MOSFET 1200V 25A Search Results

32N12

Abstract: 32N120P
Contextual Info: Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET IXFL32N120P VDSS ID25 RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 24A Ω 340mΩ 300ns ISOPLUS i5-PakTM Symbol Test Conditions

APTM120DA30CT1G

Abstract: APT0406 APT0502 transistor 20a
Contextual Info: APTM120DA30CT1G VDSS = 1200V RDSon = 300mΩ typ @ Tj = 25°C ID = 31A @ Tc = 25°C Boost chopper MOSFET + SiC chopper diode Power Module Application 5 6 11 • • • CR1 AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features

Contextual Info: APTM120DA30CT1G VDSS = 1200V RDSon = 300m typ @ Tj = 25°C ID = 31A @ Tc = 25°C Boost chopper MOSFET + SiC chopper diode Power Module Application 5 6 11 •   CR1 AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features

Contextual Info: APTM120DA30CT1G VDSS = 1200V RDSon = 300mΩ typ @ Tj = 25°C ID = 31A @ Tc = 25°C Boost chopper MOSFET + SiC chopper diode Power Module Application 5 6 11 • • • CR1 AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features

Contextual Info: APTM120A20DG Phase leg with Series diodes MOSFET Power Module VBUS G1 S1 G2 OUT 0/VBUS S2 VDSS = 1200V RDSon = 200m typ @ Tj = 25°C ID = 50A @ Tc = 25°C Application • Zero Current Switching resonant mode Features  Power MOS 7 MOSFETs - Low RDSon

APTM120U20D

Abstract: APTM120A20D
Contextual Info: APTM120A20D Phase leg with Series diodes MOSFET Power Module VDSS = 1200V RDSon = 200mΩ max @ Tj = 25°C ID = 50A @ Tc = 25°C Application • Zero Current Switching resonant mode Features • • • • G1 VBUS 0/VBUS OUT Power MOS 7 MOSFETs - Low RDSon

Contextual Info: APTM120A20SG Phase leg Series & parallel diodes MOSFET Power Module VBUS Q1 G1 OUT S1 Q2 G2 0/VBUS S2 VDSS = 1200V RDSon = 200mΩ typ @ Tj = 25°C ID = 50A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies

Contextual Info: APT34M120J 1200V, 35A, 0.29Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT34M120J

Abstract: MIC4452
Contextual Info: APT34M120J 1200V, 34A, 0.30Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT34M120J

Contextual Info: APT34M120J 1200V, 35A, 0.29Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT34M120J

Abstract: MIC4452
Contextual Info: APT34M120J 1200V, 35A, 0.29Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Contextual Info: APT34M120J 1200V, 34A, 0.30Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Contextual Info: APTM120A20SG Phase leg Series & parallel diodes MOSFET Power Module VBUS Q1 G1 OUT S1 Q2 G2 0/VBUS S2 G1 VBUS 0/VBUS OUT S1 S2 G2 VDSS = 1200V RDSon = 200mΩ typ @ Tj = 25°C ID = 50A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies

APT0406

Abstract: APT0502 APTM120DA30T1G mosfet 1200V 25A
Contextual Info: APTM120DA30T1G VDSS = 1200V RDSon = 300mΩ typ @ Tj = 25°C ID = 31A @ Tc = 25°C Boost chopper MOSFET Power Module 5 6 11 Application • • • CR1 3 4 Q2 NTC Features • 9 10 1 2 AC and DC motor control Switched Mode Power Supplies Power Factor Correction

Contextual Info: APTM120DA30T1G VDSS = 1200V RDSon = 300mΩ typ @ Tj = 25°C ID = 31A @ Tc = 25°C Boost chopper MOSFET Power Module 5 6 11 Application • • • CR1 3 4 Q2 NTC Features • 9 10 1 2 AC and DC motor control Switched Mode Power Supplies Power Factor Correction

Contextual Info: APT32F120J 1200V, 33A, 0.32Ω Max, trr ≤430ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT32F120J

Abstract: mosfet h bridge 25a MIC4452
Contextual Info: APT32F120J 1200V, 32A, 0.35Ω Max, trr ≤430ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

mosfet h bridge 25a

Abstract: APT32F120J MIC4452
Contextual Info: APT32F120J 1200V, 33A, 0.32Ω Max, trr ≤430ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

Contextual Info: APT32F120J 1200V, 32A, 0.35Ω Max, trr ≤430ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

Contextual Info: APT32F120J 1200V, 33A, 0.32Ω Max, trr ≤430ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

buck 800v igbt

Abstract: APTM120DSK57T3 D17A
Contextual Info: APTM120DSK57T3 Dual Buck chopper MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies 13 14 Q1 Q2 11 18 22 7 19 10 23 CR1 29 8 30 CR2 31 15 32 16 R1 28 27 26 25 23 22 20 19 18 29 16 30 15 31 14 32 13 2 3 4 7 8 VDSS = 1200V

Contextual Info: r z 7 SCS-THOMSON LI OT iOûS 7#® 5 STTA5012T(V 112 ^ TURBOSWITCH “A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS If(av ) 25A V rrm 1200V trr (typ) 65ns V f (max) 1.85 V STTA5012T(V)1 STTA5012T(V)2 FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE

mosfet 1200V 25A

Contextual Info: r z T SGS-THOMSON ^ 7 # K TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f av 25A V rrm 1200V trr (typ) 60ns Vf PRELIMINARY DATA 1.9V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. . VERY LOW OVERALL POWER LOSSES IN

morocco p3

Abstract: mosfet 1200V 40A IGBT Transistor 1200V, 25A mosfet 1200V 25A ir igbt 1200V 40A STTA2512P TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE IGBT Transistor 2.5a transistor marking p3 transistor P1 P 12
Contextual Info: STTA2512P  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS 25A VRRM 1200V trr typ 60ns VF (max) 1.9V K A IF(AV) FEATURES AND BENEFITS A ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN