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    MOSFET 150 N IRF Search Results

    MOSFET 150 N IRF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 150 N IRF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf 1740

    Abstract: EIA-541 P Channel Power MOSFET IRF
    Text: PD- 96128A IRF7478QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free Description These HEXFET Power MOSFET's are a 150°C


    Original     		PDF 6128A IRF7478QPbF irf 1740 EIA-541 P Channel Power MOSFET IRF

    IRF P CHANNEL MOSFET

    Abstract: MOSFET 150 N IRF IRF7343QPBF B9 mosfet datasheet
    Text: PD - 96110 IRF7343QPBF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free HEXFET Power MOSFET S1 N-CHANNEL MOSFET


    Original     		PDF IRF7343QPBF EIA-481 EIA-541. IRF P CHANNEL MOSFET MOSFET 150 N IRF IRF7343QPBF B9 mosfet datasheet

    IRF P CHANNEL MOSFET

    Abstract: MOSFET 150 N IRF N-P Channel mosfet
    Text: PD - 96106 IRF7307QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 N-CHANNEL MOSFET


    Original     		PDF IRF7307QPbF EIA-481 EIA-541. IRF P CHANNEL MOSFET MOSFET 150 N IRF N-P Channel mosfet

    irf 536

    Abstract: IRF p 536 MOSFET transistor irf 649
    Text: PD - 96102 IRF7105QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 N-CHANNEL MOSFET


    Original     		PDF IRF7105QPbF EIA-481 EIA-541. irf 536 IRF p 536 MOSFET transistor irf 649

    Untitled

    Abstract: No abstract text available
    Text: PD - 96111 IRF7379QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 N-CHANNEL MOSFET


    Original     		PDF IRF7379QPbF EIA-481 EIA-541.

    Untitled

    Abstract: No abstract text available
    Text: PD - 96115 IRF9952QPbF l l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 N-CHANNEL MOSFET


    Original     		PDF IRF9952QPbF EIA-481 EIA-541.

    Untitled

    Abstract: No abstract text available
    Text: PD - 96102B END OF LIFE IRF7105QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 N-CHANNEL MOSFET 1 8 G1


    Original     		PDF 96102B IRF7105QPbF JESD47Fâ J-STD-020Dâ

    Untitled

    Abstract: No abstract text available
    Text: PD- 96128A IRF7478QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free VDSS These HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching


    Original     		PDF 6128A IRF7478QPbF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96102A IRF7105QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 N-CHANNEL MOSFET 1 8 G1 2 7 D1 S2 3


    Original     		PDF 6102A IRF7105QPbF EIA-481 EIA-541.

    IRF7343QPBF

    Abstract: No abstract text available
    Text: PD - 96110A IRF7343QPBF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free HEXFET Power MOSFET S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2


    Original     		PDF 6110A IRF7343QPBF aval61 EIA-481 EIA-541. IRF7343QPBF

    F7101

    Abstract: IRF7101
    Text: PD - 96106A IRF7307QPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free HEXFET Power MOSFET S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2


    Original     		PDF 6106A IRF7307QPbF ava61 EIA-481 EIA-541. F7101 IRF7101

    F7101

    Abstract: IRF7101
    Text: PD - 96102A IRF7105QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 N-CHANNEL MOSFET 1 8 G1 2 7 D1 S2 3


    Original     		PDF 6102A IRF7105QPbF EIA-481 EIA-541. F7101 IRF7101

    Untitled

    Abstract: No abstract text available
    Text: PD - 96110A IRF7343QPBF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2


    Original     		PDF 6110A IRF7343QPBF EIA-481 EIA-541.

    EIA-541

    Abstract: No abstract text available
    Text: PD - 96115A IRF9952QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 N-CHANNEL MOSFET 1 8 G1 2 7 D1 S2 3


    Original     		PDF 6115A IRF9952QPbF avalan61 EIA-481 EIA-541. EIA-541

    Untitled

    Abstract: No abstract text available
    Text: PD - 96113 IRF7452QPbF SMPS MOSFET HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free Description


    Original     		PDF IRF7452QPbF EIA-541.

    Untitled

    Abstract: No abstract text available
    Text: PD - 97034 IRF4905SPbF IRF4905LPbF HEXFET Power MOSFET Features n n n n n n n Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S


    Original     		PDF IRF4905SPbF IRF4905LPbF IRF4905S O-262 AN-994.

    Untitled

    Abstract: No abstract text available
    Text: PD - 96113A IRF7452QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free Description These HEXFET® Power MOSFET's in SO-8


    Original     		PDF 6113A IRF7452QPbF EIA-481 EIA-541.

    EIA-541

    Abstract: F7101 IRF7101
    Text: PD - 96113A IRF7452QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free Description These HEXFET® Power MOSFET's in SO-8


    Original     		PDF 6113A IRF7452QPbF EIA-481 EIA-541. EIA-541 F7101 IRF7101

    PN channel MOSFET 10A

    Abstract: No abstract text available
    Text: PD - 96125 IRF7313QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N- Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 1 8 D1 G1 2


    Original     		PDF IRF7313QPbF EIA-481 EIA-541. PN channel MOSFET 10A

    Untitled

    Abstract: No abstract text available
    Text: PD - 96132 IRF7380QPbF l l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free VDSS RDS on max 73m:@VGS = 10V


    Original     		PDF IRF7380QPbF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96103 IRF7303QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 1 8 D1 G1 2


    Original     		PDF IRF7303QPbF EIA-481 EIA-541.

    HEXFET SO-8

    Abstract: PN channel MOSFET 10A
    Text: PD - 96132A IRF7380QPbF l l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free VDSS RDS on max 73m:@VGS = 10V


    Original     		PDF 6132A IRF7380QPbF HEXFET SO-8 PN channel MOSFET 10A

    Untitled

    Abstract: No abstract text available
    Text: PD- 96128B END OF LIFE IRF7478QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free VDSS RDS on max (mW) ID 26@VGS = 10V


    Original     		PDF 96128B IRF7478QPbF

    IRFP450 Power Mosfet

    Abstract: No abstract text available
    Text: Standard Power MOSFET IRFP450 VDSS = 500 V ^D co nt — 14 A ^ D S (o n ) = 0 -4 0 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VOSS T j = 25°C to 150°C 500 V Voc« V«, T j = 25°C to 150°C; Ros = 1 M£2 500 V C ontinuous ±20


    OCR Scan     		PDF IRFP450 O-247 C2-35 IRFP450 Power Mosfet