MOSAID TECHNOLOGIES Search Results

MOSAID TECHNOLOGIES Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
CS-SATDRIVEX2-001		Amphenol Cables on Demand	Amphenol CS-SATDRIVEX2-001 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 1m	Datasheet
CS-SATDRIVEX2-002		Amphenol Cables on Demand	Amphenol CS-SATDRIVEX2-002 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 2m	Datasheet
CS-SATDRIVEX2-000.5		Amphenol Cables on Demand	Amphenol CS-SATDRIVEX2-000.5 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 0.5m	Datasheet
CS-SASDDP8282-000.5		Amphenol Cables on Demand	Amphenol CS-SASDDP8282-000.5 29 position SAS to SATA Drive Connector Dual Data Lanes Cable 0.5m	Datasheet
CS-SASDDP8282-001		Amphenol Cables on Demand	Amphenol CS-SASDDP8282-001 29 position SAS to SATA Drive Connector Dual Data Lanes Cable 1m	Datasheet

MOSAID TECHNOLOGIES Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MOSAID SYSTEMS Abstract: 256MDDRSDRAM MOSAID Technologies Text: R MOSAID Technologies Incorporated 256MDDRSDRAM Semiconductor Division 4 Bank 256M DDR SDRAM x4,x8,x16 Features • Double Data Rate Operation • Data Strobe sent/received with data • 3 Design Variations forDifferent I/O width 4Bank x 16M Word x 4 bit	Original	PDF	256MDDRSDRAM July/98 MOSAID SYSTEMS 256MDDRSDRAM MOSAID Technologies
64MPC100SDRAM Abstract: MOSAID Technologies Text: R MOSAID Technologies Incorporated 64MPC100SDRAM Semiconductor Division 4 Bank 64M SDRAM x4,x8,x16 Features • PC100 Compliant • 3 Design Variations for Different I/O width 4Bank x 4195024 x 4 bit 4 Bank x 2097512 x 8 bit 4 Bank x 1048576 x 16 bit •	Original	PDF	64MPC100SDRAM PC100 66MHz/100MHz April/98 64MPC100SDRAM MOSAID Technologies
MOSAID Technologies Abstract: 16MPC100SDRAM NC639 CKE13 Text: R MOSAID Technologies Incorporated 16MPC100SDRAM Semiconductor Division 2 Bank 16M SDRAM x4,x8,x16 Features • PC100 Compliant • 3 Design Variations for Different I/O width 2 Bank x 2097512 x 4 bit • 66MHz/100MHz • tAC=6ns for CAS Latency=2,3 •	Original	PDF	16MPC100SDRAM PC100 66MHz/100MHz April/98 MOSAID Technologies 16MPC100SDRAM NC639 CKE13
SLD4M18DR400 Abstract: sldram dcov MOSAID Technologies general semiconductor marking code GF Text: MOSAID Technologies Incorporated Semiconductor Division SLD4M18DR400 4 MEG x 18 SLDRAM FEATURES • • • • • • • • • • • • • • • • • Very High Speed – 400 MHz data rate 800 Mb/s peak I/O Bandwidth-provides very high bandwidth over narrow system memory bus	Original	PDF	SLD4M18DR400 SLD4M18DR400 sldram dcov MOSAID Technologies general semiconductor marking code GF
Ternary CAM Abstract: mosaid cam ternary content addressable memory dc9288 Content Addressable Memory Priority Encoder CAM Class-ICDC9288 "Content Addressable Memory" ternary Text: Class-IC DC9288 Class-IC DC9288 High-Performance Ternary CAM MOSAID Class-IC DC9288 is a fully parallel, 9Mbit per-bit ternary Content Addressable Memory CAM capable of storing 1, 0 and “don’t care” bits. Class-IC supports 128K entries of 72 bit words, 64K entries of 144 bit words or 32K entries of 288 bit words.	Original	PDF	DC9288 DC9288 432-pin Ternary CAM mosaid cam ternary content addressable memory Content Addressable Memory Priority Encoder CAM Class-ICDC9288 "Content Addressable Memory" ternary
tsmc cmos 0.13 um sram Abstract: TSMC 90nm sram ford ppap EMMI microscope TSMC 0.13um process specification PPAP MANUAL for automotive industry Kyocera mold compound semiconductors cross index ISO 9001 Sony foundry metals quality MANUALS Text: Integrated Silicon Solution Inc 2012 Q Quality y and Reliability Manual Contents Content Page Chapter 1 Quality Management 1.1 Quality Policy 1.2 Quality Organization 1.3 ISO 9001 Year 2008 Revision 1.4 Quality Systems 1.4.1 Process Map 1.4.2 Advanced Product Quality Planning	Original	PDF
PPAP level submission requirement table Abstract: PPAP MANUAL for automotive industry foundry metals quality MANUALS result of 200 prize bond INCOMING MATERIAL INSPECTION checklist, PCB TSMC 90nm sram SMD a006 ISO 9001 Sony foundry INCOMING MATERIAL INSPECTION procedure INCOMING RAW MATERIAL INSPECTION procedure Text: Contents Contents i Chapter 1 Quality Management 1.1 Quality Policy 1.2 Quality Organization 1.3 ISO 9001 Year 2000 Revision 1.4 Quality Systems 1.4.1 Process Map 1.4.2 Advanced Product Quality Planning 1.4.3 Quality Assurance in the Project Approval Stage	Original	PDF
tsmc cmos 0.13 um Abstract: "embedded dram" tsmc Text: SoC-RAMTM PL Memory Core 0.18µm 3Mbit embedded DRAM Macrocell Memory Type: Process: Geometry: Configuration: Structure: Synchronous DRAM 0.18µm Generic TSMC Logic Process Memory Density Area Height Width Cell-Efficiency Number of banks Number of pages in a bank	Original	PDF
EJTAG Tiny Tools CPLD Abstract: TSMC eDRAM ATML U 932 compaq presario ATML 932 Trident plus broadcom Siemens lg Ni1000 temperature sensor Photobit PB-100 irf 3502 SUN HOLD MD-5 Text: SEMICONDUCTOR TIMES FEBRUARY 1999 FEBRUARY 1999 / 1 FOCUSED ON EMERGING SEMICONDUCTOR COMPANIES Radar Scope LTX announced that Accelerix has purchased and taken delivery of a Delta STE, configurable to 512 digital channels, mixed signal instruments and the memory test option. Accelerix, a fabless	Original	PDF
tsmc cmos 0.13 um Abstract: "embedded dram" tsmc D1270 TSMC cmos 0.18um TSMC 0.18Um MOSAID Technologies Text: SoC-RAMTM PL Memory Core 0.18µm 8Mbit embedded DRAM Macrocell Memory Type: Process: Geometry: Configuration: Structure: Synchronous DRAM 0.18µm Generic TSMC Logic Process Memory Density Area Height Width Cell-Efficiency Number of banks Number of pages in a bank	Original	PDF
tristate buffer cmos Abstract: TSMC 0.18 um CMOS "embedded dram" tsmc tsmc cmos 0.13 um TSMC 0.18um tsmc cmos 0.13 MOSAID Technologies TSMC cmos 0.18um Text: SoC-RAMTM PL Memory Core 0.18µm 4.97Mbit embedded DRAM Macrocell Memory Type: Process: Geometry: Configuration: Structure: Synchronous DRAM 0.18µm Generic TSMC Logic Process Memory Density Area Height Width Cell-Efficiency Number of banks Number of pages in a bank	Original	PDF	97Mbit tristate buffer cmos TSMC 0.18 um CMOS "embedded dram" tsmc tsmc cmos 0.13 um TSMC 0.18um tsmc cmos 0.13 MOSAID Technologies TSMC cmos 0.18um
DIMM Socket, 184-pin Abstract: AN2582 P6860 DDR333 JESD79 MPC8560 TLA700 DDR DIMM pinout micron 184 Signal Path Designer Text: Freescale Semiconductor Application Note Document Number: AN2582 Rev. 6, 04/2007 Hardware and Layout Design Considerations for DDR Memory Interfaces by DSD Applications Freescale Semiconductor, Inc. Austin, TX Embedded systems that use double data rate memory DDR	Original	PDF	AN2582 DIMM Socket, 184-pin AN2582 P6860 DDR333 JESD79 MPC8560 TLA700 DDR DIMM pinout micron 184 Signal Path Designer
ddr pcb layout Abstract: P6860 sdram pcb layout ddr Micron Designline Vol 8 AN2582 ddr pin out dimm pcb layout FAN1655 FAN6555 LP2994 Text: Freescale Semiconductor, Inc. Application Note AN2582 Rev. 3, 5/2004 Hardware and Layout Design Considerations for DDR Memory Interfaces Freescale Semiconductor, Inc. NCSD Applications Embedded systems that utilize double data rate memory DDR can realize increased	Original	PDF	AN2582 ddr pcb layout P6860 sdram pcb layout ddr Micron Designline Vol 8 AN2582 ddr pin out dimm pcb layout FAN1655 FAN6555 LP2994
70241k Abstract: d5611 61c256 ic 9022 61c64 RELIABILITY REPORT ISSI vacuum tubes CMS 2015 S/TRANSISTOR J 5804 EQUIVALENT 28F010P Text: ISSI Integrated Silicon Solution, Inc. Quality and Reliability 1997-1998 An ISO 9001 Company ISSI ® Reliability Report 1997-1998 An ISO 9001 Company 1997 Integrated Silicon Solution, Inc. Integrated Silicon Solution, Inc. • 2231 Lawson Lane • Santa Clara, CA 95054	Original	PDF	R-118 70241k d5611 61c256 ic 9022 61c64 RELIABILITY REPORT ISSI vacuum tubes CMS 2015 S/TRANSISTOR J 5804 EQUIVALENT 28F010P