MOSFET 1361 Search Results

AOTF12N50

Abstract: AOT12N50 AOTF10N60
Contextual Info: AOT12N50 / AOTF12N50 500V, 12A N-Channel MOSFET General Description Features The AOT12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: ◆N-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.1Ω MAX. ◆Ultra High-Speed Switching ◆Gate Protect Diode Built-in ◆SOT-23 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP151A13A0MR is an N-channel Power MOSFET with low

AOTF12N50

Abstract: AOT12N50
Contextual Info: AOT12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

AOTF12N50L

Abstract: AOB12N50L AOT12N50L
Contextual Info: AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC

Contextual Info: AOW12N50/AOWF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOW12N50 & AOWF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing

Contextual Info: AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

aotf12n50

Contextual Info: AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC

AOT13N50

Abstract: AOTF13N50
Contextual Info: AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC

500V12A

Contextual Info: AOW12N50/AOWF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOW12N50 & AOWF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing

Contextual Info: AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC

AOTF12N50L

Abstract: AOTF12N50 AOT12N50
Contextual Info: AOT12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Contextual Info: AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

RA60H1317M1A

Abstract: RA60H1317M1 RF MOSFET MODULE RF MODULE RA60H1317M1A rf transistor mar 8 MITSUBISHI marking example 174MHZ marking code transistor ND F1361 MAR 601 transistor
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to

RA60H1317M1

Abstract: RA60H1317M1A RF MODULE CIRCUIT DIAGRAM for channel 4 RF MOSFET MODULE RD 15 mitsubishi 136-174MHz DD1002 mosfet marking code gg RF MODULE RA60H1317M1A MITSUBISHI RF POWER MODULE
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to

136-174MHz

Abstract: ra60h1317m1a-101 RA60H1317M1A RA60H1317M1 174MHZ
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO TENTATIVE DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to

circuit diagram of very long range remote control

Abstract: IC 567 8pin hk relay 12v 5 pin MD-5031 2314 mosfet amp 4546 marking 221 sop8 MD5031T
Contextual Info: CAT.No.TU 174 mMD5031T. DC-DC Converter Power IC Control IC and Power MOSFET incorporated in SOP8 Package MD5031T is a non-isolated, step down DC to DC converter power IC incorporating a main switch MOSFET and control circuit on a single chip. Using surface mount SOP8

4514v

Abstract: circuit diagram of very long range remote control amp 4546 marking 221 sop8 ic 4514 applications A 4514V A 4514v 8 pin
Contextual Info: CAT.No.TU 173-1 UMD5021T DC-DC Converter Power IC Control IC and Power MOSFET incorporated in SOP8 Package MD5021T is a non-isolated, step down DC to DC converter power IC incorporating a main switch MOSFET and control circuit on a single chip. Using surface mount SOP8

spw -079 transformer

Abstract: samsung galaxy s2 numeric digital 600 plus ups ckt diagram samsung galaxy s2 display Zener Diode ph 4148 ph 4148 zener diode CD4046 spice model DIODE SMD L4W lm2576 spice SN75492
Contextual Info: Micrel Semiconductor 1997 Databook 1 _ General Information 2 _ Computer Peripherals 3 _ Low-Dropout Linear Voltage Regulators 4 _ Switch-Mode Voltage Regulators 5 _ MOSFET Drivers 6 _

TL494 car charger schematic diagram

Abstract: samsung galaxy s2 controller for PWM fan tl494 1A current to 0-5v voltage converter using LM317 SMD LD33 capacitor huang 2200uF 35V uc3843 flyback supply opto-coupler SMD MOSFET DRIVE 4606 schematic lcd inverter samsung sine wave inverter tl494 circuit diagram
Contextual Info: Micrel Semiconductor 1997 Databook 1 _ General Information 2 _ Computer Peripherals 3 _ Low-Dropout Linear Voltage Regulators 4 _ Switch-Mode Voltage Regulators 5 _ MOSFET Drivers 6 _

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136

A9M15

Abstract: AFT09MS015N TRANSISTOR Z10 D55295 815 transistor
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 1, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136