MOSFET 1026 Search Results

MOSFET P-channel SOT-23

Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
Contextual Info: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

FIL-3C

Abstract: to-92 mosfet 13T13
Contextual Info: SÖE » SEP1TECH CORP • 013^13^ ODOBTìl OSO POWER MOSFET IN HERMETIC ISOLATED T0257AB PACKAGE SM8F13* SM8F33* SM8F23* SM8F43* These devices offer the latest ruggedized MOSFET transistor die mounted in isolated and hermetically sealed metal packages. The standard MOSFET characteristics of very low

PHILIPS MOSFET MARKING

Abstract: passive loopthrough n channel depletion MOSFET mosfet 5130 Q 817 mosfet K 2865 115102 4466 8 pin mosfet pin voltage marking code 10 sot23 BF1107
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF1107 Silicon N-channel single gate MOSFET Preliminary specification File under Discrete Semiconductors, SC07 1998 Apr 07 Philips Semiconductors Preliminary specification Silicon N-channel single gate MOSFET

mosfet K 2865

Abstract: BF1107 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF1107 N-channel single gate MOSFET Product specification Supersedes data of 1998 Apr 07 File under Discrete Semiconductors, SC07 1998 Jun 22 Philips Semiconductors Product specification N-channel single gate MOSFET

TRANSISTOR ww1

Abstract: mosfet handbook trimmer 2-18 pf ww1 45 transistor trafo toroidal AN98021 BLF548 KDI-PPT820-75-3 4814 mosfet chip philips catalog potentiometer 2322 350
Contextual Info: APPLICATION NOTE 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET AN98021 Philips Semiconductors 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET CONTENTS 1 INTRODUCTION 2 DESIGN CONSIDERATIONS 3 AMPLIFIER CONCEPT 4 INPUT CIRCUITRY

SS550

Abstract: 948S
Contextual Info: ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Surface Mount 2.5 V/2.7 V* 1.8 V QT Typ nC @ VGS = 4.5 V (5.0 V)/10 V* 0.052 0.072 0.12 12 −3.7 0.96 0.085 0.12 0.21 7.5 −3.2 0.20 0.35 −1.3 −1.0 RDS(on) Max (W) @ VGS = VDSS (V)

CMX-MS11

Abstract: BH17 CMX100D6 CMX200D3 CMX60D5 MS11 TS-35
Contextual Info: Series CMX - MS11 6 -10 Amp • 0-100 Vdc • DC Output DC output SPST-NO solid state relays use MOSFET output for high switching capabilities in a DIN Rail TS-35 mount air-cooled package. • DIN Rail Mount (TS 35) • MOSFET Output • Extra Low On State

Contextual Info: AUTOMOTIVE GRADE HEXFET Power MOSFET Features • Advanced Planar Technology  P-Channel MOSFET  Low On-Resistance  Dynamic dV/dT Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax

spw -079 transformer

Abstract: samsung galaxy s2 numeric digital 600 plus ups ckt diagram samsung galaxy s2 display Zener Diode ph 4148 ph 4148 zener diode CD4046 spice model DIODE SMD L4W lm2576 spice SN75492
Contextual Info: Micrel Semiconductor 1997 Databook 1 _ General Information 2 _ Computer Peripherals 3 _ Low-Dropout Linear Voltage Regulators 4 _ Switch-Mode Voltage Regulators 5 _ MOSFET Drivers 6 _

TL494 car charger schematic diagram

Abstract: samsung galaxy s2 controller for PWM fan tl494 1A current to 0-5v voltage converter using LM317 SMD LD33 capacitor huang 2200uF 35V uc3843 flyback supply opto-coupler SMD MOSFET DRIVE 4606 schematic lcd inverter samsung sine wave inverter tl494 circuit diagram
Contextual Info: Micrel Semiconductor 1997 Databook 1 _ General Information 2 _ Computer Peripherals 3 _ Low-Dropout Linear Voltage Regulators 4 _ Switch-Mode Voltage Regulators 5 _ MOSFET Drivers 6 _

051124

Abstract: 2SK3711 B105 MT100 SK3711 sanken
Contextual Info: 60V N -ch MOSFET 2SK3711 December 2005 •Package—TO3P ■Features • Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed ■Applications • Electric power steering • High current switching ■Equivalent circuit

n mosfet depletion pspice model parameters

Abstract: NMOS depletion pspice model Sharp amplifier SM30 pspice high frequency mosfet Sharp SM30 RFH75N05 datasheet RFH75N05 SM30 n mosfet pspice parameters P-Channel Depletion Mosfets
Contextual Info: Harris Semiconductor No. AN9210 Harris Power MOSFETs February 1992 A NEW PSPICE SUBCIRCUIT FOR THE POWER MOSFET FEATURING GLOBAL TEMPERATURE OPTIONS Author: William J. Hepp - Harris Semiconductor - Mountaintop PA C. Frank Wheatley Jr. - SM, IEEE - Consultant

2SK3711

Abstract: SK3711 051124 sanken power transistor B105 CF35 MT100 sanken MOSFET DSA0016517 N CH MOSFET
Contextual Info: 60V N -ch MOSFET 2SK3711 December 2005 •Package—TO3P ■Features • Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed ■Applications • Electric power steering • High current switching ■Equivalent circuit

sot 227b

Abstract: ixtn210p
Contextual Info: Advance Technical Information IXTN210P10T TrenchPTM Power MOSFET VDSS ID25 RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ -100V - 210A Ω 7.5mΩ 200ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information TrenchPTM Power MOSFET VDSS ID25 IXTN210P10T RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ -100V - 210A Ω 7.5mΩ 200ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings

Contextual Info: 60V N -ch MOSFET 2SK3711 December 2005 Package—TO3P Features • Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed Applications • Electric power steering • High current switching Equivalent circuit D 2

Contextual Info: HT0740 Advanced Information High Voltage Isolated MOSFET Driver Ordering Information Package Options 8-Pin Narrow Body SOIC 8-Pin Plastic DIP HT0740LG HT0740N4 Features General Description □ +400V input to output isolation □ No external voltage supply required

Contextual Info: HT0740 Advanced Information High Voltage Isolated MOSFET Driver Ordering Information Package Options 8-Pin Narrow Body SOIC 8-Pin Plastic DIP HT0740LG HT0740N4 Features General Description □ ±400V input to output isolation □ No external voltage supply required

Contextual Info: MOSFET FKP252 December. 2005 Package-TO220F Features • Low on-resistance • Low input capacitance • Avalanche energy capability guaranteed Applications • PDP driving • High speed switching Equivalent circuit D 2 G (1) S (3) Absolute maximum ratings

EKV550

Abstract: B105
Contextual Info: 50V N-ch MOSFET EKV550 January. 2006 •Features ■Package—TO-220 • Low on-resistance • Avalanche energy capability guaranteed • Built-in Gate protection diode against electrostatic discharge ESD ■Applications • DC-DC Converters • High speed switching

ekv550

Abstract: B105 CF35 sanken MOSFET
Contextual Info: 50V N-ch MOSFET EKV550 January. 2006 •Features ■Package—TO-220 • Low on-resistance • Avalanche energy capability guaranteed • Built-in Gate protection diode against electrostatic discharge ESD ■Applications • DC-DC Converters • High speed switching

FKP252

Abstract: sanken power transistor B105 CF35 FM20 TC1250
Contextual Info: MOSFET FKP252 December. 2005 •Package-TO220F ■Features • Low on-resistance • Low input capacitance • Avalanche energy capability guaranteed ■Applications • PDP driving • High speed switching ■Equivalent circuit D 2 G (1) S (3) Absolute maximum ratings

FKP252

Contextual Info: MOSFET FKP252 December. 2005 •Package-TO220F ■Features • Low on-resistance • Low input capacitance • Avalanche energy capability guaranteed ■Applications • PDP driving • High speed switching ■Equivalent circuit D 2 G (1) S (3) Absolute maximum ratings

STR X6759

Abstract: STR X6759 pin output STRX6768 str x6768 STR-X6757 strX6759 STR-X6759 STR-X6769 str x6757 STR X6759 APPLICATIONS
Contextual Info: Product Information STR-X6700 Series Off-Line Quasi-Resonant Switching Regulators Introduction The STR-X6700 series integrates a quasi-resonant control IC and a MOSFET with avalanche guarantee. In normal operation, the device provides high efficiency and low EMI