1000V P-Type MOS Controlled Thyristor MCT Features Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC ANODE ANODE

MOS Controlled Thyristor

Abstract: MCTA75P60E1 MCTV75P60E1
Contextual Info: MCTV75P60E1, MCTA75P60E1 S E M I C O N D U C T O R 75A, 600V P-Type MOS Controlled Thyristor MCT April 1995 Features Package JEDEC STYLE TO-247 5-LEAD • 75A, -600V ANODE • VTM = -1.3V(Maximum) at I = 75A and +150oC • 2000A Surge Current Capability

MOS Controlled Thyristor

Abstract: MCT thyristor "MOS Controlled Thyristors" mos Turn-off Thyristor MCTG35P60F1 MCTS "mos controlled thyristor"
Contextual Info: MCTG35P60F1 S E M I C O N D U C T O R 35A, 600V P-Type MOS Controlled Thyristor MCT April 1995 Features Package • 35A, -600V JEDEC STYLE TO-247 o • VTM = -1.3V(Maximum) at I = 35A and +150 C A • 800A Surge Current Capability K • 800A/µs di/dt Capability

MCT thyristor

Abstract: MOS Controlled Thyristor MCT harris mct 600v MCTV35P60F1D diode ik 60
Contextual Info: MCTV35P60F1D S E M I C O N D U C T O R 35A, 600V P-Type MOS Controlled Thyristor MCT with Anti-Parallel Diode March 1995 Features Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC • 800A Surge Current Capability A • 800A/µs di/dt Capability

MITSUBISHI CM400

Abstract: MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h
Contextual Info: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING IGBT MODULES 4.0 Using IGBT Modules 4.1 Structure and Operation of IGBT Module Mitsubishi IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low

MCT thyristor

Abstract: mct 600v MCT harris MOS Controlled Thyristor MCTV35P60F1D MCTV35P6
Contextual Info: MCTV35P60F1D Semiconductor April 1999 AWN NS 35A, 600V ITHDR DESIG PART W E - NO NEW Thyristor MCT OLET S OBS S PROCE Features P-Type MOS Controlled with Anti-Parallel Diode Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC

MCT thyristor

Abstract: MCT harris 3A65P100F2 IK25 THYRISTOR 35A 300V diode ik 60
Contextual Info: MCTV35P60F1D S E M I C O N D U C T O R April 1998 S DESIGN R NEW O F 2 F D E 35A, 600V ND P10 COMME CT3D65 NOT RE 3A65P100F2, M Thyristor MCT T See MC Features P-Type MOS Controlled with Anti-Parallel Diode Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC

NTE5645

Abstract: 100A TRIAC Thyristor to220 10a triac relay 12v 100A triac 100a triac 10A triac 600V 10A TRIO
Contextual Info: NTE5645 TRIAC – 10A Isolated Tab Description: The NTE5645 is an 10 Amp TRIAC in a TO220 type package designed to be driven directly with IC and MOS devices and features proprietary, void–free glass passivated chips. This device is a bi–directional triode thyristor and may be switched from off–state to conduction for

Contextual Info: MCTV65P100F1, MCTA65P100F1 H A R R IS X Semiconductor * # $ * » * * * * April 1999 65 A, 1000V P-Type MOS Controlled Thyristor MCT cess p *0 < Features Package JEDEC STYLE TO-247 • 65A,-1000V ANODE • VTM < -1.4V at I = 65A and +150°C CATHODE (FLANGE)

measuring scr characteristics curve tracer

Abstract: BATTERY GROUND FAULT TRACER
Contextual Info: Microelectronics An Introduction to the ATTL758X Series of Line Card Access Switches Contents Page Introduction. 4-57 Basic Functionality Description .4-58 Switches . 4-58

NTE5629

Abstract: 400v 4a thyristor thyristor TRIAC 4A, 400V triac 40a triac 4a 400v 4AMP
Contextual Info: NTE5629 TRIAC – 400VRM, 4Amp Description: The NTE5629 TRIAC is a bi–directional triode thyristor in a TO202 type case. This device may be switched from off–state to conduction for either polarity of applied voltage with positive or negative gate–trigger current. The NTE5629 can be driven directly with IC and MOS devices and is designed

NTE5629

Contextual Info: NTE5629 TRIAC – 400VRM, 4Amp Description: The NTE5629 TRIAC is a bi–directional triode thyristor in a TO202 type case. This device may be switched from off–state to conduction for either polarity of applied voltage with positive or negative gate–trigger current. The NTE5629 can be driven directly with IC and MOS devices and is designed

triac 400v 80a

Abstract: 80a 400v thyristor NTE5638 10A 400v triac to220
Contextual Info: NTE5638 TRIAC – 8A Isolated Tab Description: The NTE5638 is an 8 Amp TRIAC in a TO220 type package designed to be driven directly with IC and MOS devices and features proprietary, void–free glass passivated chips. This device is a bi–directional triode thyristor and may be switched from off–state to conduction for

triac 400v 80a

Abstract: NTE5638 triac 600V 80A Thyristor to220 NTE5638-08 80a 400v thyristor
Contextual Info: NTE5638, NTE5638−06, NTE5638−08 TRIAC − 8A Isolated Tab Description: The NTE5638 is an 8 Amp TRIAC in a TO220 type package designed to be driven directly with IC and MOS devices and features proprietary, void−free glass passivated chips. This device is a bi−directional triode thyristor and may be switched from off−state to conduction for

NTE5457

Abstract: NTE5455 NTE5456 SCR NTE5457 NTE5452 NTE5458 scr 5 amp NTE5454 SCR TRIGGER PULSE circuit SCR Gate Drive
Contextual Info: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be

NTE5457

Abstract: NTE5456 NTE5452 NTE5453 NTE5454 NTE5455 NTE5458 SCR NTE5457
Contextual Info: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be

NTE5457

Abstract: NTE5455 NTE5452 NTE5456 NTE5453 NTE5454 NTE5458
Contextual Info: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate, TO202 Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse−blocking triode thyristors may be