MOSFET 1200V 30A SNUBBER CIRCUIT Search Results

r18120g2

Abstract: R18120S3 R18120P R18120P2 igbt 6.5 kv snubber R18120G ISL9R18120P2 ISL9R18120S3ST
Contextual Info: ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S 18A, 1200V Stealth Diode General Description Features The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family

Contextual Info: ISL9R18120G2, ISL9R18120P2, ISL9R18120S3S 18A, 1200V, STEALTH Diode Features • Stealth Recovery trr = 300 ns @ IF = 18 A • Max Forward Voltage, VF = 3.3 V (@ TC = 25°C) • 1200 V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant

Contextual Info: ISL9R30120G2 30A, 1200V Stealth Diode General Description Features The ISL9R30120G2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRM(REC and exceptionally soft recovery under typical

MOSFET 1200v 30a snubber circuit

Abstract: MOSFET 1200v 30a r30120g2 AN-7528 R30120G ISL9R30120G2 smart ups 750 circuit
Contextual Info: ISL9R30120G2 30A, 1200V Stealth Diode General Description Features The ISL9R30120G2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRM(REC and exceptionally soft recovery under typical

K30120G3

Abstract: ISL9K30120G3 smart ups 750 circuit MOSFET 1200v 30a K30120G AN-7528 IGBT 500A 1200V mosfet 1200V 30a smps
Contextual Info: ISL9K30120G3 30A, 1200V Stealth Dual Diode General Description Features The ISL9K30120G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current

K18120G3

Abstract: ISL9K18120G3 AN-7528 TA49414 K1812
Contextual Info: ISL9K18120G3 18A, 1200V Stealth Dual Diode General Description Features The ISL9K18120G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current

r18120g2

Abstract: R18120P2 AN-7528 TA49414 MOSFET 1200v 30a ISL9R18120G2 ISL9R18120P2 ISL9R18120S3S R18120S3
Contextual Info: ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S 18A, 1200V Stealth Diode General Description Features The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family

K18120G3

Contextual Info: ISL9K18120G3 18A, 1200V Stealth Dual Diode General Description Features The ISL9K18120G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current

MOSFET 1200v 30a snubber circuit

Abstract: R18120P2 AN-7528 ISL9R18120G2 ISL9R18120P2 ISL9R18120S3S r18120g2 igbt 6.5 kv snubber
Contextual Info: ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S 18A, 1200V Stealth Diode General Description Features The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family

Contextual Info: ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S 18A, 1200V Stealth Diode General Description Features The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family

Contextual Info: fiZ T SGS-THOMSON ^7# MDe^OILIigTriOKineS STTB3006P I TURBOSWITCH ”B". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f(av) 30A V rrm 600V trr (typ) 60ns Vf PRELIMINARY DATA 1.3V (max) FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA­

Quasi-resonant Converter for induction cooker

Abstract: 1kw single phase IGBT inverter IC Module inverter Controller PWM 1kw igbt induction cooker induction heating cooker motor driver full bridge mosfet 10A 100V induction cooker universal AC Motor soft start induction heating 230V pwm inverter single phase UPS
Contextual Info: 1 Smart Power Module Series 10A to 20A Smart Power Module SPM products in compact Dual In-line Packages (DIP) offer • Adjustable current protection level · Inverter power rating of 0.4kW, 0.75kW, 1kW and 1.4kW/100V AC to 253V AC

MOSFET 1200v 30a

Abstract: DIODE w2x MOSFET 1200v 30a snubber circuit STTB6006TV2
Contextual Info: f Z J SGS-THOMSON ^7# [ « [ im iO T ® « ! STTB6006T V 1/2 TURBOSWITCH “B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f (a v ) 2*30A V rrm 600V trr (typ) 60ns V f (max) 23 SB K2 A2 K1 A1 STTB6006T(V)1 1.3V A2 K1 K2 A1 STTB6006T(V)2

transistor D 5032

Abstract: 650 DIODE IRGPS60B120KD
Contextual Info: PD- 94239 IRGPS60B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH Motor Control Co-Pack IGBT ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.

diode sg 42

Contextual Info: £ ÿ j SGS-THOMSON DœSELIOTfô ! STTB3006P I TURBOSWITCH ™ ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f (a v ) 30A V rrm 600V (typ) 60ns (max) 1.3V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA­

STTB3006P

Abstract: 3006P MOSFET 1200v 30a STTB3006PI MOSFET 1200v 30a snubber circuit
Contextual Info: STTB3006P I  TURBOSWITCH  ”B”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCTS CHARACTERISTICS 30A VRRM 600V trr (typ) 60ns VF (max) 1.3V K A IF(AV) FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: Snubbing or clamping, demagnetization

Contextual Info: r Z J SGS-THOMSON ^ 7 # S f f lD e ^ O I L ie ir iO f f le i S T T B 6 0 0 6 T V 1 /2 TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 2*30A Vrrm 600V * t (typ) 60ns Vf (max) 1.3V PRELIMINARY DATA 53 BE K1 A1

STTB6006TV1

Abstract: STTB6006TV2 MOSFET 1200v 30a snubber circuit MOSFET 1200v 30a TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE smps high power
Contextual Info: STTB6006TV1/2  TURBOSWITCH  ”B”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCTS CHARACTERISTICS IF AV 2*30A VRRM 600V trr (typ) 60ns VF (max) K2 A2 K1 A1 STTB6006TV1 1.3V A2 K1 K2 A1 STTB6006TV2 FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: Snubbing or clamping, demagnetization

Contextual Info: rz 7 Ä 7# SGS-THOMSON M ûœ ËŒ O T «® S T T B 6 0 0 6 T V 1 /2 TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 2*30A V rrm 600V trr PRELIMINARY DATA 60ns (typ) 1.3V Vf (max) FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA­

Contextual Info: £ y j SGS-THOMSON ne^OHLieiTIMeQilBCi S T T B 6 0 0 6 T V 1 /2 TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 2*30A V rrm 600V (typ) 60ns (max) 1.3V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS • SPEC IFIC TO THE FOLLOWING OPERA­

Solid State Relays

Abstract: gunther relay. 3700 WG A8 6D 03 Z TRIAC 20A 600V WG A5 6D 25
Contextual Info: HEATSINK DIMENSIONS WG - K3/160 Screw thread M4 x 6mm 0.16x0.24 / 10 pieces WG - K1/100 B/D Snap-on-rail 35 (1.38) 100 (3.94) B B A A B Snap-on-rail 35 (1.38) B 160 (6.3) A 20 (0.79) D C 3.0 (0.12) Snap-on-rail mounting Snap-on-rail mounting 1.5 (0.06) Counterbore for grounding

STTB3006P

Abstract: mosfet 1200V 30a smps
Contextual Info: T S G S -T H O M S O N ^ 7 # M C ^ < m iO T s M K fZ S T T B 3 0 0 6 P(I TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f (a v ) 30A V rrm 600V (typ) 60ns (max) 1.3V tr r Vf PRELIMINARY DATA FEATURES AND BENEFITS

95A sensor hall

Abstract: celduc d31c2110 d31c2110 sensor hall 95A HALL 95A D41A3100L 95A magnetic sensor IGBT ac switch in SSR swt kw 11 7 1 16a 250vac ac SYNCHRONOUS MOTOR WIRING
Contextual Info: Selection Guide REED RELAYS AND SWITCHES MAGNETIC SENSORS SOLID STATE RELAYS IV E ED We are pleased to present the third version of our short form catalogue. The last 3 years have seen a dramatic growth in customers in a diverse range of industries, allowing us to demonstrate high quality, innovative design techniques incorporated in many of the new products shown in this catalogue.

IPM module

Abstract: pm10csj060 igbt short circuit protection schematic diagram pwm INVERTER 3 phase 600V IGBT Current Sensing Channel Driver PM150CVA050 3 phase 300A inverter schematic diagram PM25RSK120 PM400DVA060 MOSFET 1200v 30a snubber circuit
Contextual Info: New Intelligent Power Modules IPMs for Motor Drive Applications Eric R. Motto Powerex Incorporated, Hillis Street, Youngwood, PA 15697 USA Abstract - Two new families of intelligent power devices have been developed to address industry requirements for high reliability, low cost, motor controls with increased performance and smaller size. These new devices are the