MOSFET 1053 Search Results

Contextual Info: T2 UNITRODE CORP 9347963 UNI T RO D E CORP DË^|ci347,:lb3 0010S30 7 " | ~ 92° POWER MOSFET TRANSISTORS 10530 D JTX JTXVi K 200 Volt, 1.5 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roscom and a high transconductance.

jfet cascode

Abstract: vertical JFET SiS 671 12 VOLTS CIRCUIT USING MOSFET an7260.2 mosfet equivalent DEPLETION MOSFET transistor jfet Harris Semiconductor jfet cascode mosfet switching
Contextual Info: Harris Semiconductor No. AN7260.2 Harris Power MOSFETs September 1993 Power MOSFET Switching Waveforms: A New Insight Author: Harold R. Ronan, Jr. and C. Frank Wheatley, Jr. The examination of power MOSFET voltage and current waveforms during switching transitions reveals that the

spw -079 transformer

Abstract: samsung galaxy s2 numeric digital 600 plus ups ckt diagram samsung galaxy s2 display Zener Diode ph 4148 ph 4148 zener diode CD4046 spice model DIODE SMD L4W lm2576 spice SN75492
Contextual Info: Micrel Semiconductor 1997 Databook 1 _ General Information 2 _ Computer Peripherals 3 _ Low-Dropout Linear Voltage Regulators 4 _ Switch-Mode Voltage Regulators 5 _ MOSFET Drivers 6 _

TL494 car charger schematic diagram

Abstract: samsung galaxy s2 controller for PWM fan tl494 1A current to 0-5v voltage converter using LM317 SMD LD33 capacitor huang 2200uF 35V uc3843 flyback supply opto-coupler SMD MOSFET DRIVE 4606 schematic lcd inverter samsung sine wave inverter tl494 circuit diagram
Contextual Info: Micrel Semiconductor 1997 Databook 1 _ General Information 2 _ Computer Peripherals 3 _ Low-Dropout Linear Voltage Regulators 4 _ Switch-Mode Voltage Regulators 5 _ MOSFET Drivers 6 _

LOGIC DUAL Regulator 5V 10V

Abstract: MAX15024 MAX15025
Contextual Info: 19-1053; Rev 1; 3/08 Single/Dual, 16ns, High Sink/Source Current Gate Drivers Features The MAX15024/MAX15025 single/dual, high-speed MOSFET gate drivers are capable of operating at frequencies up to 1MHz with large capacitive loads. The MAX15024 includes internal source-and-sink output

MAX15025

Abstract: MAX15024 max15025aatb
Contextual Info: 19-1053; Rev 2; 4/10 Single/Dual, 16ns, High Sink/Source Current Gate Drivers The MAX15024/MAX15025 single/dual, high-speed MOSFET gate drivers are capable of operating at frequencies up to 1MHz with large capacitive loads. The MAX15024 includes internal source-and-sink output

MAX15024

Abstract: MAX15025 T1033-1 2A Source, 4A Sink Peak Drive Current
Contextual Info: 19-1053; Rev 0; 10/07 Single/Dual, 16ns, High Sink/Source Current Gate Drivers Features The MAX15024/MAX15025 single/dual, high-speed MOSFET gate drivers are capable of operating at frequencies up to 1MHz with large capacitive loads. The MAX15024 includes internal source-and-sink output

MAX15024A

Abstract: AEC-Q100 MAX15024 MAX15025
Contextual Info: 19-1053; Rev 3; 4/11 Single/Dual, 16ns, High Sink/Source Current Gate Drivers The MAX15024/MAX15025 single/dual, high-speed MOSFET gate drivers are capable of operating at frequencies up to 1MHz with large capacitive loads. The MAX15024 includes internal source-and-sink output

LKI300

Abstract: ao 6786 2n6785 Unitrode 678-6 dioda s31
Contextual Info: TH W T T R O ^ r T O R 9347963 D in i c1347clki3 0 0 1 0 5 3 b F UNITRODE CORP 92D 10536 D POWER MOSFET TRANSISTORS jtx jtxv 400 Volt, 3.6 Ohm N-Channel T - 3 <?~o7 FEATURES • Fast Switching « Low Drive Current • Ease of Paralleling • No Second Breakdown

MOSFET TOSHIBA 2015

Contextual Info: TOSHIBA Discrete Devices RF Power MOSFET 2SK3476 Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds Vds = 4.8V, 4.8V, 6.0V, 6.0V, 7.2V, 7.2V, 8.4V, 8.4V, 9.6V 9.6V Vgs = 0.5V ~ 2.2V 0.05V Step

Contextual Info: TOSHIBA Discrete Devices RF Power MOSFET RFM 12U7X RFM12U7X Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds V, 6.0V, 4.8 Vds = 4.8V, 4.8V, 6.0V, 7.2V, 7.2V, 8.4V, 8.4V, 9.6V 9.6V Vgs = 0.5V ~

power mosfet 200A

Contextual Info: SSF17N60A Advanced Power MOSFET FEATURES b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA M ax. @ VOS= 600V ■

Contextual Info: NTY100N10 Preferred Device Power MOSFET 123 A, 100 V N-Channel Enhancement-Mode TO264 Package http://onsemi.com Features 123 A, 100 V 9 mW @ VGS = 10 V TYP • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Avalanche Energy Specified

FS50VS-3

Contextual Info: MITSUBISHI Neh POWER MOSFET FS50VS-3 HIGH-SPEED SWITCHING USE j FS50VS-3 OUTLINE DRAWING Dimensions in mm - 4-5 1 j 1.3 0.5 C i X Q -Ï Q C?; A ’ ö +i c\i T" ?) (3) •4) • 10V DRIVE • VDSS .150V

PAL 007 E MOSFET

Contextual Info: Semiconductor, Inc. TC1410 TC1410N 0.5A HIGH-SPEED MOSFET DRIVERS FEA TU RES G EN ER A L DESCRIPTION • The TC1410/141 ON are 0.5V CMOS buffer/drivers . They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when

NTGS3447PT1G

Abstract: s1053 NTGS3447
Contextual Info: NTGS3447P Power MOSFET -12 V, -5.3 A, Single P-Channel, TSOP-6 Features •ăLow RDS on in TSOP-6 Package •ă1.8 V Gate Rating •ăThis is a Pb-Free Device http://onsemi.com V(BR)DSS Applications •ăBattery Switch and Load Management Applications in Portable

Contextual Info: NTGS3447P Power MOSFET -12 V, -5.3 A, Single P-Channel, TSOP-6 Features •ăLow RDS on in TSOP-6 Package •ă1.8 V Gate Rating •ăThis is a Pb-Free Device http://onsemi.com V(BR)DSS Applications •ăBattery Switch and Load Management Applications in Portable

ltc3845

Abstract: MOSFET 800V 3A Rectifier t2d T2D DIODE 36V 3A diode P-Channel MOSFET 800v S 2530 A T2D DIODE 45 LTC3834-1 T2D 54 DIODE
Contextual Info: LTC3834-1 30 A IQ Synchronous Step-Down Controller U FEATURES DESCRIPTIO • The LTC 3834-1 is a high performance step-down switching regulator controller that drives an all N-channel synchronous power MOSFET stage. A constant-frequency current mode architecture allows a phase-lockable frequency of up to 650kHz.

Contextual Info: SÌ1032R/X Vishay Siliconix New Product N-Channel 20-V D-S MOSFET TrenchFE T PRODUCT SUMMARY V d s (V ) -2 0 M O SFETs 1 .5 -V R a te d Id ( n iA ) r D S (on) ( Q ) 5 @ V Gs = 4.5 V 200 7 @ VGs = 2.5 V 175 9 @ V QS = 1.8 V 150 10 d V qs = 1.5 V 50 ESD Protected

AP3039

Contextual Info: Application Note 1053 Design Consideration with AP3039A Prepared by Shanshan Yuan System Engineering Dept. protection to limit the output voltage. The OVP voltage can be set through external resistors. If the output voltage is higher than the OVP high threshold point, it

MOSFET 1053

Abstract: input 12v output 5v application note ic 1053 4SP560M JMK212BJ475MG MAX1917 2N7002* application ddr schematic
Contextual Info: Maxim > App Notes > POWER-SUPPLY CIRCUITS Keywords: DDR memory, high current, fast transient, MAX1917, quick PWM, step down controller, pulse width modulator Apr 12, 2002 APPLICATION NOTE 1053 VDDQ Supply for Server DDR Memory Using PWM Step-Down Controller

837 mosfet

Abstract: 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook
Contextual Info: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print. TYPE NUMBER TECHNOLOGY PACKAGE BUK100-50DL TOPFET T0220AB PAGE 38 BUK100-50GL TOPFET

T0-220AB

Abstract: PHILIPS MOSFET igbt mosfet switch BUK866 4001z
Contextual Info: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print, TYPE NUMBER TECHNOLOGY PACKAGE PAGE BUK100-50DL TOPFET T0220AB 38 BUK100-50GL TOPFET

OPT05

Abstract: 1000 watt mosfet power amplifier 1094/BBM2E3KKO 300 watt mosfet amplifier
Contextual Info: As appearing in Microwave Journal, Microwaves & RF and Microwave Product Digest 2008 Rev. 09/08 Empower RF Systems, Inc. ¬ Empower RF Systems, Inc. 316 West Florence Ave. Inglewood, CA 90301 Phone: +1 310 412-8100 Fax: +1 (310) 412-9232 Email: sales@empowerrf.com