MOSFET 10A 800V Search Results

Contextual Info: R8010ANX Nch 800V 10A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 0.56W ID 10A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is

10N80L

Abstract: 10n80 MOSFET 800V 10A TO-3P mosfet 10a 800v high power
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is

MOSFET 800V 10A TO-3P

Abstract: 10n80 mosfet 337
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is

mosfet 10a 800v

Abstract: MOSFET 800V 10A TO-3P 10N80 MOSFET 800V 10A 10N80L mosfet 10a 800v high power
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is

MOSFET 800V 10A TO-3P

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is

Contextual Info: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA IXFA IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P VDSS ID25 TO-220AB (IXFP) TO-3P (IXFQ) RDS(on) trr G G D S S G D (TAB) DS = 800V = 10A Ω ≤ 1.1Ω

Contextual Info: STU10NB80 N - CHANNEL 800V - 0.65ft - 10A - Max220 _PowerMESH MOSFET PRELIMINARY DATA TYPE S TU 10N B80 • . . . . V dss R dS oii Id 800 V < 0.8 Q. 10 A TYPICAL R D S (on) = 0.65 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

STU10NB80

Contextual Info: STU10NB80 N - CHANNEL 800V - 0.65Ω - 10A - Max220 PowerMESH MOSFET PRELIMINARY DATA TYPE STU10NB80 • ■ ■ ■ ■ V DSS R DS on ID 800 V < 0.8 Ω 10 A TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

U10NB80

Abstract: 55AV U10NB STU10NB80
Contextual Info: STU10NB80 N - CHANNEL 800V - 0.65Ω - 10A - Max220 PowerMESH MOSFET PRELIMINARY DATA TYPE ST U10NB80 • ■ ■ ■ ■ V DSS R DS on ID 800 V < 0.8 Ω 10 A TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

FS10SM16A

Abstract: FS10SM-16A
Contextual Info: MITSUBISHI Neh POWER MOSFET FS10SM-16A HIGH-SPEED SWITCHING USE FS10SM-16A •800V ■0.98Q 10A • V d s s . • TDS ON (MAX) • I D . APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per­

Contextual Info: SCT2450KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 450mW ID 10A PD 85W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode

Contextual Info: S2305 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 450mW ID 10A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode

Contextual Info: APT10090HLL 1000V 10A 0.900Ω POWER MOS 7 R MOSFET TO-258 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

D1F40

Abstract: S1ZB40 200v 10A mosfet diode 2f D1F10 DIODE D1F20 S1ZA40 diode rm 62 mosfet 600V 30A S1WB S 40 68
Contextual Info: h7>yX^ T ra n sisto r Vi KO 2 S A l 795 2SA1796 2SC4668 2SC4669 -5A -7A 7A 10A MOSFET R e ctifie r Diode Vi is s Id 0.5A 1.0A 1.0A 1.5A V rm Io 1.0A 1.1A 1.4 A Bridge Diode_ V rm 10 0.8A S c h o ttk y B a rrie r Diode ' Io V rm 1.1A 1.6A 3 .0 A

MOSFET 800V 10A

Abstract: ssf10n80a Tc-25-t
Contextual Info: SSF10N80A Advanced Power MOSFET FEATURES BVdss = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS= 800V

mosfet 10a 800v

Abstract: MOSFET 800V 10A SSH10N80A mosfet 10a 800v fs
Contextual Info: N-CHANNEL POWER MOSFET SSH10N80A FEATURES BVDSS = 800V • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA Max. @ VDS = 800V

SSH10N80A

Abstract: 10N80A 1017 mosfet
Contextual Info: SSH1 0 N8 0 A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology 800 V BVpss ~ ^DS on = Lower Input Capacitance Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 pA (M ax.) @ VDS= 800V

MOSFET 800V 10A

Abstract: mosfet 10a 800v mosfet 10a 800v high power F109 FQA10N80C
Contextual Info: QFET FQA10N80C 800V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

SMK1080

Contextual Info: SMK1080FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • Drain-Source breakdown voltage: BVDSS=800V  Low gate charge: Qg=58nC Typ.  Low drain-source On resistance: RDS(on)=1.1Ω (Max.)  RoHS compliant device  100% avalanche tested

FS10SM16A

Abstract: MOSFET 800V 10A FS10SM-16A mosfet 10a 800v
Contextual Info: MITSUBISHI Nch POWER MOSFET FS10SM-16A HIGH-SPEED SWITCHING USE FS10SM-16A OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 800V

MOSFET 800V 10A

Abstract: mosfet 10a 800v F109 FQA10N80C
Contextual Info: QFET FQA10N80C_F109 800V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: QFET FQA10N80C_F109 800V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to