MOSFET 10V 10A Search Results

MDD1653

Abstract: MDD*1653 mdd1653 MOSFET MDD1653rh MDD1653RP MagnaChip Semiconductor Ltd. MDD1653 MagnaChip Semiconductor Ltd. MDD1653 rg 1E52 MDD165 MDD1653R
Contextual Info: Single N-channel Trench MOSFET 30V, 50A, 8.5mΩ General Description Features VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state

mdd1653

Abstract: mdd1653 MOSFET MagnaChip Semiconductor Ltd. MDD1653 MDD*1653 50a 30v 8.5m MOSFET MDD1653R 30V 20A power p MOSFET MagnaChip Semiconductor Ltd. MDD1653 rg MDD1653T MAGNACHIP
Contextual Info: 30V N-channel Trench MOSFET : 30V, 50A, 8.5mΩ Features General Description VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching

C3018LD

Contextual Info: DMC3018LSD NEW PRODUCT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Complementary Pair MOSFET Low On-Resistance • N-Channel: 20mΩ @ 10V 32mΩ @ 4.5V • P-Channel: 45mΩ @ -10V 65mΩ @ -4.5V

MDF3752

Abstract: MDF3752TH mosfet low vgs
Contextual Info: P-Channel Trench MOSFET, -40V, -36.5A, 17mΩ Features General Description VDS = -40V ID = -36.5A @VGS = -10V RDS ON < 17mΩ @ VGS = -10V < 25mΩ @ VGS = -4.5V The MDF3752 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability.

MDS1652

Contextual Info: Single N-Channel Trench MOSFET 30V, 13A, 6.5mΩ Features General Description VDS = 30V ID = 13A @VGS = 10V RDS ON < 6.5mΩ @VGS = 10V < 8.5mΩ @VGS = 4.5V The MDS1652 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching

mdd3752

Abstract: MDD3752RH P-channel Trench MOSFET MDD*3752 MDD375 MagnaChip Semiconductor mosfet 441 Pchannel mosfet p-channel 10A 3ROA
Contextual Info: P-Channel Trench MOSFET, -40V, -43A, 17mΩ Features General Description VDS = -40V ID = -43A @VGS = -10V RDS ON < 17mΩ @ VGS = -10V < 25mΩ @ VGS = -4.5V The MDD3752 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability.

Contextual Info: DMC3018LSD N EW PRODU CT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Complementary Pair MOSFET Low On-Resistance • N-Channel: 20m @ 10V 32m @ 4.5V • P-Channel: 45m @ -10V 65m @ -4.5V Low Gate Threshold Voltage

IRF9910PbF

Contextual Info: PD - 95728A IRF9910PbF Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l Lead-Free HEXFET Power MOSFET VDSS 20V Q1 13.4m:@VGS = 10V Q2 9.3m:@VGS = 10V  6 '   * '   6 '   *

IRF9910PbF

Contextual Info: PD - 95728A IRF9910PbF Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l Lead-Free HEXFET Power MOSFET VDSS 20V Q1 13.4m:@VGS = 10V Q2 9.3m:@VGS = 10V  6 '   * '   6 '   *

IRF9910

Contextual Info: PD - 95869 IRF9910 HEXFET Power MOSFET Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box VDSS 20V Q1 13.4m:@VGS = 10V Q2 9.3m:@VGS = 10V  6 '   * '   6 '   * '  Benefits

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10UM-06 HIGH-SPEED SWITCHING USE FS10UM-06 • 10V DRIVE • VDSS . 60V • rDS ON (MAX) .78mQ • Id . 10A

T04 diode

Abstract: h1010
Contextual Info: MITSUBISHI Neh POWER MOSFET FS10UM-03 HIGH-SPEED SWITCHING USE FS10UM-03 • 10V DRIVE • VDSS . 30V • rDS ON (MAX) .95mi2 • Id .10A

Contextual Info: Complementary MOSFET ELM35603KA-S •General Description ■Features ELM35603KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. N-channel • • • • Vds=40V Vds=-40V Id=10A Id=-7A Rds(on) < 22mΩ(Vgs=10V) Rds(on) < 33mΩ(Vgs=-10V)

FDB045AN

Abstract: FDB045AN08A0 diode marking 53
Contextual Info: FDB045AN08A0_F085 N-Channel PowerTrench MOSFET 75V, 80A, 4.5m: Features Applications • rDS ON = 3.9m: (Typ.), VGS = 10V, ID = 80A • 42V Automotive Load Control • Qg(tot) = 92nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge

fdp047an08A0

Contextual Info: FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7mΩ Features Applications • rDS ON = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • 42V Automotive Load Control • Qg(tot) = 92nC (Typ.), VGS = 10V • Starter / Alternator Systems

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10SM-2 HIGH-SPEED SWITCHING USE • • • • • 10V DRIVE VDSS . -100V rDS ON (MAX) • . 0.23Î1 Id . 10A

DMG4511SK4

Abstract: DMG4511 TO-252-4L g4511 G4511S
Contextual Info: DMG4511SK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 35V 35mΩ @ VGS = 10V 13A -35V 45mΩ @ VGS = -10V -12A • • • • • • • • • Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

76419s

Contextual Info: HUF76419S3ST_F085 N-Channel Power Trench MOSFET 60V, 29A, 35mΩ D D Features „ Typ rDS on = 26.7mΩ at VGS = 10V, ID = 29A „ Typ Qg(tot) = 23.7nC at VGS = 10V, ID = 29A G „ UIS Capability „ RoHS Compliant G „ Qualified to AEC Q101 TO-263AB S S MOSFET Maximum Ratings TJ = 25°C unless otherwise noted

Contextual Info: Complementary MOSFET ELM35603KA-S •General Description ■Features ELM35603KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. N-channel • • • • P-channel Vds=40V Vds=-40V Id=10A Id=-7A Rds(on) < 22mΩ(Vgs=10V) Rds(on) < 33mΩ(Vgs=-10V)

apm4910

Abstract: APM4910K 27BSC STD-020C APM49
Contextual Info: APM4910K Dual N-Channel Enhancement Mode MOSFET Pin Description Features • Channel 1 30V/7A, RDS ON = 22mΩ (typ.) @ VGS = 10V RDS(ON) = 26mΩ (typ.) @ VGS = 4.5V • Channel 2 Top View of SOP − 8 30V/10A, RDS(ON) = 12mΩ (typ.) @ VGS =10V D1 (1) (2)

DMG4511SK4

Contextual Info: DMG4511SK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 35V 35mΩ @ VGS = 10V 13A -35V 45mΩ @ VGS = -10V -12A • • • • • • • • • Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

FDB045AN08A0

Contextual Info: tm FDB045AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.5mΩ Features Applications • rDS ON = 3.9mΩ (Typ.), VGS = 10V, ID = 80A • 42V Automotive Load Control • Qg(tot) = 92nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge

Contextual Info: FDB045AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.5mΩ Features Applications • rDS ON = 3.9mΩ (Typ.), VGS = 10V, ID = 80A • 42V Automotive Load Control • Qg(tot) = 92nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge

TO262AB

Contextual Info: FDP047AN08A0 / FDI047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7mΩ Features Applications • rDS ON = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • 42V Automotive Load Control • Qg(tot) = 92nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge