MOSFE 600V Search Results

Contextual Info: SM MK02 260IS S Advan nced N-Ch Po ower MOSFE ET SW WITCHIN NG REG GULATO OR APPLICATIO ON Fe eatures • Drain-Sourrce breakdo own voltage e: BVDSS=600 0V Min. • Low gate charge: c Qg=7nC (Typ.) • Low drain-source On resistance: RDS(on)=3.9Ω Ω (Typ.)

Contextual Info: SM MK01 160IS S Advan nced N-Ch Po ower MOSFE ET SW WITCHIN NG REG GULATO OR APPLICATIO ON Fe eatures • Drain-Sourrce breakdo own voltage e: BVDSS=600 0V Min. • Low gate charge: c Qg=3.9nC (Typ.) • Low drain-source On resistance: RDS(on)=11.5 5Ω (Max.)

Contextual Info: CÄTÄLQO_ Æ\\tTOTÎ nF„ rFS.,«. PRODUCT N-CHANNEL ENHANCEMENT MOS FET 600V, 15A, 0.50n SDF15N60 GAF FEATURES • RUGGED PACKAGE • HI-REL CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS • L O W IR LOSSES

Contextual Info: SSR/U1N60A Advanced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 mA Max @ VDS = 600V

GT30J124

Abstract: GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125
Contextual Info: 製品カタログ 2010-3 東芝半導体 製品カタログ ディスクリート IGBT h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 1 特長と構造 IGBTは Insulated Gate Bipolar Transistor の頭文字です。 MOSFETと同様に高入力インピーダンス特性を持ち電圧で駆動できます。

JRC 45600

Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES